Dr. Alan C. Seabaugh
Professor, Electrical Engineering, www.nd.edu/~nano, Frank M. Freimann Director, Midwest Institute for Nanoelectronics Discovery (MIND) mind.nd.edu, Associate Director, Notre Dame Center for Nano Science and Technology (NDnano) www.nd.edu/~ndnano

Contact information: University of Notre Dame, Department of Electrical Engineering, 230A Fitzpatrick Hall, Notre Dame, IN 46556, (574) 631-4473 (office) -4393 (fax), seabaugh.1@nd.edu

Education: B.S. (1977), M.S. (1979), Ph.D. (1985) Electrical Engineering, Univ. of Virginia

Research at Notre Dame (1999-present): Electron devices and circuits, nanoelectronics, energy harvesting, nanofabrication, tunneling-based devices: sensors, imagers, transistors, and memory.

Raytheon/Texas Instruments (1986-1999): Developed resonant-tunneling circuit technology for digital and analog/mixed signal applications (5-100 GHz) and memory. Led group demonstrating first resonant tunneling analog-to-digital converter (4 bits, 3 GSps), demonstrated first integrated bipolar resonant tunneling transistor (RTT) full adder, co-demonstrated first room temperature current gain in tunnel-emitter hot electron transistor, co-demonstrated first bipolar quantum well RTT (BiQuaRTT), demonstrated first 9-state SRAM cell.

University of Texas at Dallas Visiting Lecturer: EE3301 Electrical Network Analysis (1987), EE6320 Semiconductor Device Theory (1988, 1996), EE3310 Electronic Devices (1989), EE6321 Advanced Semiconductor Device Theory (1997). Received the Teacher of the Year award from the student chapter of the IEEE 1989-1990.

National Bureau of Standards Electronics Engineer (1979-1986): NBS graduate research fellowship (1981-84). Developed electronic characterization methods and apparatus for GaAs, including resistivity, Hall-effect, deep-level transient spectroscopy, photocapacitance, and photocurrent measurement systems. Revised the ASTM standard method F76 for measuring resistivity and Hall effect.

Publications, Patents, Presentations: publications/authored and coauthored >200; 4 book chapters; 22 patents authored and coauthored, 10 foreign; 90+ invited presentations, Ph.D. thesis (1985): Transient photoresistance spectroscopy of deep levels in high resistivity semiconductors. M.S. thesis (1979): GaAs liquid phase epitaxy for millimeter wave Schottky diodes.

Awards: ISCS Quantum Devices Award (2011) for “seminal contributions and leadership in semiconductor devices and circuits based on quantum mechanical tunneling such as tunnel field-effect transistors and resonant tunneling transistors.” IEEE Fellow (2003) “for contributions to high speed and nanoelectronic device and circuit technology.” Outstanding Teacher Award 2001. DARPA Sustained Superior Performance award (1997) and DARPA Outstanding Performance by a Project Manager award (1998), IEEE Computer Society Outstanding Paper Award (coauthored, 1994). TI Achievement Award for “Demonstration of the world’s first room temperature resonant tunneling integrated circuit” (1992), Teacher of the Year Award University of Texas at Dallas, student chapter of the IEEE (1989-1990). TI Achievement Award for “Demonstration of the world’s first pseudomorphic bipolar quantum resonant tunneling transistor” (1988). Promotions: Elected to Raytheon Senior Fellow (1999), Texas Instruments’ Distinguished Member of Technical Staff (1997), and Texas Instruments’ Senior Member of Technical Staff (1991).

Teaching, University of Notre Dame: EE47008/40448 Electrical Energy Extraction (2008, 2011), EE60542 Analog Integrated Circuit Design (2008, 2010, 2011, 2012), EE20242 Electronics I (2006-7), EE67026 Energy-Constrained Devices and Circuits (2006), EE67024 Communications Circuit Design (2005), EE486 Digital and Analog Integrated Circuits (2005), EE30348 Electromagnetic Fields and Waves (2000, 2002, 2009, 2010), EE598F Analog CMOS Design (2001, 2003, 2004), EE598 RF Integrated Circuit Design (2002), EE556 Fundamentals of Semiconductor Physics (2001, 2003, 2004), EE342/30342 Electronics II (2000-2, 2009), EE598F Advanced IC Laboratory Techniques (2000), EE598F Advanced Studies in Semiconductor Devices (1999).

Professional Memberships and Committees: Editorial board IEEE Trans. Electron Dev. (2010-present), Fellow IEEE, Member APS. VLSI Symposium Technical Program Committee (2009-present), Silicon Nanoelectronics Workshop Technical Program Committee 2010, IEEE NANO 2010 Technical Program Committee, IEEE Electron Device Society Nanotechnology Committee Chair (2001-2004), Device Research Conference General Chair (2005), Technical Program Chair (2004) technical program committee (1993-1995, 2001-2003), DRC Local Arrangements Chair (2001), Silicon Nanoelectronics Workshop Technical Program Chair (1996), General Chair (1998), program committee (1999-2001), Advanced Heterostructure Transistor Workshop (1998), Int. Electron Dev. Mtg. technical program committee (1999, 2000). Referee for Electronics Lett., IEEE Electron Dev. Lett., IEEE Trans. Electron Dev., Appl. Phys. Lett., J. Appl. Phys., Electronics Letters, Nano Letters, J. Vacuum Society B (~1988-present). IEEE Proceedings guest editor - Quantum Devices and Their Applications (1999). Patent Committee: Texas Instruments (1991-1997), Raytheon Systems Company (1997-1999). SRC Si Tunnel Diode and CMOS/HBT Integration Workshop (1999)

PUBLICATIONS CONTENTS

1. Archival Publications
2. Book Contributions
3. Short Courses
4. Invited Papers and Presentations
5. Industry/Trade/Government Publications
6. Conference Proceedings
7. Theses
8. U.S. Patents
9. Foreign Patents
10. Provisional Patents

SUMMARY

1. Archival Publications

[84]     W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. Xing, A. Seabaugh, and D. Jena, “Transistors with chemically synthesized layered semiconductor WS₂ exhibiting 10⁵ room temperature modulation and ambipolar behavior,” submitted, Appl. Phys. Lett.

[83]     W. S. Hwang, K. Tahy, X. Li, H. Xing, A. Seabaugh, C. Y. Sung, and D. Jena, “Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene,” submitted, Appl. Phys. Lett.

[82]     G. Zhou, Y. Lu, R. Li, Q. Zhang, Q. Liu, T. Vasen, H. Zhu, J.-M. Kuo, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, and H. Xing, “InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and I_ON/I_OFF ratio near 10⁶,” accepted, IEEE Electron Dev. Lett.

[81]     W. S. Hwang, K. Tahy, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy Jr., D. K. Gaskill, H. Xing, A. C. Seabaugh, and D. Jena, “Fabrication of top-gated epitaxial graphene nano-ribbon FETs using hydrogen silsesquioxane (HSQ),”J. Vac. Sci. Technol. B., 30(3) 2012.

[80]     Y. Lu, G. Zhou, R. Li, Q. Liu, Q. Zhang, T. Vasen, S. D. Chae, T. Kosel, M. Wistey, H. Xing, A. Seabaugh, and P. Fay, “Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned,” accepted, IEEE Electron Device Lett.

[79]     R. Li, Y. Lu, G. Zhou, Q. Liu, S. D. Chae, T. Vasen, W. S. Hwang, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. Xing, and A. Seabaugh, “AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μA/μm at 0.5 V,” IEEE Electron Device Lett., 33, pp. 363-365 (2012).

[78]     Q. Zhang, G. Zhou, H. Xing, A. Seabaugh, K. Xu, S. Hong, O. Kirillov, C. Richter, and N. Nguyen, “Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy,” accepted, Appl. Phys. Lett.

[77]     R. Li, Y. Lu, S. D. Chae, G. Zhou, Q. Liu, C. Chen, M. S. Rahman, T. Vasen, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. Xing, S. Koswatta, and A. Seabaugh, “InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field,” Physica Status Solidi C, 9, no. 2, pp. 389-392, 2012.

[76]     G. Zhou, Y. Lu, R. Li, Q. Zhang, W. S. Hwang, Q. Liu, T. Vasen, C. Chen, H. Zhu, J.-M. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, and H. Xing, “Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate,” IEEE Electron Dev. Lett.32, pp. 1516-1518 (2011).

[75]     M. Remskar, Ales Mrzel, M. Virsek, M. Godec, A. Singh, and A. Seabaugh, “The MoS₂ nanotubes with defect-controlled electric properties,” Nanoscale Research Lett. 1-7 (2010).

[74]     A. Seabaugh and Q. Zhang, “Low voltage tunnel transistors for beyond-CMOS logic,” Proc. IEEE 98, 2095-2110 (2010).

[73]     K. Bernstein, R. Cavin, W. Porod, A. Seabaugh, and J. Welser, “Device and architecture outlook for beyond CMOS switches,” Proc. IEEE 98, 2169-2184 (2010).

[72]     K. Karda, S. Sutar, J. Nahas, J. Brockman, and A. Seabaugh, “Bistable-body tunnel SRAM,” IEEE Trans. Nanotechnology (2010).

[71]     S. Sutar, Q. Zhang, and A. Seabaugh, “InAlAs/InGaAs interband tunnel diodes for SRAM,” IEEE Trans. Electron Dev. 57, 2587-2593 (2010).

[70]     D. Wheeler, L.-E. Wernersson, L. Fröberg, C. Thelander, A. Mikkelsen, K.-J. Weststrate, A. Sonnet, E. M. Vogel, A. Seabaugh, “Deposition of HfO₂ on InAs by atomic-layer deposition,” Microelec. Eng. 86, 1561-1563 (2009).

[69]     Q. Zhang, S. Sutar, T. Kosel, and A. Seabaugh, “Fully-depleted Ge interband tunnel transistor: modeling and junction formation,” Solid State Electronics 53, 30-35 (2009).

[68]     Q. Zhang, T. Fang, H. Xing, A. Seabaugh, and D. Jena, “Graphene nanoribbon tunnel transistors,” IEEE Electron Dev. Lett. 29, 1344-1346 (2008).

[67]     S. Jha, X. Song, S. E. Babcock, T. F. Kuech, D. Wheeler, B. Wu, P. Fay, and A. Seabaugh, “Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy,” J. Crys. Gr. 310, 4772-4775 (2008).

[66]     I. Yoon, C. Yi, T. Kim, A. S. Brown, A. Seabaugh, “Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and SiO₂ substrates,” J. Vac. Sci. & Technol. B (Microelectronics and Nanometer Structures) 25, p. 945-947 (2007).

[65]     M. Remskar, J. Kovac, M. Virsek, M. Mrak, A. Jesih, and A. Seabaugh, “W₅O₁₄ nanowires,” Advanced Functional Materials, 17, 1974-1978 (2007).

[64]     Z. Racz and A. C. Seabaugh, “Characterization and control of unconfined lateral diffusion under stencil masks,” J. Vac. Sci. Technol. B, 25, 857-861 (2007).

[63]     J. Zhao, A. C. Seabaugh, and T. H. Kosel, “Rapid melt growth of germanium tunnel junctions,” J. Electrochem. Soc. 154, H536-539 (2007).

[62]     Q. Zhang, W. Zhao, and A. Seabaugh, “Low subthreshold swing transistors,” IEEE Electron Dev. Lett. 27, 297-300 (2006).

[61]     W. Zhao, A. Seabaugh, B. Winstead, D. Jovanovich, and V. Adams, “Influence of uniaxial tensile strain on the performance of partially depleted SOI CMOS ring oscillators,” IEEE Electron Dev. Lett. 27, 52-54 (2006).

[60]     S. L. Skala, W. Wu, J. R. Tucker, J. W. Lyding, A. Seabaugh, E. A. Beam, and D. Jovanovic, “Interface characterization in an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy,”]

[59]     W. Zhao, A. Seabaugh, V. Adams, D. Jovanovic, and B. Winstead, “Opposing dependence of the electron and hole gate currents in SOI MOSFETs under uniaxial strain,” IEEE Electron Device Lett. 26, 410-412 (2005).

[58]     Q. Liu and A. Seabaugh, “Design approach using tunnel diodes for lowering power in differential amplifiers,” IEEE Trans. Circ. Sys. – II: Express Briefs, 52, 572-575 (2005).

