Short Course Description: Treatment of the basic principles of semiconductor devices. Applications of transport phenomena in semiconductors to explain the terminal characteristics of a variety of modern electronic devices such as bipolar junction transistors, MOS structures, and field effect transistors.
Dr. Wolfgang Porod
Room: 203 Cushing Hall
Phone: 631-6376
E-mail: Porod@ND.edu
Office Hours: Tu Th 1:00 - 2:00 pm
M W F 10:40 - 11:30 am
DeBartolo, Room 217
Solid State Electronic Devices,
by Streetman & Banerjee (Prentice Hall, 2004).
Semiconductor Device Fundamentals,
by Pierret (Addison Wesley, 1996).
Semiconductor Devices,
by Kano (Prentice Hall, 1998).
Crystal Fire,
by Michael Riordan and Lillian Hoddeson (Norton, 1997).
CLASS 1 (January 12) FIRST DAY OF CLASS
Introduction and Overview.
CLASS 2 (January 14) [Daily Prep]
Review of semiconductor properties.
CLASS 3 (January 17) [Daily Prep]
Review of semiconductor p-n junctions.
CLASS 4 (January 20) [Daily Prep:
Follow Example 5-2 and create MATLAB plots for the charge density, electric
field, and p-n junction band diagram (modify the code for Pierret's Exercise
5.4 below).]
Review of current flow across a
p-n junction.
Diode I-V characteristics.
HomeWork #1 (due Jan 26): Chapter 5, Nos. 16 (MATLAB plot), 21, 23, 35.
CLASS 5 (January 21) [Daily Prep]
Diode I-V characteristics secondary effects.
Deviations from the simple theory.
CLASS 6 (January 24) [Daily Prep]
Review of transient behavior of a p-n junction.
Switching diode.
CLASS 7 (January 26) [Daily Prep]
Review of capacitance of a p-n junction.
Varactor diode.
HomeWork #2 (due Feb 2): Chapter 5, Nos. 26, 27, 28, 32, 41.
CLASS 8 (January 28) [Daily Prep]
Metal-semiconductor junctions.
Semiconductor heterojunctions.
CLASS 9 (January 31) [Daily Prep]
Bipolar Junction Transistor (BJT) fundamentals
CLASS 10 (February 2) [Daily Prep]
Minority carrier diffusion in the base of a BJT.
HomeWork #3 (due Feb 9): Write a MATLAB code which draws the band diagrams for a BJT both in equilibrium and under applied bias (hint: use the code of Pierret exercise 10.2 as a starting point); this problem counts for 3. Chapter 7, Nos. 2, 3
CLASS 11 (February 4) [Daily Prep]
Terminal currents of a BJT.
CLASS 12 (February 7) [Daily Prep]
Coupled-diode model for a BJT.
Ebers-Moll equations.
CLASS 13 (February 9) [Daily Prep]
Charge-control analysis for a BJT.
HomeWork #4 (due Feb
18): Using the Ebers-Moll equations, create MATLAB plots of the BJT device
characteristics for (1 point each):
* common-base biasing;
* common-emitter biasing.
Chapter 7, Nos. 6, 7, 14.
CLASS 14 (February 10) [No Daily Prep]
BJT biasing modes.
CLASS 15 (February 11) [Daily
Prep]
BJT switching cycle.
CLASS 16 (February 14) [Daily
Prep]
BJT small-signal ac analysis and hybrid-pi model.
High-frequency effects.
CLASS 17 (February 18) [Daily
Prep]
BJT secondary effects.
HomeWork #5 (due Feb
23): Using the code based on the Ebers-Moll equations developed for last week’s
assignment, create MATLAB plots of the BJT common base and common emitter device
characteristics including these secondary effects (1 point each):
* base-width modulation;
* carrier multiplication due to impact ionization.
Chapter 7, Nos. 19, 22, 26.
CLASS 18 (February 21) [Daily
Prep]
Heterojunction Bipolar Transistor (HBT).
CLASS 19 (February 23) [Daily
Prep]
Field-Effect Transistor (FET) fundamentals.
HomeWork #6 (due Mar 2): Chapter 6, Nos. (1 and 2), 3, 4, 5, 7.
CLASS 20 (February 25) [Daily
Prep]
Junction Field-Effect Transistor (JFET).
CLASS 21 (February 28) [Daily
Prep]
Metal-Semiconductor Field-Effect Transistor (MESFET).
High Electron Mobility Transistor (HEMT).
CLASS 22 (March 2) [Daily Prep]
Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
fundamentals.
Ideal MOS capacitor.
MID-TERM EXAM (March 3)
Spring Break (March 7)
Spring Break (March 9)
Spring Break (March 11)
CLASS 23 (March 14) [No Daily Prep]
MOS capacitor electrostatics.
CLASS 24 (March 16) [Daily Prep]
Real (i.e., beyond ideal) MOS capacitor.
MOSFET threshold voltage.
HomeWork #7 (due Mar
23): Chapter 6, Nos. 9, 10 (plot C-V curve);
* reproduce Fig. 6-14 (use the same parameters as given in that figure), and
show both the full theory (from Eq. 6-24) and the depletion approximation (1
point); identify which terms in Eq. 6-24 correspond to the depletion
approximation (1 point).
* reproduce Fig. 6-20, which shows the MOS threshold voltage as a function of
substrate doping density (use the same parameters as given in that figure).
CLASS 25 (March 17)
Review of Mid-Term Exam.
CLASS 26 (March 18) [Daily Prep]
MOS capacitor C-V relationship.
CLASS 27 (March 21) [Daily Prep]
MOSFET I-V characteristics.
CLASS 28 (March 23) [Daily Prep]
MOSFET I-V characteristics (continued).
MOSFET threshold voltage control.
HomeWork #8 (due
Friday, Apr 1): Chapter 6, Nos. 11, 19, 20;
* Follow Example 6-4 and calculate the threshold voltages for gate and field
oxides for a p-channel device with a doping density of 10^17 cm^-3;
* Follow Example 6-5 (for the above doping density), and produce a graph like Figure 6-36; in particular, what Boron dose reduces the threshold voltage to zero?
Easter Holiday (March 25)
Easter Holiday (March 28)
CLASS 29 (March 30) [Daily Prep]
MOSFET scaling and related effects.
CLASS 30 (April 1) [Daily Prep]
Photovoltaic effect.
Photodiodes.
HomeWork #9 (due Apr 8): Chapter 8, Nos. 1, 2, 3, 4, 13.
CLASS 31 (April 6) [Daily Prep]
Solar cells.
Photodetectors.
CLASS 32 (April 8) [Daily Prep]
Light-Emitting Diode (LED).
HomeWork #10 (due Apr 15): Chapter 8, Nos. 7, 10, 14, 15, 18.
CLASS 33 (April 11) [Daily Prep]
Lasers.
CLASS 34 (April 13) [Daily Prep]
Semiconductor Lasers.
CLASS 35 (April 15) [Daily Prep]
Negative conductance microwave devices.
Tunnel Diode.
HomeWork #11 (due Apr 22): Chapter 10, Nos. 1, 2; Chapter 11, Nos. 1, 2, 3.
CLASS 36 (April 18) [Daily Prep]
Gunn Effect and Gunn Diode.
CLASS 37 (April 20) [Daily Prep]
Shockley (p-n-p-n) Diode.
CLASS 38 (April 22) [No Daily Prep]
Basics of IC fabrication processes.
STUDENT PRESENTATIONS (April 25) [5:00 – 7:30 pm,
Engineering Board Room, Fitz 258]
FINAL EXAM (May 5)
Place: Classroom
Time: 8:00 - 10:00 a.m.