2000
Journal Publications
A.F.
Tsatsul'nikov, A.R. Kovsh, A.E. Zhukov, Yu.M. Shernyakov,
Yu.G. Musikhin, V.M Ustinove, N.A. Bert, P.S. Kop'ev, Zh.I.
Alferov, A.M. Mintairov, J.L. Merz, N.N. Ledentsov, and D.
Bimberg, "Vollmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As
quantum dots emitting at 1.3 µm", J. Appl. Phys.
88, 6272-6275 (1 December 2000).
Árpád I. Csurgay, Wolfgang, Porod, Craig S.
Lent, "Signal Processing with Near-Neighbor-Coupled Time-Varying
Quantum-Dot Arrays" IEEE Transactions on Circuits and
Systems, Part I., pp. 1212 - 1223, August, 2000.
A. M. Mintairov, O.V. Kovalenkov, J. L. Merz, Yu. G. Musikhin,
S. V. Osinski, J. P. Reynolds, I. S. Tarasov, D. A. Vinokurov,
A. S. Vlasov, “Apparent Microcavity Effect in the Near-field
Photoluminescence of a Single Quantum Dot”, 8th International
Symposium on Nanostructures: Physics and Technology, St Petersburg,
Russia, June 19-23, 2000; Nanotechnology (Institute of Physics
Publishing, Bristol, England), p. 232-235 (June 2000).
S. Raymond, K. Hinzer, S. Fafard, and J. L. Merz, “Experimental
Method to Determine Auger Capture Coefficients in Self-Assembled
Dots”, Phys. Rev. B, Rapid Communications 61, No.24,
R16,331-R16,334 (15 June 2000)
A. M. Mintairov, A. S. Vlasov, J. L. Merz, O. V. Kovalenkov,
D. A. Vinokurov, “Strong photon-exciton coupling in
the near-field luminescence of semiconductor quantum dots”,
Proceedings of the Symposium on Morphological and Compositional
Evolution of Heteroepiaxial Semiconductor Thin Films, Spring
Meeting of the Materials Research Society, San Francisco,
CA, May 2000; MRS Symposium Proceedings 618, 207-212 (2000).
Árpád I. Csurgay, Wolfgang Porod, “Toward
Inegrated Nanoelectronic’s”, Proc. of the IEEE
International Symposium on Circuits and Systems, ISCAS’2000,
Geneva, May, 2000
Alexander Minatairov, James L. Merz, Andrei Osinsky, Vladimir
Fuflyigin, and L.D. Zhu, “Infrared Spectroscopy of ZnSiN2
Single Crystalline Films on r-Sapphire”, Appl. Phys.
Letters 76, 2517-2519 (1 May 2000).
C. Gerousis, X. Wang, G. Toth, S. M. Goodnick, W. Porod, C.
S. Lent, and Á. I. Csurgay, “Modeling Nanoelectronic
CNN Cells: CMOS, SETs and QCAs”, Proceedings of the
IEEE International Symposium on Circuits and Systems, Geneva,
May 2000.
L.M. Sparing, A.M. Mintairov, J.H. Hodak, I.B. Martini, G.V.
Hartland, U. Bindley, S. Lee, J.K. Furdyna, J.L. Merz, and
G.L. Snider, “Effect of Ion Induced Damage on Carrier
Lifetimes in Strained CdZnSe/ZnSe Quantum Wells”, J.
Appl. Physics 87, 3063-3067 (15 March 2000).
M. W. Dashiell, R. T. Troeger, S. L. Rommel, T. N. Adam, P.
R. Berger, J. Kolodzey, A. C. Seabaugh, and R. Lake, “Current
voltage characteristics of high current density silicon Esaki
diodes grown by molecular beam epitaxy and the influence of
thermal annealing”, IEEE Trans. Electron Dev. 47 1707-1714
(2000).
A. O. Orlov, I. Amlani, R. K. Kummamuru, R. Ramasubramaniam,
G. Toth, C. S. Lent, G. H. Bernstein, and G. L. Snider, "Experimental
Demonstration of Clocked Single-Electron Switching in Quantum-dot
Cellular Automata," Appl. Phys. Lett., 77(2), pp. 295-297
(2000).
I. Amlani, A. O. Orlov, R. K. Kummamuru, G. H. Bernstein,
C. S. Lent, and G. L. Snider, "Experimental Demonstration
of a Leadless Quantum-dot Cellular Automata Cell," Appl.
Phys. Lett., 77(5), pp. 738-740 (2000).
P. Fay, K. Stevens, J. Elliot, and N. Pan, “Gate Length
Scaling in High Performance InGaP/InGaAs/GaAs PHEMTs,”
IEEE Electron Device Lett., vol. 21, no. 4, pp. 141-143, 2000.
P. Fay, “Introduction to Microwave and RF Engineering,”
The RF and Microwave Handbook, J. Michael Golio, ed., CRC
Press, Boca Raton, 2000.
B. D. Weaver, E. M. Jackson, A. C. Seabaugh, and P. van der
Wagt, “MeV ion-induced suppression of resonance current
in InP-based resonant tunneling diodes”, Appl. Phys.
Lett. 76 2562-2564 (2000).
A.M. Mintairov, F.C. Peiris, S. Lee, U. Bindley, J. K. Furdyna,
S. Raymond, J. L. Merz, V. G. Melehin, and K. Sadchikov, “Optical
spectra of wide band gap BexZn1-xSe alloys”, Semiconductors
33, No. 9, p.1121-1123 (2000).
P. Fay and I. Adesida, “Processing of Epitaxial Heterostructure
Devices,” Volume 1: Heterostructures for High-Performance
Devices, pp. 55-102, Maurice Francome and Colin E. C. Wood,
eds., Handbook of Thin Film Devices: Frontiers of Research,
Technology and Applications, Academic Press, 2000.