[57]     L.-E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhang, W. Seifert, T. Kosel, and A. Seabaugh, “A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra shallow junction formation,” IEEE Trans. Nanotechnology 4, 594-598 (2005).

[56]     W. Zhao, J. He, R. Belford, L-E Wernersson, and A. Seabaugh, “Partially-depleted SOI MOSFETs under uniaxial tensile strain,” IEEE Trans. Electron Dev. 51, 317-323 (2004).

[55]     L.-E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhang, W. Seifert, T. Kosel, and A. Seabaugh, “SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion,” Electronics Lett. 40, 83-85 (2004).

[54]     Q. Liu, A. Seabaugh, P. Chahal, and F. Morris, “Unified AC model for the resonant tunneling diode,” IEEE Trans. Electron Dev. 51, 653-657 (2004).

[53]     Z. Racz, J. He, S. Srinivasan, W. Zhao, A. Seabaugh, K. Han, P. Ruchhoeft, and J. Wolfe, “Nanofabrication using nanotranslated stencil masks and lift off,” J. Vac. Sci. Technol. B 22, 74-76 (2004).

[52]     J. Wang, D. Wheeler, Y. Yan, J. Zhao, S. Howard, and A. Seabaugh, “Silicon tunnel diodes formed by proximity rapid thermal diffusion,” IEEE Electron Device Lett. 24, 93-95 (2003).

[51]     E. M. Jackson, B. D. Weaver, S. Shojah-Ardalan, R. Wilkins, A. C. Seabaugh, and B. Brar, “Irradiation effects in InGaAs/InAlAs high electron mobility transistors,” Appl. Phys. Lett. 79, 2279-2281 (2001).

[50]     B. D. Weaver, E. M. Jackson, G. P. Summers, and A. C. Seabaugh, “Disorder-effects in reduced dimension: InP resonant tunneling diodes,” J. Appl. Phys. 88, 6951 (2000).

[49]     B. D. Weaver, E. M. Jackson, A. C. Seabaugh, and P. van der Wagt, “MeV ion-induced suppression of resonance current in InP-based resonant tunneling diodes,” Appl. Phys. Lett. 76 2562-2564 (2000).

[48]     M. W. Dashiell, R. T. Troeger, S. L. Rommel, T. N. Adam, P. R. Berger, J. Kolodzey, A. C. Seabaugh, and R. Lake, “Current voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing,” IEEE Trans. Electron Dev. 47 1707-1714 (2000).

[47]     P. E. Thompson, K. D. Hobart, M. E. Twigg, S. L. Rommel, N. Jin, P. R. Berger, R. Lake, A. C. Seabaugh, P. H. Chi and D. S. Simons, “Epitaxial Si-Based Tunnel Diodes,” Thin Solid Films, 380, pp. 145-150, (2000).

[46]     A. Seabaugh, B. Brar, T. Broekaert, F. Morris, and G. Frazier, “Resonant tunneling mixed signal circuit technology,” Solid-State Electronics 43 1355-1365 (1999).

[45]     T. P. E. Broekaert, B. Brar, J. P. A. van der Wagt, A. C. Seabaugh, T. S. Moise, F. J. Morris, E. A. Beam III, and G. A. Frazier, “A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter,” IEEE J. Solid State Circ. 33, 1342-1349 (1998).

[44]     P. E. Thompson, K. D. Hobart, M. Twigg, G. Jernigan, T. E. Dillon, S. L. Rommel, P. R. Berger, D. S. Simons, P. H. Chi, R. Lake, and A. C. Seabaugh, “Si resonant interband tunnel diodes grown by low temperature molecular beam epitaxy,” Appl. Phys. Lett. 75 1308-1310 (1999).

[43]     R. Wilkins, S. Shojah.-Ardalan, W. P. Kirk, G. F. Spencer, R. T. Bate, A. C. Seabaugh, R. Lake, P. Stelmaszyk, A. D. Wieck, and T. N. Fogarty, “Ionization and displacement damage irradiation studies of quantum devices: resonant tunneling diodes and two dimensional electron gas transistors,” IEEE Trans. on Nuclear Science, 46, pp. 1702-1707 (1999).

[42]     E. M. Jackson, B. D. Weaver, A. C. Seabaugh, J. P. A. van der Wagt, and E. Beam III, “Proton-induced disorder in InP-based resonant tunneling diodes,” Appl. Phys. Lett. 75 280-282 (1999).

[41]     J. P. A. van der Wagt, H. Tang, T. P. E. Broekaert, A. C. Seabaugh, and Y.-C. Kao, “Multibit resonant tunneling diode SRAM cell based on slew-rate addressing,” IEEE Trans. Electron Dev. 46, pp. 55-62 (1999).

[40]     S. L. Rommel, T. E. Dillon, P. R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, and A. C. Seabaugh, “Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities,” Electron Dev. Lett. 20, pp.329-331 (1999).

[39]    S. L. Rommel, T. E. Dillon III, M. W. Dashiell, H. Feng, J. Kolodzey, P. Berger, P. E. Thompson, K. D. Hobart, R. Lake, A. C. Seabaugh, G. Klimeck, and D. K. Blanks, “Room temperature operation of epitaxially grown Si/Si_0.5Ge_0.5/Si resonant interband tunneling diodes,” Appl. Phys. Lett. 73, 2191-2193 (1998).

[38]     J. P. A. van der Wagt, A. Seabaugh, and E. Beam, III, “RTD/HFET low standby power memory cell,” IEEE Electron Dev. Lett. 19, 7-9 (1998).

[37]     Y. Wei, R. M. Wallace, and A. C. Seabaugh, “Controlled growth of SiO₂ tunnel barrier and crystalline Si quantum wells for Si resonant tunneling diodes,” J. Appl. Phys. 81, 6415-6424 (1997).

[36]     T. P. E. Broekaert, J. N. Randall, E. A. Beam III, D. Jovanovic, A. C. Seabaugh, and B. D. Smith, “Functional InP/InGaAs lateral double barrier heterostructure resonant tunneling diodes by using etch and regrowth,” Appl. Phys. Lett. 69, 1918-1920 (1996).

[35]     J. N. Randall, T. P. E. Broekaert, B. D. Smith, E. A. Beam III, A. C. Seabaugh, and D. Jovanovic, “Fabrication of lateral resonant tunneling devices with heterostructure barriers,” J. Vac. Sci. Technol. B 14, 4038-4041 (1996).

[34]     S. Tang, R. M. Wallace, A. Seabaugh, and D King-Smith, “Band offset of ultrathin SiO₂/Si(100) interface: a first-principles study,” J. Appl. Phys. September, 1996.

[33]     B. Brar, G. D. Wilk, A. C. Seabaugh, “Direct extraction of the electron tunneling effective mass in ultrathin SiO₂,” Appl. Phys. Lett. 69, 2728-2730 (1996).

[32]     K. P. Clark, W. P. Kirk, and A. C. Seabaugh “Nonparabolicity effects in the bipolar quantum well resonant tunneling transistor,” Phys. Rev. B. 55, 7068-7072 (1997).

[31]     Y. Wei, R. M. Wallace, and A. Seabaugh, “Void formation on ultrathin thermal silicon oxide films on the Si (100) surface,” Appl. Phys. Lett. 69, 1270-1272 (1996).

[30]     K. P. Clark, W. P. Kirk, A. C. Seabaugh, and Y.-C. Kao, “Minority carrier magneto-oscillations in the bipolar quantum well resonant tunneling transistor,” J. Appl. Phys. 79, 2732-2737 (1996).

[29]     M. D. Taylor, G. C. Wetsel, Jr., S. E. McBride, R. C. Bowen, W. R. Frensley, A. C. Seabaugh, Y.-C. Kao, and E. A. Beam, “Nanoprobe-induced electrostatic lateral quantization in near-surface resonant-tunneling heterostructures,” Appl. Phys. Lett. 66 3621-3623 (1995).

[28]     S. L. Skala, W. Wu, J. R. Tucker, J. W. Lyding, A. Seabaugh, E. A. Beam, and D. Jovanovic, “Interface characterization in an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy,” J. Vac. Sci. Technol. B, 13, 660-663 (1995).

[27]     W. Wu, S. L. Skala, J. R. Tucker, J. W. Lyding, A. Seabaugh, E. A. Beam III, and D. Jovanovic, “Interface characterization of an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy,” J. Vac. Sci. Technol. A, 13, 602-606 (1995).

[26]     T. S. Moise, Y.-C. Kao, A. C. Seabaugh, and A. H. Taddiken, “Integration of resonant-tunneling and hot-electron transistors,” IEEE Electron Dev. Lett. 15, 254-256 (1994).

[25]     T. S. Moise, Y.-C. Kao, and A. C. Seabaugh, “Improved turn-on characteristics of a hot-electron transistor at 300 K,” IEEE Electron Dev. Lett. 15, 409-411 (1994).

[24]     A. C. Seabaugh, A. H. Taddiken, E. A. Beam III, J. N. Randall, Y.-C. Kao, and B. Newell, “Room temperature resonant tunneling bipolar transistor XNOR and XOR integrated circuits,” Electron. Lett. 29, 1802-1803 (1993).

[23]     A. C. Seabaugh, E. A. Beam III, A. H. Taddiken, J. N. Randall, and Y.-C. Kao, “Co-integration of resonant tunneling and heterojunction bipolar transistors on InP,” IEEE Electron Dev. Lett. 14,472-474 (1993).

[22]     T. S. Moise, Y.-C. Kao, and A. C. Seabaugh, “Room temperature operation of a tunneling hot electron transfer amplifier,” Appl. Phys. Lett., 64, 1138-1140 (1994).

[21]     T. S. Moise, A. C. Seabaugh, E. A. Beam III, and J. N. Randall, “Room temperature operation of a resonant-tunneling hot-electron transistor based integrated circuit,” IEEE Electron Dev. Lett. 14, 441-443 (1993).

[20]     E. A. Beam III, H. F. Chau, T. S. Henderson, W. Liu, and A. C. Seabaugh, “The use of organometallic group-V sources for the MOMBE of InGaP/GaAs and InGaAs/InP heterojunction bipolar device structures,” J. Crys. Gr. 136, 1-10 (1994).

[19]     C. H. Mikkelson, A. C. Seabaugh, E. A. Beam, J. H. Luscombe, and G. A. Frazier, “Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/ memory applications,” IEEE Trans. Electron Dev. 41, 132-137 (1994).

[18]     A. Raychaudhuri, Z. X. Yan, M. J. Deen, and A. C. Seabaugh, “Hysteresis in resonant-tunneling-diode-based multiple-peak driver device for multivalued SRAM cells: analysis, simulation, and experimental results,” Can. J. Phys. 70, 993-1000 (1992).

[17]     W. Liu, A. C. Seabaugh, A. Yuksel, T. Henderson, S.-K. Fan, and E. A. Beam III, “Observation of resonant tunneling in GaInP/GaAs/GaInP double heterojunction bipolar transistor at room temperature,” IEEE Trans. Electron Dev. 40, 1384-1389 (1993).

[16]     A. C. Seabaugh, J. H. Luscombe, J. N. Randall, P. C. Colter, A. Dip, G. M. Eldallal, and S. M. Bedair, “Atomic layer epitaxy of quantum-well devices,” J. Thin Sol. Films 225, 99-104 (1993).

[15]     J. N. Randall, A. C. Seabaugh, and J. H. Luscombe, “Fabrication of lateral resonant tunneling devices,” J. Vac. Sci. Technol. B 10, 2941-2944 (1992).

[14]     A. C. Seabaugh, Y. C. Kao, and H. T. Yuan, “Nine state resonant tunneling diode memory,” IEEE Electron Dev. Lett. 13, 479-481 (1992).

[13]     E. A. Beam III, T. S. Henderson, A. C. Seabaugh, and J. Y. Yang, “The use of tertiarybutylphosphine and tertiarybutylarsine for metalorganic molecular beam epitaxy of the In_0.53Ga_0.47As/InP and In_0.48Ga_0.52P/GaAs Materials Systems,” J. Crys. Gr. 116, 436446 (1992).

[12]     A. C. Seabaugh, J. N. Randall, Y.-C. Kao, J. H. Luscombe, and A. M. Bouchard, “In_0.52Al_0.48As/ In_0.53Ga_0.47As lateral resonant tunneling transistor,” Electron. Lett. 27, 1832-1834 (1991).

