Alan Seabaugh Dr. Seabaugh joined the Notre Dame faculty in September 1999 from Raytheon Systems Company (1997-1999), Texas Instruments (1986-1997) and the National Bureau of Standards (1979-1986). His research interests are in nanoelectronic devices and circuits, tunneling devices and applications, nanofabrication, and energy harvesting.
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Ke Chen
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Group News After a six-month postdoc appointment with MIND at Notre Dame, Dane Wheeler is now a research staff member in the microelectronics lab at HRL Laboratories in Malibu, Calif. (Nov. 2009). Qin Zhang has been awarded the NIST/MIND Postdoctoral Fellowship. She is based at NIST's Semiconductor Electronics Division in Gaithersburg, Md. (Oct. 2009). Dane Wheeler successfully defended his doctoral dissertation on "High-k InAs metal-oxide-semiconductor capacitors" (April 2009). Kamal Karda's paper "Bistable-body tunnel SRAM" has been accepted for presentation at the International Conference on IC Design and Technology in Austin, TX, May 18-20 (April 2009). Surajit Sutar successfully defended his doctoral dissertation on "Tunneling-based memory and advances in InP-based processing" (April 2009). Qin Zhang successfully defended her doctoral dissertation on "Interband tunnel transistors" (March 2009). Qin Zhang's paper entitled "Graphene nanoribbon tunnel transistors" was the top paper accessed in IEEE Electron Device Letters. A second paper by Qin, "Low-subthreshold-swing tunnel transistors," also made the IEEE EDL top-5 list (Dec. 2008). Dr. Siyu Koswatta comes to Notre Dame, serving as the IBM assignee to MIND. His work focuses on the design, modeling and simulation of low-power devices (Dec. 2008). Qin Zhang and Surajit Sutar show by simulation that the Ge interband tunnel diodes can reduce power by 2x relative to 45 nm MOSFET technology. Fabricated epitaxial junctions using rapid melt growth techniques show substantial junction nonuniformity using Al as the carrier metal. (Solid State Electronics, Nov. 2008) Dane Wheeler presented a paper on high-k InAs MOS capacitors at the SRC TECHCON in Austin, Texas. (Nov. 2008) Qin Zhang (et al) predict sub-mV/decade graphene nanoribbon tunnel transistor performance in paper published in IEEE Electron Device Letters (Nov. 2008). |
Sajid Kabeer Sajid received his bachelor of technology degree in 2001 from the Indian Institute of Technology (Madras, Tamil Nadu, India). He received his master's degree in electrical engineering from the University of Notre Dame in 2003 and expects to complete his Ph.D. in electrical engineering at Notre Dame in December 2009. Sajid's research interests are tunnel diodes in various material systems (Si, Ge, InGaAs), tunneling field-effect transistors, and tunnel diode-based circuits.
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Kamal Karda Kamal received his bachelor's degree in electronics engineering from the University of Pune (India) in 2007. He is pursuing his master's degree in electrical engineering, which he will complete in November 2009. His research interests are in novel semiconductor memory devices and cells.
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Surajit Sutar Surajit received his bachelor's degree in electrical engineering from the Regional Engineering College (Jaipur, India) in 2000. He completed course work for his master's degree in electrical engineering at Notre Dame in 2003, and received his Ph.D. in electrical engineering at Notre Dame in May 2009. Surajit currently is a postdoc researcher at Notre Dame. His research interests are semiconductor device physics, III-V semiconductors, semiconductory memory, and low-power applications.
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Tim Vasen Originally from Montgomery, Ill., Tim received his bachelor's degree in electrical engineering from Valparaiso University (Valparaiso, Indiana) in 2007. He is currently working toward his Ph.D. in the department of electrical engineering at the University of Notre Dame. Tim's research interests are semiconductor devices and noise in such devices.
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Bin Wu Bin received her bachelor's degree in electronic materials and devices from Jilin University (Changchun, Jilin, China) in 2000 and her master's degree in electrical engineering from the University of Notre Dame in 2003. Bin's research is focused on solid state devices and energy-related areas. She will complete her Ph.D. studies in electrical engineering at Notre Dame in December 2009.
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Qin Zhang Qin received her bachelor's degree in electrical engineering in 2003 from Tsinghua University (Beijing, China) and her Ph.D. in electrical engineering in 2009 from the University of Notre Dame. As recipient of the NIST/MIND Postdoctoral Fellowship, she currently is working in NIST's Semiconductor Electronics Division in Gaithersburg, Md. Her research interests are tunneling FET design and modeling for Si, Ge, III-V, and graphene nanoribbons; sub-micron Ge and III-V tunnel diode fabrication; and TSRAM based on III-V tunnel diodes. |
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