Q. Zhang, S. Sutar, T. Kosel, A. C. Seabaugh, "Fully-depleted Ge interband tunnel transistor: Modeling and junction formation," Solid-State Electronics, 53, 30-35, 2008. [pdf]
Q. Zhang, T. Fang, H. Xing, A. C. Seabaugh, and D. Jena, "Graphene nanoribbon tunnel transistors," IEEE Electron Dev. Lett., vol. 29 (12), pp. 1344-1346, 2008. [pdf]
D. Wheeler, T. Kosel, A. C. Seabaugh, L. Froberg, C. Thelader, and L.-E. Wernersson, "Current and capacitance-voltage characterization of HfO2/InAs and HfO2/Al2O3/InAs MOS capacitors formed by atomic-layer deposition," Electronic Materials Conf., 2008. [pdf]
Q. Zhang and A. C. Seabaugh, "Can the interband tunnel FET outperform Si CMOS?" 2008 Device Research Conf. Tech. Dig. [pdf]
S. Sutar, Q. Zhang, and A. C. Seabaugh, "Structural sensitivity on interband tunnel diodes for SRAM," 2008 Device Research Conf. Tech. Dig. [pdf]
I. Yoon, C. Yi, T. Kim, A.S. Brown, and A. C. Seabaugh, "Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and Si02 substrates," J. Vac. Sci Technol. B (Microelectronics and Nanometer Stuctures) 25, pp. 945-947, 2007. [pdf]
M. Remskar, J. Kovac, M. Virsek, M. Mrak, A. Jesih, and A. C. Seabaugh, "W5O14 nanowires," Advanced Functional Materials 17, 1974-1978, 2007. [pdf]
Z. Racz and A. C. Seabaugh, "Characterization and control of unconfined lateral diffusion under stencil masks," J. Vac. Sci. Technol. B 25, pp. 857-861, 2007. [pdf]
J. Zhao, A. C. Seabaugh, and T. H. Kosel, "Rapid melt growth of germanium tunnel junctions," J. Electrochem. Soc. 154, pp. H536-539, 2007. [pdf]
B. Wu, D. Wheeler, Q. Zhang, P. Fay, A. C. Seabaugh, C. Yi, I. Yoon, A. Brown and T. F. Kuech, "Current-voltage measurements and photoconductance spectroscopy of ultrathin InAs grown on (211) Si," Materials Research Society spring meeting, 2007. [pdf]
D. Wheeler, A. C. Seabaugh, L. Froberg, C. Thelander, and L.-E. Wernersson, "Electrical properties of HfO2/InAs MOS capacitors," Int. Semicon. Dev. Res. Symp., 2007, pp. 391-392, University of Maryland. [pdf]
B. Wu, D. Wheeler, C. Yi, I. Yoon, S. Jha, A. Brown, T. Kuech, P. Fay, and A. C. Seabaugh, "InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs," Int. Semicon. Dev. Res. Symp., 2007, pp. 371-372, University of Maryland. [pdf]
Q. Zhang, S. Sutar, T. Kosel, and A. C. Seabaugh, "Rapid melt growth of Ge tunnel junctions for interband tunnel transistors," Int. Semicon. Dev. Res. Symp., 2007, pp. 485-486, University of Maryland. [pdf]
D. Wheeler, B. Wu, P. Fay, A. C. Seabaugh, C. Yi, I. Yoon, A. Brown, and T. Kuech, "InAs-on-Silicon-on-insulator (SOI) composite-channel MOSFETs," Semiconductor Research Corporation (SRC) Techcon 2007, Austin, Texas. [pdf]
P. Caroff, M. Jeppsson, D. Wheeler, M. Keplinger, B. Mandl, J. Stangl, A. C. Seabaugh, G. Bauer, and L.-E. Wernersson, "InAs film grown on Si(111) by metalorganic vapor phase epitaxy," Int. Conf. Nano Sci and Technol (ICN+T 2007), Stokholm, Sweden. [pdf]
Q. Zhang, W. Zhao, and A. C. Seabaugh, "Low-subthreshold-swing transistors," IEEE Electron Dev. Lett., vol. 27, pp. 297-300, 2006. [pdf]
W. Zhao, A. C. Seabaugh, B. Winstead, D. Jovanovich, and V. Adams, "Influence of uniaxial tensile strain on the performance of partially depleted SOI CMOS ring oscillators," IEEE Electron Dev. Lett. 27, pp. 52-54, 2006. [pdf]