[11]     J. N. Randall, A. C. Seabaugh, Y.-C. Kao, J. H. Luscombe, and B. L. Newell, “Electric field coupling to quantum dot diodes,” J. Vac. Sci. Technol. B 9, 2893-2897 (1991).

[10]     A. C. Seabaugh, Y.-C. Kao, W. R. Frensley, J. N. Randall, and M. A. Reed, “Resonant-transmission in the base/collector junction of a bipolar quantum-well resonant-tunneling transistor,” Appl. Phys. Lett. 59, 3413-3415 (1991).

[9]       A. C. Seabaugh, Y.-C. Kao, H.-Y. Yiu, J. H. Luscombe, H.-L. Tsai, M. A. Reed, and W. R. Frensley, “Formation of rotation-induced superlattices and their observation by tunneling spectroscopy,” Appl. Phys. Lett. 59, 570-572 (1991).

[8]       A. Seabaugh, Y.-C. Kao, J. Randall, W. Frensley, and A. Khatibzadeh, “Room temperature hot electron transistors with InAs-notched resonant-tunneling-diode injector,” Jpn. J. Appl. Phys. 30, 921-925 (1991).

[7]       A. C. Seabaugh, W. R. Frensley, J. N. Randall, M. A. Reed, D. L. Farrington, and R. J. Matyi, “Pseudomorphic bipolar quantum resonant-tunneling transistor,” IEEE Trans. Electron Dev. 36, 23282334 (1989).

[6]       A. C. Seabaugh, W. R. Frensley, R. J. Matyi, and G. E. Cabaniss, “Electrochemical CV profiling of heterojunction device structures,” IEEE Trans. Electron Dev. 36, 309-313 (1989).

[5]       M. A. Reed, W. R. Frensley, R. J. Matyi, J. N. Randall, and A. C. Seabaugh, “Realization of a three-terminal resonant tunneling device: the bipolar quantum resonant tunneling transistor (BiQuaRTT),” Appl. Phys. Lett. 54, 1034-1036 (1989).

[4]       M. A. Reed, W. M. Duncan, W. R. Frensley, R. J. Matyi, A. C. Seabaugh, and H. L. Tsai, “Quantitative resonant tunneling spectroscopy: current-voltage characteristics of precisely characterized RTDs,” Appl. Phys. Lett. 54 1256-1258 (1989).

[3]       A. C. Seabaugh, “Selective etching of GaAs on AlGaAs using CCl₂F₂ and He,” J. Vac. Sci. Tech. B6, 77-81 (1988).

[2]       K. P. Pande and A. C. Seabaugh, “Low temperature plasma-enhanced epitaxy of GaAs,” J. Electrochem. Soc. 131, 1357-1359 (1984).

[1]       A. C. Seabaugh and R. J. Mattauch, “Removal of the high resistivity layer at the n on n+ liquid phase epitaxial layer-substrate interface by controlled in situ etchback,” J. Appl. Phys. 51, 6435-6437 (1980).

2. Book Contributions

[4]       Q. Liu, S. Sutar, and A. Seabaugh, “Tunnel diode/transistor differential comparator,” in Selected Topics in Electronics and Systems – Vol 35 High Performance Devices, Proc. of the 2004 IEEE Lester Eastman Conference on High Performance Devices, ed. by R. E. Leoni III, (World Scientific 2005), pp. 640-645.

[3]       A. Seabaugh and R. Lake, “Tunnel Diodes,” Encyclop. Appl. Phys. 22 (Am. Inst. Phys. VCH Pub. NY 1998) pp. 335-359.

[2]       A. C. Seabaugh and M. A. Reed, “Resonant tunneling transistors,” Heterostructures and Quantum Devices (a volume of VLSI Electronics), eds. N. G. Einspruch and W. R. Frensley, (Academic Press, Orlando, FL 1994) pp. 351-383.

[1]       M. A. Reed and A. C. Seabaugh, “Prospects for semiconductor quantum devices,” Molecular and Biomolecular Electronics, ed. R, Birge, Adv. Chem. Ser. 240, pp. 15-42 (Amer. Chem. Soc. NY 1994).

3. Short Courses

[2]       A. Seabaugh, “Tunnel field-effect transistor - Engineering a better switch,” short course, Int. Electron Dev. Meeting, December 4, 2011, Washington, DC.

[1]       A. C. Seabaugh and P. Mazumder, “Nanoelectronic devices, circuits, and systems,” Government Microcircuits Applications Conference Short Course, Arlington, VA (1998).

4. Invited Papers and Presentations

[95]     A. Seabaugh, “Post CMOS device opportunities,” Government Microcircuits Applications and Critical Technology Conference (GOMAC), March 2012, Las Vegas, NV.

[94]     A. Seabaugh, S. Chae, P. Fay, T. Kosel, R. Li, Y. Lu, M. Qi, T. Vasen, M. Wistey, H. Xing, Q. Zhang, and G. Zhou, “Compound semiconductor tunnel transistors,” NNIN Symposium on Frontiers in Nanoscale Transistors and Electronics, Feb. 2012, Santa Barbara, CA.

[93]     A. Seabaugh, “Fulfilling digital logic requirements by tunnel transistors,” 2nd Symposium for Energy Efficient Electronic Systems, November 2011, Berkeley, CA.

[92]     A. Seabaugh, S. D. Chae, P. Fay, W. S. Hwang, T. Kosel, R. Li, Q. Liu, Y. Lu, T. Vasen, M. Wistey, H. Xing, G. Zhou, Q. Zhang, and R. Wallace, “Interface traps and low subthreshold swing in III-V tunnel FETs,” AVS 58th Annual International Symposium and Exhibition, October 30, 2011, Nashville, TN.

[91]     A. Seabaugh, S. D. Chae, P. Fay, W. S. Hwang, T. Kosel, R. Li, Q. Liu, Y. Lu, T. Vasen, M. Wistey, H. Xing, G. Zhou, and Q. Zhang, “III-V tunnel field-effect transistors,” 220th ECS Meeting and Electrochemical Energy Summit, October 9, 2011, Boston, MA.

[90]     A. Seabaugh, “Fundamentals and current status of steep-slope tunnel field-effect transistors,” 41st European Solid-State Device Research Conference (ESSDERC), September 2011, Helsinki, Finland.

[89]     A. Seabaugh, “Recent progress in the development of III-V and graphene tunnel field-effect transistors,” 7th International Nanotechnology Conference on Communication and Cooperation, May 16, 2011, Albany, NY.

[88]     A. Seabaugh, “III-V tunnel transistors,” Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD), February 21-23, 2011, Savannah, GA.

[87]     A. Seabaugh, “Tunnel FET gate-stack characterization,” Int. Symp. Adv. Gate Stack Technology, Troy, NY, October 1, 2010.

[86]     A. Seabaugh, “Emerging energy-efficient device technologies vs. ultimate CMOS,” University Governent Industry Micro-Nano Symp, UGIM 2010, June 29, West Lafayette, IN.

[85]     A. Seabaugh, “Tunnel field-effect transistors – status and prospects,” 2010 Dev. Res. Conf. Dig. 2010, June 22, Notre Dame.

[84]     A. Seabaugh, “Narrow bandgap tunnel field-effect transistors for logic,” Proc. Int. Comp. Semicond. Symp. 2010, June 4, Takamatsu, Japan.

[83]     A. Seabaugh, “Tunnel transistors and SRAM,” Solid State Seminar, Department of Electronic and Computer Engineering, UC Berkeley, April 23, 2010.

[82]     A. Seabaugh, “Tunnel FETs,” Intel Components Research Seminar, Hillsboro, OR, March 24, 2010.

[81]     A. Seabaugh, “Tunnel Transistors and SRAM,” Intel, Hillsboro, OR, November 4, 2009.

[80]     A. Seabaugh, “Tunnel transistors and SRAM,” SEMATECH, Austin, TX, May 21, 2009.

[79]     A. Seabaugh, “Interband tunnel transistors,” Notre Dame Physics Colloquium, September 9, 2009.

[78]     A. Seabaugh, D. Jena, T. Fang, P. Fay, S. Kabeer, T. Kosel, Y. Lu, S. Koswatta, K. Tahy, T. Vasen, D. Wheeler, H. Xing, Q. Zhang, G. Zhou, J.-M. Kuo, P. Pinsukanjana, H. Zhu, and Y.-C. Kao, “Low-subthreshold-swing tunnel transistors,” Proc. Si Nanoelectronics Workshop 2009, Kyoto, June 13-14, 2009.

[77]     A. Seabaugh, “Lateral tunnel FETs,” DARPA STEEP meeting, San Francisco, December 11, 2008, San Francisco.

[76]     A. Seabaugh, “Nanoelectronics,” Trinity College, Dublin, Ireland, July 23, 2008.

[75]     A. Seabaugh, P. Fay, D. Jena, T. Kosel, T. Vasen, Q. Xang, and G. Xing, “Low-subthreshold-swing tunnel FETs and tunnel rectifiers,” Tyndall National Institute, Cork, Ireland, July 22, 2008.

[74]     A. Seabaugh, “Energy-efficient transistors,” University of Illinois (UIUC) ECE Colloquium, Urbana, Illinois, April 24, 2008.

[73]     A. Seabaugh, “Energy-efficient transistors,” Rochester Institute of Technology, Microelectronic Engineering Seminar, January 10, 2008.

[72]     A. Seabaugh, “Energy-efficient transistors,” Jozef Stefan Institute, Ljubljana, Slovenia, October 25, 2007.

[71]     A. Seabaugh, “Tunneling-based nanoelectronics for power reduction,” 7th Topical Workshop on Heterostructure Microelectronics, Kazusa Arc (Kazusa Akademia Center), Kisarazu, Chiba, Japan, August 21–24, 2007.

[70]     A. Seabaugh, “Complementary Tunnel Transistors vs. CMOS: Lowering Transistor Power Dissipation,” IEEE Electron Devices Society Dallas Section and University of Texas at Arlington Micro & Nano-Systems Distinguished Speaker Series, December 1, 2006.

[69]     A. Seabaugh, “Complementary low-subthreshold-swing tunnel transistors,” DARPA Defense Sciences Research Council Workshop on Emerging Technologies for Ultra-Low Power Dissipation Circuits, Arlington, VA, June 2, 2006.

[68]     A. Seabaugh, “Tunnel Diodes and Circuits,” at the Engineering Research Center for Wireless Integrated Microsystems, University of Michigan, Ann Arbor on May 16, 2006.

[67]     A. C. Seabaugh, Q. Liu, S. Sutar, Q. Zhang, W. Zhao, J. Zhao, Y. Yan, B. Wu, S. Kabeer, D. Wheeler, Z. Racz, and P. Fay, “High speed, low power, and mixed signal tunneling device technology,” Int. COE Workshop on Nano Processes and Devices, and their Applications, Nagoya, Japan, December 15-16, pp. 37-38, (2005).

[66]     A. C. Seabaugh and C. S. Lent “Fundamentals of Nanotechnology and Nanocomputing” in Nanocomputing - Technology Trends, ed. by K. S. Lakshminarayanan, U. Devi, R. B. Shankar, and T.V. Gopal, Allied Publishers Limited, Chennai, India (2001).

[65]     C. S. Lent, M. Lieberman, and A. C. Seabaugh, “Integrated Molecular Electronics” in Nanocomputing - Technology Trends, ed. by K. S. Lakshminarayanan, U. Devi, R. B. Shankar, and T.V. Gopal, Allied Publishers Limited, Chennai, India (2001).

[64]     A. Seabaugh, “Tunnel diodes and transistors,” at the Post-CMOS Deep Dive Workshop, IBM T. J. Watson Research Center, Yorktown Heights, NY, September 22, 2004.

[63]     A. Seabaugh, “Applications of Nanoelectronics,” Intel Corporation, Hillsboro, OR, May 19, 2004.

[62]     A. Seabaugh, “Silicon tunnel diodes and integrated circuits,” Sematech, Austin, TX, March 26, 2004.

[61]     A. Seabaugh, “Towards Autonomous Microsystems,” Zyvex Corporation, Richardson, TX, March 25, 2004.

[60]     A. Seabaugh, “Nanoelectronics - Evolutionary” at the National Nanotechnology Workshop on Grand Challenges in Nano-electronics, -Photonics, and -Magnetics in Arlington, VA on February 11, 2004.

