Ion Milling -- Phi
The ion gun
The Kratos XSAM has been recently upgraded with a Phi Model 04-303 Sputtering Ion Gun, purchased from RBD Enterprises with a Phi Model 11-065 Ion Gun Controller. This ion gun is reported to be able to etch samples at very fast and very slow rates. Currently only the upper range of ethcing has been determined, and that is 153 angstroms/minute with a 1000 angstrom SiO2 on Si Wafer. The lower limits will be determined when the appropriate depth standards are obtained.
RBD Enterprises has reported Typical Operating Parameters for the 04-303 Ion Gun
| Beam Current | Spot Size |
| 150 nA | 200 uM |
| 8 uA | 1000uM |