A. C. Seabaugh, Q. Liu, S. Sutar, Q. Zhang, W. Zhao, J. Zhao, Y. Yan, D. Wheeler, B. Wu, S. Kabeer, Z. Racz, and P. Fay, "Low power, high speed, and mixed-signal tunneling device technology," Extended abstracts of the Int. COE Workshop on Nano Processes and Devices, and their Applications, pp. 37-38, 2005. [pdf]
L.-E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhang, W. Seifert, T. Kosel, and A. C. Seabaugh, "A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra shallow junction formation," IEEE Trans. Nanotechnology, vol. 4, pp. 594-598, 2005. [pdf]
Q. Liu and A. C. Seabaugh, "Design approach using tunnel diodes for lowering power in differential amplifiers," IEEE Trans. Circuit Syst. II, Exp. Briefs, pp. 572-575, 2005. [pdf]
W. Zhao, A. C. Seabaugh, V. Adams, D. Jovanovic, and B. Winstead, "Opposing dependence of the electron and hole gate currents in SOI MOSFETs under uniaxial strain," IEEE Electron Device Lett., vol. 26, pp. 410-412, 2005. [pdf]
Q. Liu, S. Sutar, and A.C. Seabaugh, "Tunnel diode/transistor differential comparator," in Selected Topics in Electronics and Systems - vol. 35 High Performance Devices, Proc. of the 2004 IEEE Lester Eastman Conference on High Performance Devices, ed. by R. E. Leoni III, (World Scientific 2005), pp. 640-645. [pdf]
W. Zhao, A. C. Seabaugh, B. Winstead, D. Jovanovic, and V. Adams, "Impact of uniaxial strain on the gate leakage currents of PD-SOI MOSFETs and ring oscillators with ultra-thin gate dielectric," 2005 Device Research Conference, pp. 199-200. [pdf]
Q. Zhang, W. Zhao, and A. C. Seabaugh, "Analytic expression and approach for low-subthreshold-swing tunnel transistors," 2005 Device Research Conference, pp. 161-162. [pdf]
Q. Liu and A. C. Seabaugh, "Tunnel diode/transistor differential comparator," 2004 Lester Eastman Conference on High Performance Devices. [pdf]
2004 Device Research Conference, University of Notre Dame. [photo]
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Q. Liu, A. C. Seabaugh, P. Chahal, and F. J. Morris, "Unified AC model for the resonant tunneling diode," IEEE Trans. Electron Devices, vol. 51, pp. 653-657, 2004. [pdf]
W. Zhao, J. He, R. E. Belford, L.-E. Wernersson, and A. C. Seabaugh, "Partially depleted SOI MOSFETs under uniaxial tensile strain," IEEE Trans. Electron Devices, vol. 51, pp. 317-323, 2004. [pdf]
Z. Racz, J. He, S. Srinivasan, W. Zhao, A. C. Seabaugh, K. Han, P. Ruchhoeft, and J. Wolfe, "Nanofabrication using nanotranslated stencil masks and lift off," J. Vac. Sci. Technol. B 22, 74-76, 2004. [pdf]
L.-E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhang, W. Seifert, T. Kosel, and A. C. Seabaugh, "SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion," Electronic Letters, vol. 40, no. 1, pp. 83-85, 2004. [pdf]
Y. Yan, J. Zhao, Q. Liu, W. Zhao, and A. C. Seabaugh, "Vertical tunnel diodes on high resistivity silicon," 2004 Dev. Res. Conf. Digest, pp. 27-28. [pdf]
J. Wang, D. Wheeler, Y. Yan, J. Zhao, S. Howard, and A. C. Seabaugh, "Silicon tunnel diodes formed by proximity rapid thermal diffusion," IEEE Electron Device Lett., vol. 24, pp. 93-95, 2003. [pdf]
L.-E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhao, Y. Yan, W. Seifert, and A. C. Seabaugh, "A combined UHV-CVD and rapid thermal diffusion process for SiGe Esaki diodes by ultra shallow junction formation," Int. Semicond. Dev. Research Conference Proceedings, 2003. [pdf]