[59]     A. Seabaugh, “Nanoelectronics in Autonomous Low-Power CMOS Systems” at the DARPA Workshop on the Integration of Scalable CMOS Systems with Novel Nanostructures in McLean, VA on January 12, 2004.

[58]     A. Seabaugh, “Emerging Technologies for Ambient Intelligence” at the Fifth International Workshop on Future Information Processing Technologies in Miyazaki, Japan on November 10, 2003.

[57]     A. Seabaugh, “Difference-defined nanofabrication” at the DARPA Workshop on Massively Reconfigurable Microfabrication Tools in Napa, California, October 29, 2003.

[56]     A. Seabaugh, NSF IGERT (Integrative Graduate Education and Research Trainingship) Lecture, “Nanotechnology: Devices, Agents, and Swarms” at the University of Michigan, Ann Arbor, Michigan, October 10, 2003.

[55]     A. Seabaugh, “Nanoelectromechanical Switches and Circuits,” to the Sensors Directorate of the Wright Patterson Air Force Base, February 6, 2003.

[54]     A. C. Seabaugh, “Multi-Valued Logic and the Esaki Tunnel Diode,” at the 11th Intenational Workshop on Post Binary Ultra Large Scale Integration (ULSI), University of Massachusetts, Boston, May 15, 2002.

[53]     A. C. Seabaugh, “Fundamentals of Nanotechnology and Nanocomputing” and “Integrated Molecular Electronics,” at the International Conference on Nanocomputing, SASTRA University, Thanjavur, India on December 16, 17, 2001.

[52]     A. Seabaugh, “Tunneling Device Nanoelectronics” Ohio State University, Columbus, OH, May 29, 2001.

[51]     A. Seabaugh, “Tunneling Device Nanoelectronics” Lund University, Sweden on May 1, 2001.

[50]     A. Seabaugh, “Tunnel Diodes for RF and Digital Applications” IEEE International Symposium Workshop on RF and and High Speed Applications of Tunnel Devices, Phoenix, Arizona, May 20, 2001.

[49]     A. C. Seabaugh, “Toward an integrated tunnel diode - promise and prospects,” Advanced Micro Devices, Inc., Sunnyvale, CA on December 14; Intel Corporation and the Oregon Graduate Institute, Hillsboro, OR, December 15, 2000.

[48]     A. C. Seabaugh, Z. Hu, Q. Liu, D. Rink, and J. Wang, “Silicon-based tunnel diodes and integrated circuits,” 4th International Workshop on Quantum Functional Devices, Kanazawa, Japan, November 15, 2000. pp. 5-8.

[46]     A. C. Seabaugh, “Tunnel Diode Integrated Circuits,” IEEE Int. Symp. Circ. Sys. Geneva, Switzerland, May 29-31, 2000, Proc. IEEE Int. Symp. Circ. Sys. (2000).

[45]     A. C. Seabaugh, “Resonant Tunneling Transistors,” Minneapolis, MN, March 20-24, 2000, Bul. Amer. Phys. Soc.

[44]     A. C. Seabaugh, “Promise of Tunnel Diode Integrated Circuits,” Si Tunnel Diode and CMOS/HBT Integration Workshop, December 9, 1999.

[43]     A. C. Seabaugh, “Integrated quantum devices: why bother?” Proc. 43rd Int. Conf. on Electron, Ion and Photon Beam Technology and Nanofabrication, San Marco Island, FL, June 2, 1999.

[42]     A. C. Seabaugh, “Tunneling-effect nanoelectronics,” 82nd Canadian Society for Chemistry Conf., Toronto, Canada, June 1, 1999.

[40]     A. C. Seabaugh and P. Mazumder, “Scanning the issue on quantum devices and their applications,” Proc. IEEE, April 1999.

[39]     A. C. Seabaugh, “Nanoelectronic devices, circuits, and systems,” Government Microcircuits Applications Conference Short Course, Arlington, VA, March 16, 1998.

[38]     A. Seabaugh, B. Brar, T. Broekaert, F. Morris, G. Frazier, X. Deng, and T. Blake “Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory,” San Francisco, Int. Electron Dev. Mtg., Dec. 6, 1998, pp. 429-432 (1998).

[37]     A. C. Seabaugh, B. Brar, T. Broekaert, F. Morris, and G. Frazier, “Resonant tunneling analog/mixed signal circuit technology,” Top. Workshop on Heterostructure Microelectronics for Information Systems Applications, Hayamachi, Japan, Aug. 20, 1998, pp. 14-15 (1998).

[36]     A. C. Seabaugh, R. Lake, B. Brar, R. Wallace, and G. Wilk, “Silicon-Based Quantum MOS Technology,” Government Microcircuit Applications 1998 Digest of Papers, pp. 377-380.

[35]     A. C. Seabaugh, “Beyond-the-Roadmap Technology: Silicon Heterojunctions, Optoelectronics, and Quantum Devices,” Mat. Res. Soc. 486, Materials and Devices for Silicon-Based Optoelectronics, ed. by. A. Polman, S. Coffa, and R. Soref, pp. 67-78 (1998), Mat. Res. Soc. Symp. Boston, Dec. 2, 1997.

[33]     A. C. Seabaugh, “Quantum meets LSI,” 3rd Int. Workshop on Quantum Functional Devices, Gaithersburg, Maryland, Nov. 5, 1997.

[32]     A. C. Seabaugh, B. Brar, T. Broekaert, G. Frazier, and P. van der Wagt, “Resonant tunneling circuit technology: has it arrived?” GaAs IC Symposium, Anaheim, California, Oct. 14, 1997, GaAs IC Symposium Technical Digest 1997, pp. 119-122.

[31]     J. Randall, G. Frazier, A. Seabaugh, and T. Broekaert, “The impact of nanoelectronics on integrated circuit technology,” (1996).

[30]     A. C. Seabaugh, “What happens after deep submicron CMOS,” NRC Canada Research Colloquium, Ottawa, Canada, May 13, 1996.

[29]     A. C. Seabaugh, T. P. E. Broekaert, and A. H. Taddiken, “Resonant tunneling and quantum integrated circuits (Invited),” 22nd Int. Symp. on Comp. Semicond., Cheju Island, Korea, Aug. 28-Sept. 2, 1995.

[28]     A. C. Seabaugh, “Resonant tunneling and quantum integrated circuits,” IEEE Cornell Conf. on Adv. Concepts in High Speed Semicond. Dev. and Circ., Ithaca, Aug. 7-9, 1995.

[27]     A. C. Seabaugh, C.-C. Cho, R. M. Steinhoff, T. S. Moise, K. H. Park, and Y. Okuno, “Silicon-based resonant tunneling,” 1995 Quantum Functional Devices Workshop, Matsue, Japan, May 22-25, 1995.

[26]     Y. C. Kao, and A. C. Seabaugh, “Artificially structured materials, riding electron waves,” TI Technical J. (1995).

[25]     A. C. Seabaugh, T. P. E. Broekaert, and A. H.. Taddiken, “Resonant tunneling and quantum integrated circuits,” 22nd Int. Symp. on Comp. Semicond., Cheju Korea, 1995.

[24]     A. C. Seabaugh, “Resonant Tunneling and Quantum Integrated Circuits,” Proc. IEEE Cornell Conf. on Adv. Concepts in High Speed Semicond. Dev. and Circ., 1995.

[23]     A. C. Seabaugh, C.-C. Cho, R. M. Steinhoff, T. S. Moise, K. H. Park, and Y. Okuno, “Silicon-based resonant tunneling,” Future Electron Devices J., (R&D Assoc. Future Electron Dev., Tokyo 1996) vol. 6, no. 3 pp. 34-36, in Japanese (1995).

[22]     R. M. Wallace, Y. Wei, S. Tang, and A. C. Seabaugh, “How much do we know about the Si/SiO₂ interface?” Proc. Texas Instruments 1995 Corporate R&D Technical Conference, (1995).

[21]     A. C. Seabaugh, “Resonant tunneling quantum devices and circuits,” Workshop on Physics and Computation, Dallas, TX, Nov. 17-20, 1994.

[20]     A. C. Seabaugh, “Resonant tunneling and quantum integrated circuits,” Eighth Int. Conf. on Molecular Beam Epitaxy, Osaka, Japan, Aug. 30, 1994.

[19]     A. C. Seabaugh, “Nanoelectronics,” Texas Instruments Marketing Technical Symposium, Houston, TX, March 21, 1994.

[18]     T. S. Moise, A. C. Seabaugh, A. H. Taddiken, J. H. Luscombe, Y. C. Kao, E. A. Beam III, and G. A. Frazier, “Resonant-Tunneling Transistors and Circuits,” 1994 Gov. Microcirc. Appl. Conf., 19th Dig. of Tech. Papers.

[17]     A. C. Seabaugh, “Nanoelectronics,” 1993 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, Oct. 4-5, 1993.

[16]     A. C. Seabaugh, A. H. Taddiken, E. A. Beam, and J. N. Randall, “Room temperature properties of III-V resonant tunneling devices and logic circuits,” International Workshop on Quantum Structures (QUEST), Santa Barbara, CA, March 15-16, 1993.

[15]     A. C. Seabaugh, “Resonant tunneling transistors,” Science and Technology Center Colloquium, Univ. of Texas at Austin, Feb. 8, 1993.

[14]     A. C. Seabaugh, “Resonant tunneling transistors,” Ultrafast Electronics and Optoelectronics Meeting, San Francisco, CA, January 25-27, 1993, OSA Ultrafast Electron. and Optoelec. 14., (Opt. Soc. Amer., Wash. DC 1993) pp. 65-70.

[13]     G. Frazier, A. Taddiken, A. Seabaugh, and J. Randall, “Nanoelectronic circuits using resonant tunneling transistors and diodes,” Dig. Tech. Papers Sol.-St. Circ. Conf. (IEEE no. 93CH3272-2 1993) pp. 174-175.

[12]     A. C. Seabaugh, “Quantum devices: teraflops or superflops” (rump session), 1992 Dev. Res. Conf., Boston, June 22-24, 1992.

[11]     A. Seabaugh, J. Luscombe, J. Randall, Y.-C. Kao, S. Bedair, P. Colter, “Atomic layer epitaxy of quantum-well devices,” 2nd Int. Symp. on Atomic Layer Epitaxy, Raleigh, NC, June 3-5, 1992.

[10]     A. Seabaugh, J. Luscombe, J. Randall, and G. Frazier, “Quantum functional devices based on resonant tunneling,” 1st Int. Workshop on Quantum Functional Devices, Nasu Kohgen, Japan, May 13-15, 1992.

[9]       A. C. Seabaugh (panelist), “Nanoelectronics as an alternative for gigascale integration,” IEEE Int. Solid State Circuits Conf., (with panel: D. Antoniadis (MIT), K. Izumi (NTT), G. Mahler (Univ. Stuttgart), J. Meindl (Rensselear Polytech.), T. Smith (IBM), and W. Beinvogl (Siemens)), San Francisco, Feb. 20, 1992.

[8]       A. C. Seabaugh, “Quantum functional devices: present status and future prospects,” MIT Heterostructure Device Seminar Series, Cambridge, MA, Dec. 2, 1991.

[7]       A. C. Seabaugh, “Transport and magnetotransport in the bipolar quantum-well resonant tunneling transistor,” Texas A&M Physics Colloquium, Nov. 13, 1991.

[6]       A. C. Seabaugh, “Quantum-effect transistors: future computing elements,” Texas Society of Telephone Engineers, Dallas, TX, May 23, 1991.

[5]       A. C. Seabaugh, J. H. Luscombe, and J. N. Randall, “Resonant-tunneling transistor logic,” Government Microcircuits Applications Conference, Technology Strategies of the 90s, Las Vegas, Nevada, November 6, 1990, 1990 Gov. Microcirc. Appl. Conf., 16th Dig. Tech. Papers, 11-14 (1990).

[4]       A. C. Seabaugh, “The quantum transistor: realizing useful devices near the dimensional limit,” MIDCON Electronic Show and Convention, Dallas, TX, September 13, 1990, Proc. MIDCON/90 Electronics Conf., 396-399 (1990).

[3]       A. C. Seabaugh, “Toward practical quantized electron devices,” seminar presented at Osaka Institute of Technology, Aug. 20, Institute of Industrial Science, University of Tokyo, August 27, Fujitsu Atsugi Laboratories, Aug. 28, Nippon Telephone and Telegraph, August 29, and the Sony Research Center, Hodogoya, Aug. 30, 1990.