M. Lieberman, S. Chellamma, B. Varughese, Y. Wang, C. S. Lent,
G. H. Bernstein, G. L. Snider, and F. C. Peiris, "Quantum-dot
Cellular Automata at a Molecular Scale," Proc. of the
Conf. on Molecular Electronics, Hilo, HI (2000).
A. C. Seabaugh, Z. Hu, Q. Liu, D. Rink, and J. Wang,"Silicon-Based
Tunnel Diodes and Integrated Circuits", 4th Int. Workshop
on Quantum Functional Devices, pp. 5-8 (2000).
Z. Li and M. Lieberman, "Axial Reactivity of Soluble
Silicon(IV) Phthalocyanines," Inorg. Chem. 2001, 40,
932-939.
Sundargopal Ghosh, Maoyu Shang, and Thomas P. Fehlner, "Comparison
of the geometric and molecular orbital structures of (Cp*Cr)2B4H8
and (Cp*Re)2B4H8, Cp* = h5-C5Me5. Structural consequences
of delocalized electronic unsaturation in a metallaborane
cluster", J. Organomet. Chem., 614-615, 92 (2000).
Xinjian Lei, Maoyu Shang and Thomas P. Fehlner, "Fine
Tuning Metallaborane Geometries: Chemistry of Iridaboranes
Derived from the Reaction of [Cp*Ir)2HxCl4-x] with LiBH4,
Cp* = h5-C5Me5”, Chem., Eur. J., 6, 2663 (2000).
C. B. DeMelo, D.C. Hall, G.L. Snider, D. Xu, G. Kramer, and
N. El-Zein, “High-Electron-Mobility InGaAs-GaAs Field-Effect
Transistor with Thermally Oxidized AlAs Gate Insulator,”
Electronics Letters, vol. 36, pp. 84-86 (2000).
Sundargopal Ghosh, Xinjian Lei, Maoyu Shang and Thomas P.
Fehlner, "Role of the Transition Metal in Metallaborane
Chemistry. Reactivity of (Cp*ReH2)2B4H4 with BH3.thf, CO and
Co2 (CO)8", Inorg. Chem. 39, 5373 (2000).
Arpad I. Csurgay, Wolfgang Porod, and Craig S. Lent, “Signal
Processing with Near-Neighbor- Coupled Time-Varying Quantum-Dot
Arrays,” IEEE Transactions on Circuits and Systems I
47 (8), 1212-1223 (2000).
X. Wang and W. Porod, “Single-electron transistor analytic
I-V model for SPICE simulations,” Superlattices and
Microstructures 28 (5/6), 345-349 (2000).
Sundargopal Ghosh, Xinjian Lei, Christopher L. Cahill and
Thomas P. Fehlner, "Symmetrical Scission of a Coordinated
Tetraborane on CO Addition and Reassociation of the Coordinated
Diboranes on H2 Loss. Conversion of (Cp*ReH2)2B4H4 to (Cp*ReH2)(Cp*ReCO)B4H4
via the Intermediate (Cp*ReH2)(Cp*ReCO)(B2H3)2, Cp* = h5-C5Me5",
Angew. Chem. 39, 2900 (2000).
Xinjian Lei, Maoyu Shang, Thomas P. Fehlner, "Synthesis
and Characterization of (Cp*Ru)3Co(CO)2(m3-CO)B3H3, Cp* =
h5-C5Me5. A Metallaborane with Cubane Cluster Structure",
Organometallics, 19, 4429 (2000).
Alec Bailey, Maoyu Shang, and Thomas P. Fehlner, "Synthesis
and Characterization of a Novel Asymmetric Ferrocene Alkoxycarboxylate
of Titanium, Ti4O2(OiPr)6{(h5-O2CC5H4)Fe(h5-C5H5)}6",
Inorg. Chem. 39, 4374 (2000).
Melanie Peldo, Maoyu Shang and Thomas P. Fehlner, "Synthesis
and structure of [(h5-C5Me5)2WCl2(m-H)]2. A dinuclear tungsten
hydride with a double bond formed from the reaction of BH3thf
with (h5-C5Me5)WCl4" J. Organomet. Chem., 609 77 (2000).
T. P. Fehlner, "Systematic Metallaborane Chemistry",
Organometallics, 19, 2643 (2000)
Xinjian Lei, Maoyu Shang, and Thomas P. Fehlner, "The
Reaction of Phosphines and Pyridine with a Heterometal Metallaborane.
Ligand Substitution on Boron vs Metal Sites, Borane Displacement,
and Orthometallation of a Boron Coordinated Pyridine",
Organometallics, 19, 5266 (2000).
C. Gerousis, S. M. Goodnick, and W. Porod, “Toward nanoelectronic
cellular neural networks,” International Journal of
Circuit Theory and Applications 28, 523-535 (2000).
Xinjian Lei, Mayou Shang and Thomas P. Fehlner, "Utilization
of Transition Metal Properties to Control Polyborane Formation.
Synthesis of the arachno-Diiridahexaborane-12, 2,5-Cp*2Ir2B4H10
and Its Conversion to the nido-Diiridahexaborane-10, 1,2-Cp*2Ir2B4H8,
(Cp* = h5-C5Me5)", Organometallics, 19, 118 (2000).
A.M. Mintairov, P. A. Blagnov, J. L. Merz, V. M. Ustinov,
and A.S. Vlasov, “Vibrational study of nitrogen incorporation
in InGaAsN alloys”, Proc. Int. Symp. Nanostructures:
Physics and Technology 2000, St. Petersburg, Russia p. 238-241
(2000).
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