Q. Liu and A. C. Seabaugh, "New physical understanding of the resonant tunneling diode small-signal equivalent circuit," Device Research Conference, pp. 2, 2003. [pdf]
J. Wang, D. Wheeler, Y. Yan, J. Zhao, S. Howard, and A. C. Seabaugh, "Silicon tunnel diodes formed by proximity rapid thermal diffusion," 2002 Lester Eastman Conference on High Performances Devices. [pdf]
R. E. Belford, W. Zhao, J. Potashnik, Q. Liu, and A. C. Seabaugh, "Performance-augmented CMOS using back-end uniaxial strain," 60th Device Research Conference Digest, 2002. [pdf]
E. M. Jackson, B. D. Weaver, S. Shojah-Ardalan, R. Wilkins, A. C. Seabaugh, and B. Brar, "Irradiation effects in InGaAs/InAlAs high electron mobility transistors," Appl. Phys. Lett. vol. 79, no. 14, 2279-2281, 2001. [pdf]
A. C. Seabaugh, Z. Hu, Q. Liu, D. Rink, and J. Wang, "Silicon-based tunnel diodes and integrated circuits," 4th International Workshop on Quantum Functional Devices, pp. 5-8, 2000. [pdf]
B. D. Weaver, E. M. Jackson, G. P. Summers, and A. C. Seabaugh, "Disorder-effects in reduced dimension: InP resonant tunneling diodes," J. Appl. Phys. 88, 6951, 2000. [pdf]
B. D. Weaver, E. M. Jackson, A. C. Seabaugh, and P. van der Wagt, "MeV ion-induced suppression of resonance current in InP-based resonant tunneling diodes," Appl. Phys. Lett., vol. 76, no. 18, 2562-2564, 2000. [pdf]
M. W. Dashiell, R. T. Troeger, S. L. Rommel, T. N. Adam, P. R. Berger, C. Guedj, J. Kolodzey, A. C. Seabaugh, and R. Lake, "Current–voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing," IEEE Trans. Electron Devices, vol. 47, no. 9, pp. 1707-1714, 2000. [pdf]
P. E. Thompson, K. D. Hobart, M. E. Twigg, S. L. Rommel, H. Jin, P. R. Berger, R. Lake, A. C. Seabaugh, P. H. Chi and D. S. Simons, "Epitaxial Si-Based Tunnel Diodes," Thin Solid Films 380, pp. 145-150, 2000. [pdf]
A. C. Seabaugh, "Promise of Tunnel Diode Integrated Circuits," Si Tunnnel Diode and CMOS/HBT Integration Workshop, Naval Research Laboratory, 1999. Abstract [pdf] Presentation [pdf]
T. P. E. Broekaert, B. Brar, F. Morris, A. C. Seabaugh, and G. Frazier, "Resonant tunneling technology for mixed signal and digital circuits in the multi-GHz domain," Proc. Ninth Great Lakes Symp. on VLSI, 1999. [pdf]
A. C. Seabaugh, B. Brar, T. Broekaert, F. Morris, P. van der Wagt, and G. Frazier, "Resonant-tunneling mixed-signal circuit technology," Solid-State Electronics 43, pp. 1355-1365, 1999. [pdf]
S. L. Rommel, T. E. Dillon, P. R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, and A. C. Seabaugh, "Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities," IEEE Electron Device Lett., vol. 20, 1999. [pdf]
A. C. Seabaugh, X. Deng, T. Blake, B. Brar, T. Broekaert, R. Lake, F. Morris, and G. Frazier, "Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory," IEEE Int. Symp. Comp. Semicond. (Inst. Phys. Publ.) pp. 429-432, 1998. [pdf]
A. C. Seabaugh and R. Lake, "Tunnel diodes," Encyclop. Appl. Phys. 22 (Am. Inst. Phys. VCH Pub. NY 1998) pp. 335-359. [pdf]
R. Lake, B. Brar, G. D. Wilk, A. C. Seabaugh, and G. Klimeck, "Resonant tunneling in disordered materials such as Si02/Si/Si02," 1997 IEEE Int. Symp. Comp. Semicond. (Inst. Phys. Publ.) pp. 617-620, 1998. [pdf]
T. P. E. Broekaert, B. Brar, P. van der Wagt, A. C. Seabaugh, F. J. Morris, T. S. Moise, E. A. Beam, and G. A. Frazier, "A monolithic 4-Bit 2-Gsps resonant tunneling analog-to-digital converter," IEEE J. Solid-State Circuits, vol. 33, no. 9, 1998. [pdf]