[2]       A. C. Seabaugh, “Quantum-well resonant-tunneling transistors,” IEEE/Cornell Conference on High Speed Semiconductor Devices and Circuits, Ithaca, NY, Aug. 7-9, 1989.

[1]       A. C. Seabaugh, “Resonant tunneling transistors,” Research Colloquium, Texas Instruments, Houston, March 2, 1989.

5. Industry/Trade/Government Publications

[9]       “A tunnel vision for faster circuitry,” Wall Street J., p. 1, October 1, 1998.

[8]       T. Whitaker, “Tunnel diodes break through at last,” Comp. Semicon Spring I 36-41 (1998).

[7]       R&D News, “Quantum-well devices to overcome smallness barriers,” R&D Mag. pp. 1819, June 1991.

[6]       W. R. Frensley, M. A. Reed, A. C. Seabaugh, “Is resonant tunneling transistor a reality (letter),” Phys. Today, 43, 132 (1990).

[5]       A. C. Seabaugh, J. J. Mathias, and M. I. Bell, “Interactive FORTRAN program for computing selected electronic properties of GaAs and Si,” NIST Special Publication 400-85, May 1990.

[4]       J. N. Randall, J.H. Luscombe, M.A. Reed and A.C. Seabaugh, “Particle-in-a-box technology,” Australian Electronics Engineering, vol. 22, no. 12, 32-38 (1989).

[3]       M. Reed, A. Seabaugh, W. Frensley, R. Matyi, J. Randall, Y.-C. Kao, C.-H. Yang, H.L. Tsai, and D. Farrington, “Resonant tunneling transistors,” TI Tech. J. 6, 2948 (1989).

[2]       J. Randall, J. Luscombe, M. Reed, and A. Seabaugh, “Laterally quantized electron devices: particle-in-a-box technology,” TI Tech. J. 6, no. 4, 49-61 (1989

[1]       A. C. Seabaugh, W. R. Frensley, and R. J. Matyi, “Interpreting electrical measurements on III-V heterojunction device structures,” TI Tech. J. 5, no. 5, 111120 (1988).

6. Conference Proceedings

[151]   T. Vasen, G. Zhou, R. Li, Y. Lu, S. D. Chae, M. Qi, Q. Liu, Q. Zhang, T. Kosel, M. Wistey, H. Xing, P. Fay, and A. Seabaugh, “AlGaSb/InAs tunnel field-effect transistors,” poster, 8th International Nanotechnology Conference on Communication and Cooperation (INC8), May 2012, Tsukuba, Japan.

[150]   W. S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, H. Xing, A. Seabaugh, and D. Jena, “First demonstration of two-dimensional WS₂ transistors exhibiting 10⁵ room temperature modulation and ambipolar behavior,” submitted, Dev. Res. Conf., June 2012, University Park, PA.

[149]   G. Zhou, Y. Lu, S. Chae, R. Li, Q. Zhang, Q. Liu, T. Vasen, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, and H. Xing, “Vertical InGaAs/InP and InAs/Al_0.45Ga_0.55Sb tunnel FETs with tunneling normal to the gate,” submitted, TECHCON, Austin, TX, Sept. 2012.

[148]   Z. Jiang, Y. Lu, Y. Tan, Y. He, M. Povoloskyi, T. Kubis, G. Klimeck, A. Seabaugh, and P. Fay, “Atomistic simulation of GaSb/InAs tunneling field effect transistor,” submitted, TECHCON, Austin, TX, Sept. 2012.

[147]   D. Jena, W. S. Hwang, K. Tahy, P. Zhao, R. Myers-Ward, P. Campbell, C. Eddy, Jr., D. Gaskill, H. Xing, and A. Seabaugh, “Wafer-scale graphene nanoribbon transistor technology,” accepted, 221st ECS Meeting, Seattle Washington, May 2012.

[146]   W. S. Hwang, K. Tahy, P. Zhao, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy, Jr., D. K. Gaskill, H. Xing, A. C. Seabaugh, and D. Jena, “Wafer-scale graphene nanoribbons for tunnel FET applications,” 19th Korean Conference on Semiconductors, Feb. 2012, Seoul, Korea.

[145]   Q. Zhang, G. Zhou, H. Xing, A. Seabaugh, K. Xu, O. Kirillov, C. Richter, and N. Nguyen, “Band alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy,” International Semiconductor Device Research Symposium (ISDRS), Dec. 2011, College Park, MD.

[144]   S. D. Chae, G. Zhou, I. Kwihangana, R. Li, Y. Lu, Q. Liu, T. Vasen, Q. Zhang, W.-S. Hwang, P. Fay, T. Kosel, M. Wistey, H. Xing, and A. Seabaugh, “Characterization of interface traps in metal-highk-InAs/GaSb TFETs,” IEEE Semiconductor Interface Specialists Conference (SISC), Dec. 2011, Arlington, VA.

[143]   S. Fullerton-Shirey, B. Dey, and A. Seabaugh, “Improving conductivity in solid polymer electrolytes using oxide nanorods,” 220th ECS Meeting and Electrochemical Energy Summit, Oct. 2011, Boston, MA.

[142]   K. Tahy, W. S. Hwang, J. L. Tedesco, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy Jr., D. K. Gaskill, H. Xing, A. C. Seabaugh, and D. Jena, “Large scale fabrication of sub-10 nm graphene nanoribbon field effect transistors,” SRC TECHCON, Sept. 2011, Austin, TX.

[141]   T. Vasen, Q. Liu, M. S. Rahman, G. Zhou, Y. Lu, R. Li, C. Chen, Q. Zhang, N. Goel, C. Park, J.-M. Kuo, H. Zhu, S. Koswatta, D. Wheeler, P. Fay, H. Xing, T. Kosel, M. Wistey, and A. Seabaugh, “Lateral In_0.53Ga_0.47As tunneling field-effect transistor with regrown, self-aligned tunnel junction by molecular beam epitaxy,”SRC TECHCON, Sept. 2011, Austin, TX.

[140]   G. Zhou, Y. Lu, R. Li, Q. Zhang, W. Hwang, Q. Liu, T. Vasen, H. Zhu, J. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, and H. Xing, “Self-aligned InAs/Al_0.45Ga_0.55Sb vertical tunnel FETs,” Device Research Conf., pp. 205-206, June 2011, Santa Barbara, CA.

[139]   K. Tahy, W. S. Hwang, J. L. Tedesco, R. L. Ward, P. M. Campbell, C. R. Eddy, D. K. Gaskill, H. Xing, A. Seabaugh ,and D. Jena, “Sub-10 nm epitaxial graphene nanoribbon FETs,” Device Research Conf., pp. 39-40, June 2011, Santa Barbara, CA.

[138]   G. Zhou, Y. Lu, R. Li, W. Hwang, Q. Zhang, Q. Liu, T. Vasen, H. Zhu, J. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, and H. Xing,, “Passivation effects of ALD oxides on self-aligned In_0.53Ga_0.47As/InAs/InP vertical tunnel FETs,” Electronic Materials Conf., June 2011, Santa Barbara, CA.

[137]   W. S. Hwang, K. Tahy, J. L. Tedesco, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy Jr., D. K. Gaskill, H. Xing, A. C. Seabaugh, and D. Jena, “Fabrication of top-gated sub-10 nm epitaxial graphene nanoribbon FETs using hydrogen silsesquioxane (HSQ),” Electronic Mat. Conf., June 2011, Santa Barbara, CA.

[136]   R. Li, Y. Lu, G. Zhou, Q. Liu, C. Chen, M. S. Rahman, T. Vasen, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. Xing, S. Koswatta, and A. Seabaugh, “InAs/AlGaSb heterojunction tunnel FET with InAs airbridge drain,” International Symposium on Compound Semiconductors (ISCS2011), pp. 189-190, May 2011, Berlin, Germany.

[135]   G. Zhou, Y. Lu, R. Li, Q. Liu, P. Pinsukanjana, G. Wang, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. Xing, “Self-aligned In_0.53Ga_0.47As/InP vertical tunnel FET,” CS ManTech, May 2011, Palm Springs, CA.

[134]   K. Tahy, W. S. Hwang, J. L. Tedesco, R. L. Myers-Ward, P. M. Campbell, C. R. Eddy Jr., D. K. Gaskill, H. Xing, A. C. Seabaugh, and D. Jena, “Control of the unintentional doping in epitaxial graphene FETs,” Graphene 2011, April 2011, Bilbao, Spain.

[133]   D. Jena, K. Tahy, T. Fang, P. Zhao, W. S. Hwang, M. Kelly, S. Koswatta, K. Gaskill, R. L. Myers-Ward, J. Tedesco, C. Eddy, R. Li, H. Xing, and A. Seabaugh, “Graphene transistors for digital applications,” The Government Microcircuit Applications and Critical Technology Conference (GOMACTech), March 2011, Orlando, FL.

[132]   A. Seabaugh, “Narrow bandgap tunnel field-effect transistors for logic,” Proc. Int. Comp. Semicond. Symp. 2010, June 4, Takamatsu, Japan.

[131]   A. Seabaugh, “Tunnel field-effect transistors – status and prospects,” 2010 Dev. Res. Conf. Dig. 2010, June 22, Notre Dame.

[130]   D. Jena, K. Tahy, D. Shilling, Q. Zhang, T. Zimmermann, P. Fay, H. Xing, A. Seabaugh, R. Feenstra, and S. Koswatta, “Graphene Transistors,” GOMAC (2010) pp. 1-4

[129]   Y. Lu, A. Seabaugh, P. Fay, S. J. Koester, S. E. Laux, W. Haensch, and S. O. Koswatta, “Geometry dependent tunnel FET performance – dilemma of electrostatics vs. quantum confinement,” Dev. Res. Conf. 2010.

[128]   Y. Lu, A. Seabaugh, H. Xing, T. Kosel, S. Koswatta, H. Zhu, K. Clark, P. Pinsukanjana, J.-M. Kuo, Y.-C. Kao, and P. Fay, “Effect of Al composition on current-voltage characteristics of AlGaSb/InAs tunnel junction,” EMC 2010.

[127]   G. Zhou, H. Zhu, P. Pinsukanjana, T. Kosel, P. Fay, M. Wistey, A. Seabaugh, and H. Xing, “Regrown InGaAs tunnel junctions for TFETs,” EMC 2010.

[126]   D. Jena, K. Tahy, A. Konar, T. Fang, Q. Zhang, S. Koswatta, H. Xing, and A. Seabaugh, “Graphene based transistors,” 18th European Workshop on Heterostructure Technology (HETECH), November 2009.

[125]   D. Jena, K. Tahy, A. Konar, T. Fang, Q. Zhang, S. Koswatta, H. Xing, and A. Seabaugh, “Graphene electronics,” 8th Topical Workshop on Heterostructure Microelectronics (TWHM), August 2009.

[124]   A. Seabaugh, D. Jena, T. Fang, P. Fay, S. Kabeer, T. Kosel, Y. Lu, S. Koswatta, K. Tahy, T. Vasen, D. Wheeler, H. Xing, Q. Zhang, G. Zhou, J.-M. Kuo, P. Pinsukanjana, H. Zhu, and Y.-C. Kao, “Low-subthreshold-swing tunnel transistors,” Proc. Si Nanoelectronics Workshop 2009.

[123]   S. Kabeer, T. Vasen, D. Wheeler, Q. Zhang, S. Koswatta, H. Zhu, K. P. Clark, J. Kuo, Y.-C. Kao, S. Corcoran, B. Doyle, P. Fay, T. Kosel, H. Xing, and A. Seabaugh, “Effect of dopant profile on the current-voltage characteristics of p+n+ In_0.53Ga_0.47As tunnel junctions,” Int. Semicon. Dev. Res. Symp. (2009).

[122]   D. Wheeler, D. Kabeer, Y. Lu, T. Vasen, Q. Zhang, G. Zhou, K. P. Clark, H. Zhu, P. Fay, T. Kosel, H. Xing, and A. Seabaugh, “Fabrication approach for lateral InGaAs tunnel transistors,” Int. Semicon. Dev. Res. Symp. (2009).

[121]   G. Zhou, S. Kabeer, D. Wheeler, A. Seabaugh, and H. Xing, “Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs,” Int. Semicon. Dev. Res. Symp. (2009).

[120]   K. Karda, S. Sutar, J. Nahas, J. Brockman, and A. Seabaugh, “Bistable-body tunnel SRAM,” Proc. 2009 IEEE Int. Conf. Integrated Circ. Des. Technol.” May 18-20, Austin, TX, pp. 233-236.

[119]   D. Wheeler, L.-E. Wernersson, L. Fröberg, C. Thelander, A. Mikkelsen, K.-J. Weststrate, A. Sonnet, E. M. Vogel, A. Seabaugh, “Deposition of HfO₂ on InAs by atomic-layer deposition,” INFOS 2009, June 29 – July 1, 2009, Cambridge, UK.

[118]   A. Seabaugh, D. Jena, T. Fang, P. Fay, S. Kabeer, T. Kosel, Y. Lu, S. Koswatta, K. Tahy, T. Vasen, D. Wheeler, H. Xing, Q. Zhang, G. Zhou, J.-M. Kuo, P. Pinsukanjana, H. Zhu, and Y.-C. Kao, “Low-subthreshold-swing tunnel transistors,” Proc. Si Nanoelectronics Workshop 2009, Kyoto, June 13-14, 2009.

[117]   S. L. Rommel, D. Pawlik, P. Thomas, M. Barth, K. Johnson, S. K. Kurinec, A. Seabaugh, Z. Cheng, J. Z. Li, J. S. Park, J. M. Hydrick, J. Bai, M. Carroll, J. G. Fiorenza, A. Lochtefeld, “Record PVDR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping,” Int. Electron Dev. Meeting, pp. 1-4, Dec. 2008.

[116]   D. Wheeler, T. Kosel, A. Seabaugh, L. Fröberg, A. Mikkelsen, C. Thelander, K.-J. Weststrate, and L.-E. Wernersson, “High-κ-InAs MOS capacitors formed by atomic-layer deposition,” SRC TECHCON 2008, Nov. 3, 2008, Austin, TX.

[115]   Q. Zhang and A. Seabaugh, “Can the interband tunnel FET outperform Si CMOS?” 2008 Device Research Conf. Tech. Dig.

[114]   S. Sutar, Q. Zhang, and A. Seabaugh, “Structural sensitivity of interband tunnel diodes for SRAM,” 2008 Device Research Conf. Tech. Dig., pp. 65-66.

[113]   D. Wheeler, A. Seabaugh, L. Fröberg, C. Thelander, L.-E. Wernersson, “Electrical properties of HfO₂/InAs MOS capacitors,” Int. Semicon. Dev. Res. Symp., 2007, p. 391-2, University of Maryland.

[112]   B. Wu, D. Wheeler, C. Yi, I. Yoon, S. Jha, A. Brown, T. Kuech, P. Fay, A. Seabaugh, “InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs,” Int. Semicon. Dev. Res. Symp., 2007, p. 371-2, University of Maryland.

[111]   Q. Zhang S. Sutar, T. Kosel, and A. Seabaugh, “Rapid melt growth of Ge tunnel junctions for interband tunnel transistors,” Int. Semicon. Dev. Res. Symp., 2007, p. 485-6, University of Maryland.

[110]   D. Wheeler, B. Wu, P. Fay, A. Seabaugh, C. Yi, I. Yoon, A. Brown, and T. Kuech, “InAs-on-Silicon-on-insulator (SOI) Composite-Channel MOSFETs,” Semiconductor Research Corporation (SRC) Techcon 2007, September 10-12, 2007, Austin, Texas. 

[109]   P. Caroff, M. Jeppsson, D. Wheeler, M. Keplinger, B. Mandl, J. Stangl, A. Seabaugh, G. Bauer, and L.-E. Wernersson, “InAs film grown on Si(111) by metalorganic vapor phase epitaxy,” Int. Conf. Nano Sci. and Technol. (ICN+T 2007), Stockholm, Sweden.

[108]   A. Seabaugh, “Tunneling-based nanoelectronics for power reduction,” 7th Topical Workshop on Heterostructure Microelectronics, Kazusa Arc (Kazusa Akademia Center), Kisarazu, Chiba, Japan, August 21–24, 2007.

[107]   B. Wu, D. Wheeler, Q. Zhang, P. Fay, A. Seabaugh, C. Yi, I. Yoon, A. Brown, and T. Kuech, “Current-voltage measurements and photoconductance spectroscopy of ultrathin InAs grown on (211) Si,” Mat. Res. Soc. (2006).

[106]   W. Zhao, A. Seabaugh, B. Winstead, D. Jovanovic, and V. Adams, “Impact of uniaxial strain on the gate leakage currents of PD-SOI MOSFETs and ring oscillators with ultra-thin gate dielectric,” 2005 Device Research Conference, pp. 199-200.

[105]   Q. Zhang, W. Zhao, and A. Seabaugh, “Analytic expression and approach for low- subthreshold-swing tunnel transistors,” 2005 Device Research Conference, pp. 161-2.

[104]   A. C. Seabaugh, Q. Liu, S. Sutar, Q. Zhang, W. Zhao, J. Zhao, Y. Yan, B. Wu, S. Kabeer, D. Wheeler, Z. Racz, and P. Fay, “High speed, low power, and mixed signal tunneling device technology,” Int. COE Workshop on Nano Processes and Devices, and their Applications, Nagoya, Japan, December 15-16, pp. 37-38, (2005).

[103]   Y. Yan, J. Zhao, Q. Liu, W. Zhao, and A. Seabaugh, “Vertical tunnel diodes on high resistivity silicon,” 2004 Dev. Res. Conf. Digest, pp. 27-28.

[102]   Q. Liu, S. Sutar, and A. Seabaugh, “Tunnel diode/transistor differential comparator,” IEEE Lester Eastman Conference on High Perf. Devices Proceedings (2004).

[101]   L.-E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhao, Y. Yan, W. Seifert, and A. Seabaugh, “A combined UHV-CVD and rapid thermal diffusion process for SiGe Esaki diodes by ultra shallow junction formation,” Int. Semicond. Dev. Res. Conf. Proc. (2003) pp. 164-165.

[100]   Q. Liu and A. Seabaugh, “Unified physics-based ac model for the resonant tunneling diode,” 61st Device Research Conference Late News (2003).

[99]     Z. Racz, J. He, S. Srinivasan, W. Zhao, and A. Seabaugh, “Nanofabrication using nanotranslated stencil masks and lift-off,” 47th Int. Conf. on Electron, Ion, and Photon Beam Technology and Nanofabrication, pp. 175-176 (2003).

[98]     J. Wang, D. Wheeler, Y. Yan, J. Zhao, S. Howard, and A. Seabaugh, “Silicon tunnel diodes formed by proximity rapid thermal diffusion,” Proc. IEEE Lester Eastman Conference on High Performance Devices, pp. 393-401 (2002).

[97]     R. E. Belford, W. Zhao, J. Potashnik, Q. Liu, and A. Seabaugh, “Performance-augmented CMOS using back-end uniaxial strain,” 60th Device Research Conference Digest, IEEE catalog number 02TH8606, 41-42 (2002).

[96]     A. C. Seabaugh, “Multi-Valued Logic and the Esaki Tunnel Diode,” at the 11th Intenational Workshop on Post Binary Ultra Large Scale Integration (ULSI), University of Massachusetts, Boston, May 15, 2002.

[95]     B. D. Weaver, R. Magno, E. M. Jackson, R. Wilkins, S. Shojah-Ardalan, A. C. Seabaugh, B. Brar, M. O. Manasreh and Y. Berhane, “Disorder Effects in Reduced Dimensional and Quantum Electronics,” Space Technology Applications Int. Forum Proceedings (Albuquerque, NM, 11-14 Feb. 2001) p. 1210.

[94]     A. Seabaugh, “Tunnel Diodes for RF and Digital Applications” IEEE International Symposium Workshop on RF and and High Speed Applications of Tunnel Devices, Phoenix, Arizona, May 20, 2001.

[93]     A. C. Seabaugh and C. S. Lent “Fundamentals of Nanotechnology and Nanocomputing” in Nanocomputing - Technology Trends, ed. by K. S. Lakshminarayanan, U. Devi, R. B. Shankar, and T.V. Gopal, Allied Publishers Limited, Chennai, India (2001).

[92]     C. S. Lent, M. Lieberman, and A. C. Seabaugh, “Integrated Molecular Electronics” in Nanocomputing - Technology Trends, ed. by K. S. Lakshminarayanan, U. Devi, R. B. Shankar, and T.V. Gopal, Allied Publishers Limited, Chennai, India (2001).

[91]     P. E. Thompson, K. D. Hobart, M. E. Twigg, S. L. Rommel, N. Jin, P. R. Berger, R. Lake, A. C. Seabaugh, P. H. Chi, and D. S. Simons, “Epitaxial Si-Based Tunnel Diodes,” invited presentation at European Materials Research Symposium Spring Meeting in Strasbourg, France, May 2000.

[90]     A. C. Seabaugh, Z. Hu, Q. Liu, D. Rink, and J. Wang, “Silicon-based tunnel diodes and integrated circuits,” 4th International Workshop on Quantum Functional Devices, Kanazawa, Japan, November 15, 2000. pp. 5-8.

[89]     A. C. Seabaugh, “Tunnel Diode Integrated Circuits,” IEEE Int. Symp. Circ. Sys. Geneva, Switzerland, May 29-31, 2000, Proc. IEEE Int. Symp. Circ. Sys. (2000).

[88]     A. C. Seabaugh, “Resonant Tunneling Transistors,” Minneapolis, MN, March 20-24, 2000, Bul. Amer. Phys. Soc.

[87]     R. Wilkins, S. Shojah.-Ardalan, W. P. Kirk, G. F. Spencer, R. T. Bate, A. C. Seabaugh, R. Lake, P. Stelmaszyk, A. D. Wieck, and T. N. Fogarty, “Ionization and displacement damage irradiation studies of quantum devices: resonant tunneling diodes and two dimensional electron gas transistors,” Proc. NSREC (1999).

[86]     B. D. Weaver, E. M. Jackson, and A. C. Seabaugh, “H+ and He+ irradiation effects in InP-based resonant tunneling diodes,” Government Microcircuit Applications 1999 Digest of Papers, pp. 349-351.

[85]     P. Enquist, A. Seabaugh, D. H. Chow, Q.-Y. Tong, M. Simons, T. Broekaert, F. E. Reed, G. G. Fountain, M. Hamlett, E. Tangen, B. Brar, and F. Morris, “Symmetric intrinsic HBT/RTD technology for functionally dense, LSI 100 GHz circuits,” Government Microcircuit Applications 1999 Digest of Papers, pp. 210-213.

[84]     T. P. E. Broekaert, B. Brar, F. Morris, A. C. Seabaugh, and G. Frazier, “Resonant tunneling technology for mixed signal and digital circuits in the 10-100 GHz domain,” Proc. Ninth Great Lakes Symp. on VLSI, (1999).

[83]     A. C. Seabaugh, “Integrated quantum devices:  why bother?” Proc. 43rd Int. Conf. on Electron, Ion and Photon Beam Technology and Nanofabrication, San Marco Island, FL, June 2, 1999.

[82]     A. C. Seabaugh, “Tunneling-effect nanoelectronics,” 82nd Canadian Society for Chemistry Conf., Toronto, Canada, June 1, 1999.

[81]     S. L. Rommel, T. E. Dillon, P. R. Berger, R. Lake, P. E. Thompson, K. D. Hobart, A. C. Seabaugh, and D. Simons, “Si-based interband tunneling devices for high-speed logic and low power memory applications,” Int. Electron Dev. Mtg Technical Digest, pp.1035-1037 (1998).

[80]     B. Weaver, E. M. Jackson, and A. C. Seabaugh, “High radiation tolerance of InP-based resonant tunneling diodes,” Proceedings of Int. Conf. on Integrated Micro/Nanotech. for Space Applications, IAIR Publications (Nanospace ’98 Conference Proceedings, Nov. 1-6, 1998, Houston, TX).

[79]     W. P. Kirk, G. F. Spencer, R. T. Bate, R. Wilkins, S. Ardalan, T. Fogarty, A. C. Seabaugh, and A. D. Wieck, “Studies of radiation effects in quantum devices,” Int. Conf. on Integrated. Nano/Microtech. for Space Appl. (1998).

[78]     B. Brar, G. D. Wilk, and A. C. Seabaugh, “Electronic properties of an epitaxial SiOx/Si heterojunction,” IEEE Silicon Nanoelectronics Workshop Abstracts, pp. 47-48 1998.

[77]     B. Brar, T. Broekaert, G. Frazier, F. Morris, A. Seabaugh, P. van der Wagt, and E. Beam III, “Resonant tunneling technology for ultra-high-speed circuits,” Government Microcircuit Applications 1998 Digest of Papers, pp. 222-225.

[76]     B. Brar, T. Broekaert, G. Frazier, F. Morris, A. Seabaugh, P. van der Wagt, and E. Beam III, “High speed analog-to-digital converters based on resonant tunneling technology,” Government Microcircuit Applications 1998 Digest of Papers, pp. 230-233.

[75]     J. P. A. van der Wagt, A. C. Seabaugh, B. Brar, T. P. E. Broekaert, and E. A. Beam III, “Tunneling-Based Static Random Access Memory,” Government Microcircuit Appl. 1998 Digest of Papers, pp. 238-241.

[74]     B. Brar, P. van der Wagt, T. Broekaert, A. Seabaugh, G. Frazier, and E. Beam III, “Resonant tunneling diode circuits using epitaxial liftoff,” Government Microcircuit Applications 1998 Digest of Papers, pp. 381-384.

[73]     T. P. E. Broekaert, B. Brar, J. P. A. van der Wagt, A. C. Seabaugh, T. S. Moise, F. J. Morris, E. A. Beam III, and G. A. Frazier, “A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter,” GaAs IC Symposium Technical Digest 1997, pp. 187-190; IEEE J. Solid State Circ. 33, 1342-1349 (1998).

[72]     B. Brar, R. Steinhoff, A. Seabaugh, X. Zhou, S. Jiang, and W. P. Kirk, “Band offset measurement of the ZnS/Si (001) heterojunction,” 1997 IEEE Int. Symp. Comp. Semicond. (Inst. Phys. Publ.) pp. 167-170 (1998).

[71]     J. P. A. van der Wagt, A. C. Seabaugh, G. Klimeck, E. A. Beam III, T. B. Boykin, R. C. Bowen, and R. Lake, “Ultralow current density RTDs for tunneling-based SRAM,” 1997 IEEE Int. Symp. Comp. Semicond. (Inst. Phys. Publ.) pp. 601-604 (1998).

[70]     A. Seabaugh, B. Brar, T. Broekaert, F. Morris, G. Frazier, X. Deng, and T. Blake “Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory,” San Francisco, Int. Electron Dev. Mtg., Dec. 6, 1998, pp. 429-432 (1998).

[69]     A. C. Seabaugh, B. Brar, T. Broekaert, F. Morris, and G. Frazier, “Resonant tunneling analog/mixed signal circuit technology,” Top. Workshop on Heterostructure Microelectronics for Information Systems Applications, Hayamachi, Japan, Aug. 20, 1998, pp. 14-15 (1998).

[68]     A. C. Seabaugh, R. Lake, B. Brar, R. Wallace, and G. Wilk, “Silicon-Based Quantum MOS Technology,” Government Microcircuit Applications 1998 Digest of Papers, pp. 377-380.

[67]     G. Klimeck, D. Blanks, C. Bowen, B. Brar, T. Broekaert, G. Frazier, D. Jovanovic, R. Lake, T. Moise, A. Seabaugh, G. Wilk, and P. van der Wagt, “Design and Implementation of Resonant Tunneling Devices into Circuits and Applications,” Proceedings of PHASDOM 97, (1997).

[66]     R. Lake, B. Brar, G. D. Wilk, A. C. Seabaugh, and G. Klimeck, “Resonant tunneling in disordered systems such as SiO₂/Si/SiO₂,” 1997 IEEE Int. Symp. Comp. Semicond. (Inst. Phys. Publ.) pp. 617-620 (1998).

[65]     B. Brar, T. P. E. Broekaert, P. van der Wagt, A. C. Seabaugh, T. S. Moise, F. J. Morris, E. A. Beam III, and G. A. Frazier, “3 GHz resonant tunneling clocked comparator,” 1997 Proc. IEEE/Cornell Conf. on Adv. Concepts in High Speed Semicond. Dev. and Circ., pp. 28-34.

[64]     A. C. Seabaugh, “Beyond-the-Roadmap Technology: Silicon Heterojunctions, Optoelectronics, and Quantum Devices,” Mat. Res. Soc. 486, Materials and Devices for Silicon-Based Optoelectronics, ed. by. A. Polman, S. Coffa, and R. Soref, pp. 67-78 (1998), Mat. Res. Soc. Symp. Boston, Dec. 2, 1997.

[63]     A. C. Seabaugh, “Quantum meets LSI,” 3rd Int. Workshop on Quantum Functional Devices,” Gaithersburg, Maryland, Nov. 5, 1997.

[62]     A. C. Seabaugh, B. Brar, T. Broekaert, G. Frazier, and P. van der Wagt, “Resonant tunneling circuit technology: has it arrived?” GaAs IC Symposium, Anaheim, California, Oct. 14, 1997, GaAs IC Symposium Technical Digest 1997, pp. 119-122.

[61]     P. van der Wagt, A. Seabaugh, and E. Beam, III, “RTD/HFET low standby power memory cell,” 1996 Tech. Dig. IEDM,

[60]     T. P. E. Broekaert, J. N. Randall, E. A. Beam III, G. A. Frazier, D. Jovanovic, A. C. Seabaugh, and B. D. Smith, “Fabrication issues of lateral heterostructure resonant tunneling devices,” Conf. Proc. (1997).

[59]     Y. C. Kao, F. G. Celii, T. S. Moise, and A. C. Seabaugh, “Sensor-based MBE for strained AlAs/InGaAs/InAs multiple-RTD growth,” State-of-the-Art Program on Compound Semicon. XXIV Symp. (1996).

[58]     Y. Wei, R. M. Wallace, and A. Seabaugh, “Evolution of Si(100) surface morphology during thermal oxidation and post-oxidation annealing,” Bul. Amer. Phys. Soc. 41, No. 1, 186 (1996).

[57]     S. Tang, R. M. Wallace, A. Seabaugh, and D King-Smith, “Electronic structure of the ultrathin SiO₂/Si(100) interface: a first-principles study,” Bul. Amer. Phys. Soc. 41, No. 1, 206 (1996).

[56]     E. A. Beam, III, A. C. Seabaugh, H. F. Chau, W. Liu, and T. P. E. Broekaert, “Gas source molecular beam epitaxy of electronic devices,” Materials Research Society Proceedings (1996).

[55]     J. L. Huber, T. A. Kramer, M. A. Reed, T. S. Moise, Y.-C. Kao, A. C. Seabaugh, C. L. Fernando, and W. R. Frensley, “Resonant tunneling through a confined state in a tunneling hot electron transfer amplifier,” Proc. IEEE Cornell Conf. on Adv. Concepts in High Speed Semicond. Dev. and Circ., 1995.

[54]     K. P. Clark, R. T. Bate, W. P. Kirk, A. C. Seabaugh, and Y.-C. Kao, “Magneto-oscillations in the bipolar quantum-well resonant tunneling transistor,” Proc. IEEE Cornell Conf. on Adv. Concepts in High Speed Semicond. Dev. and Circ., 1995.

[53]     T. P. E. Broekaert, A. C. Seabaugh, J. Hellums, A. Taddiken, H. Tang, J. Teng, and P. van der Wagt, “Resonant tunneling analog-to-digital converter,” Proc. Int. Conf. on Integrated Micro/Nanotechnol. For Space App. (1995).

[52]     G. C. Wetsel, M. D. Taylor, S. E. McBride, and A. C. Seabaugh, “Nano-probe induced electrostatic lateral quantization in near-surface double-barrier heterostructures,” Bul. Amer. Phys. Soc., vol. 40, no. 1, 22 (1995).

[51]     K. P. Clark, W. P. Kirk, and A. C. Seabaugh, “Nonparabolicity effects on resonant tunneling involving triangular quantum-well quasi-bound states,” Bul. Amer. Phys. Soc., vol. 40, no. 1, 21 (1995).

[50]     T. A. Kramer, J. L. Huber, M. A. Reed, T. S. Moise, Y.-C. Kao, and A. C. Seabaugh, “Injection of ballistic electrons into virtual base states in a tunneling hot electron transfer amplifier,” Bul. Amer. Phys. Soc., vol. 40, no. 1, 254 (1995).

[49]     W. Wu, S. L. Skala, J. R. Tucker, and J. W. Lyding, “Interface characterization in an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy,” Proc. Amer. Vac. Soc. (1995)

[48]     A. C. Seabaugh, T. P. E. Broekaert, and A. H. Taddiken, “Resonant tunneling and quantum integrated circuits (Invited),” 22nd Int. Symp. on Comp. Semicond., Cheju Island, Korea, Aug. 28-Sept. 2, 1995.

[47]     A. C. Seabaugh, “Resonant tunneling and quantum integrated circuits,” IEEE Cornell Conf. on Adv. Concepts in High Speed Semicond. Dev. and Circ., Ithaca, Aug. 7-9, 1995.

[46]     A. C. Seabaugh, C.-C. Cho, R. M. Steinhoff, T. S. Moise, K. H. Park, and Y. Okuno, “Silicon-based resonant tunneling,” 1995 Quantum Functional Devices Workshop, Matsue, Japan, May 22-25, 1995.

[45]     Y. C. Kao, and A. C. Seabaugh, “Artificially structured materials, riding electron waves,” TI Technical J. (1995).

[44]     A. C. Seabaugh, T. P. E. Broekaert, and A. H.. Taddiken, “Resonant tunneling and quantum integrated circuits,” 22nd Int. Symp. on Comp. Semicond., Cheju Korea, 1995.

[43]     A. C. Seabaugh, “Resonant Tunneling and Quantum Integrated Circuits,” Proc. IEEE Cornell Conf. on Adv. Concepts in High Speed Semicond. Dev. and Circ., 1995.

[42]     A. C. Seabaugh, C.-C. Cho, R. M. Steinhoff, T. S. Moise, K. H. Park, and Y. Okuno, “Silicon-based resonant tunneling,” Future Electron Devices J., (R&D Assoc. Future Electron Dev., Tokyo 1996) vol. 6, no. 3 pp. 34-36, in Japanese (1995).

[41]     R. M. Wallace, Y. Wei, S. Tang, and A. C. Seabaugh, “How much do we know about the Si/SiO₂ interface?” Proc. Texas Instruments 1995 Corporate R&D Technical Conference, (1995).

[40]     K. P. Clark, W. P. Kirk, and A. C. Seabaugh, “Magneto-oscillations from a two-dimensional emitter in the bipolar quantum well resonant-tunneling transistor (BiQuaRTT),” Symp. Compound Semiconductors (1994).

[39]     K. P. Clark, W. P. Kirk, A. C. Seabaugh, “Magnetotransport characterization of the bipolar quantum resonant tunneling transistor,” Bul. Amer. Phys. Soc. (1994).

[38]     M. D. Taylor, S. E. McBride, G. C. Wetsel, and A. C. Seabaugh, “Scanned nanoprobe measurements of differential conductance oscillations in near-surface heterostructures,” Bul. Amer. Phys. Soc. (1994).

[37]     T. S. Moise, Y.-C. Kao, and A. C. Seabaugh, “Co-integration of resonant-tunneling and single-barrier hot-electron transistors operating at 300 K,” InP and Related Compounds (1994).

[36]     T. S. Moise, A. C. Seabaugh, A. H. Taddiken, J. H. Luscombe, Y. C. Kao, E. A. Beam III, and G. A. Frazier, “Resonant-Tunneling Transistors and Circuits,” 1994 Gov. Microcirc. Appl. Conf., 19th Dig. of Tech. Papers.

[35]     A. C. Seabaugh, “Resonant tunneling quantum devices and circuits,” Workshop on Physics and Computation, Dallas, TX, Nov. 17-20, 1994.

[34]     A. C. Seabaugh, “Resonant tunneling and quantum integrated circuits,” Eighth Int.Conf. on Molecular Beam Epitaxy, Osaka, Japan, Aug. 30, 1994.

[33]     A. C. Seabaugh, A. H. Taddiken, E. A. Beam III, J. N. Randall, Y.-C. Kao, and B. Newell, “Co-integrated resonant tunneling and heterojunction bipolar transistor full adder,” Int. Electron Dev. Meeting Tech. Dig. 419-422 (1993).

[32]     T. S. Moise, A. C. Seabaugh, E. A. Beam III, Y.-C. Kao, and J. N. Randall, “Room temperature operation of InGaAs-based hot-electron transistors,” 51st Dev. Res. Conf. Abst., IEEE Trans. Electron Dev. 40, p. 2134 (1993).

[31]     L. J. Micheel, A. H. Taddiken, and A. C. Seabaugh, “Multiple-valued logic computation circuits using micro- and nanoelectronic devices,” 23rd Int. Symp. on Mult. Val. Logic (IEEE Comp. Soc. Press, Los Alamitos, CA 1993) pp. 164-169.

[30]     G. C. Wetsel, Jr., S. E. McBride, M. J. Taylor, H. Marchman, A. C. Seabaugh, L. A. Files, Y.-C. Kao, J. N. Randall, and G. A. Frazier, “Observation of periodic conductance oscillations in the dI/dV characteristics of near-surface resonant tunneling nanostructures using a scanning nanoprobe instrument,” Bul. Amer. Phys. Soc. (1993).

[29]     A. C. Seabaugh, J. H. Luscombe, and J. N. Randall, “Quantum functional devices: present status and future prospects,” FED J. 3, suppl. 1, (R&D Assoc. Future Electron Dev., Tokyo 1993) pp. 920.

[28]     A. C. Seabaugh, J. H. Luscombe, and J. N. Randall, “Quantum functional devices: present status and future prospects,” FED J. 3, no. 1, (R&D Assoc. Future Electron Dev., Tokyo 1993) pp. 1629, in Japanese.

[27]     A. C. Seabaugh, “Resonant tunneling transistors,” Ultrafast Electronics and Optoelectronics Meeting, San Francisco, CA, January 25-27, 1993, OSA Ultrafast Electron. and Optoelec. 14., (Opt. Soc. Amer., Wash. DC 1993) pp. 65-70.

[26]     G. Frazier, A. Taddiken, A. Seabaugh, and J. Randall, “Nanoelectronic circuits using resonant tunneling transistors and diodes,” Dig. Tech. Papers Sol.-St. Circ. Conf. (IEEE no. 93CH3272-2 1993) pp. 174-175.

[25]     A. C. Seabaugh, “Nanoelectronics,” 1993 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, Oct. 4-5, 1993.

[24]     A. H. Taddiken, A. C. Seabaugh, G. A. Frazier, and J. N. Randall, “Application of resonant tunneling devices in future electronic circuits,” 1992 Gov. Microcirc. Appl. Conf., 18th Dig. of Tech. Papers, pp. 13-16.

[23]     A. Seabaugh, J. Luscombe, J. Randall, and G. Frazier, “Quantum functional devices based on resonant tunneling,” Abst. 1st Int. Workshop Quan. Func. Dev., (R&D Assoc. Future Electron Dev., Tokyo 1992) p. 70.

[22]     Y.-C. Kao, A. C. Seabaugh, and H.T. Yuan, “Vertical integration of structured resonant tunneling diodes on InP for multi-state memory applications,” 4th Int. Conf. Proc. InP and Rel. Mat. (IEEE catalog no. #92CH3104-7, 1992) pp. 489-492.

[22]     E. A. Beam III and A. C. Seabaugh, “The use of tertiarybutylphosphine and tertiaybutylarsine for metalorganic molecular beam epitaxy of resonant tunneling devices,” Mat. Res. Soc. Proc. (Mat. Res. Soc., Pittsburg, PA 1992) pp. 3338.

[21]     A. M. Bouchard, J. H. Luscombe, A. C. Seabaugh, and J. N. Randall, “Lateral resonant tunneling transistors: simulation, design, and experiment,” Nanostructures and Mesoscopic Systems, eds. W. P. Kirk and M. A. Reed, (Academic Press, NY 1992) pp. 393-401.

[20]     A. Seabaugh, J. Luscombe, J. Randall, Y.-C. Kao, S. Bedair, P. Colter, “Atomic layer epitaxy of quantum-well devices,” 2nd Int. Symp. on Atomic Layer Epitaxy, Raleigh, NC, June 3-5, 1992.

[19]     A. C. Seabaugh, Y.-C. Kao, and J. N. Randall, “Bipolar quantum-well resonant-tunneling transistors with room temperature multiple negative differential resistance characteristic,” Proc. 1991 Int. Semicon. Dev. Res. Symp., Charlottesville, Va., pp. 65-68.

[18]     A. C. Seabaugh, “Physics of the bipolar quantum-well resonant-tunneling transistor,” Texas Sec. Amer. Phys. Soc., Univ. North Texas, Denton, Bul. Amer. Phys. Soc. (1991).

[17]     M. J. Deen, A. Ng, Y. Zhu, A. C. Seabaugh, and O. Berolo, “Low frequency noise in double barrier resonant tunneling diodes,” 1991 Int. Conf. Noise in Phys. Sys. and 1/f Fluctuations (IOS Press, Amsterdam, Netherlands 1992) pp. 195-198.

[16]     A. C. Seabaugh, Y.-C. Kao, J. N. Randall, W. R. Frensley, and A. Khatibzadeh, “Resonant ionization in the base/collector junction of a bipolar tunneling transistor,” 48th Dev. Res. Conf. Abst., Santa Barbara (1990).

[15]     A. C. Seabaugh, Y.-C. Kao, J. N. Randall, W. R. Frensley, and A. Khatibzadeh, “Room temperature resonant-tunneling hot electron transistors with dc and microwave gain,” Ext. Abstr. 22nd Int. Conf. on Sol. St. Dev. and Mat., Part I, Sendai, 15-18 (1990).

[14]     A. C. Seabaugh, Y.-C. Kao, H.-Y. Liu, J. H. Luscombe, H.-L. Tsai, M. A. Reed, B. E. Gnade, and W. R. Frensley, “Characterization of unintentionally-ordered superlattice resonant-tunneling diodes,” Conf. Proc. 2nd Int. Conf. on InP and Rel. Mat., IEEE Catalog 90CH2859-7, 416-423 (1990).

[13]     M. A. Reed, A. C. Seabaugh, Y.-C. Kao, J. N. Randall, W. R. Frensley, and J. H. Luscombe, “Semiconductor resonant tunneling device physics and applications,” Mat. Res. Soc. Symp. Proc., 198, 309 (1990).

[12]     J. N. Randall,, M. A. Reed, J. H. Luscombe, G. F. Frazier, W. R. Frensley, A. C. Seabaugh, Y.C. Kao, T. M. Moore, and R. J. Matyi, “Advances in the processing of quantum coupled devices,” SPIE 1284, Nanostructures and Microstructures Correlation with Physical Properties of Semiconductors, 6674 (1990).

[11]     A. C. Seabaugh, J. H. Luscombe, and J. N. Randall, “Resonant-tunneling transistor logic,” Government Microcircuits Applications Conference, Technology Strategies of the 90s, Las Vegas, Nevada, November 6, 1990, 1990 Gov. Microcirc. Appl. Conf., 16th Dig. Tech. Papers, 11-14 (1990).

[10]     A. C. Seabaugh, “The quantum transistor: realizing useful devices near the dimensional limit,” MIDCON Electronic Show and Convention, Dallas, TX, September 13, 1990, Proc. MIDCON/90 Electronics Conf., 396-399 (1990).

[9]       A. C. Seabaugh, W. R. Frensley, Y.-C. Kao, J. N. Randall, and M. A. Reed, “Quantum-well resonant-tunneling transistors,” Proc. IEEE/Cornell Conf. Adv. Concepts High Speed Semicon. Dev. and Circ. (IEEE cat. no. 89CH2790-4, 1989) pp. 255-264.

[8]       A. C. Seabaugh, W. R. Frensley, M. A. Reed, J. N. Randall, and R. J. Matyi, “Experimental investigation of the bipolar resonant tunneling transistor,” Bul. Amer. Phys. Soc., vol. 34, no. 6, 1522 (1989).

[7]       Y. C. Kao, A. C. Seabaugh, H. Y. Liu, T. S. Kim, and M. A. Reed, “Improved MBE growth of InGaAs-InAlAs heterostructures for high performance device applications,” SPIE, 1144, InP and Rel. Mat. for Adv. Electron. and Optoelec. Dev., 30-38 (1989).

[6]       A. C. Seabaugh, M. A. Reed, W. R. Frensley, J. N. Randall, and R. J. Matyi, “Realization of pseudomorphic and superlattice bipolar resonant tunneling transistors,” Tech. Dig. Int. Electron Dev. Meeting, San Francisco, pp. 900- 902 (1988).

[5]       M. A. Reed, W. M. Duncan, W. R. Frensley, R. J. Matyi, A. C. Seabaugh, and H. L. Tsai, “Quantitative resonant tunneling spectroscopy: current-voltage characteristics of precisely characterized RTDs,” Inst. Phys. Conf. Ser. No. 96, Int. Symp. GaAs Rel. Comp., Atlanta, Georgia, pp. 587-592 (1988).

[4]       P. Pollak-Dingles, G. Burdge, C. H. Lee, A. C. Seabaugh, R. Brundage, and M. I. Bell, “Investigation of photoconductive picosecond microstripline switches on self-implanted SOS,” Proc. SPIE, Reno (1986).

[3]       A. C. Seabaugh, M. I. Bell, R. D. Larrabee, and J. D. Oliver, Jr., “High-frequency transient resistance spectroscopy of deep levels in semi-insulating GaAs,” Semi-Insulating III-V Mat., Kah-nee-ta, eds. D. C. Look and J.S. Blakemore (Shiva Pub. Ltd., Cheshire, UK 1984) pp. 437-445.

[2]       K. P. Pande and A. C. Seabaugh, “Preparation of device quality GaAs using plasma-enhanced MOCVD technique,” Proc. III-V Opto-Electron. Epi.& Dev. Rel. Proc. Symp. (Electrochem. Soc. Press 1983) pp. 201-210.

[1]       A. C. Seabaugh and R. J. Mattauch, “Controlled in situ etchback for LPE GaAs,” IEEE Proc. Southeastcon ’79, 287-291 (1979).

7. Theses

[3]       A. C. Seabaugh, “Transient photoresistance spectroscopy of deep levels in semiconductors,” Ph.D. Thesis, Univ. of Va., Charlottesville, (Univ. Microfilms, Ann Arbor, MI 1985).

[2]       A. C. Seabaugh, “Liquid phase epitaxy for millimeter wave mixer diodes,” M. S. Thesis, Univ. of Va., Charlottesville, 1979

[1]       A. C. Seabaugh, “The Experimistor,” B. S. Thesis, Univ. of Va., Charlottesville, 1977.

8. U. S. Patents

[22]     G. A. Frazier and A. C. Seabaugh, “Nanomechanical switches and circuits,” U. S. pat. number 6,548,841, 15 April 2003.

[21]     G. A. Frazier and A. C. Seabaugh, “Nanomechanical switches and circuits,” U. S. pat. number 6,534,839, 18 March 2003.

[20]     G. A. Frazier and A. C. Seabaugh, “Nanomechanical switches and circuits,” U. S. pat. number 6,495,905, 17 December 2002.

[19]     A. C. Seabaugh, “Hot carrier transistors utilizing quantum well injector for high current gain,” U. S. pat. number 6,201,258 B1, 13 March 2001.

[18]     A. C. Seabaugh, Y.-C. Kao, A. J. Purdes, and J. N. Randall, “Method of forming lateral resonant tunneling devices,” U. S. pat. number 6,139,483, 31 October 2000.

[17]     H.-T. Yuan and A. C. Seabaugh, “Multiple peak resonant tunneling diode,” U. S. pat. number 5,981,969, 9 November 1999.

[16]     A. C. Seabaugh, “Silicon resonant tunneling,” U. S. pat. number 5,796,119, 18 August 1998.

[15]     A. C. Seabaugh, “Bipolar resonant tunneling transistor frequency multiplier,” U. S. pat. number 5,767,526, 16 June 1998.

[14]     A. C. Seabaugh and C.-C. Cho, “Mixed barrier resonant tunneling,” U. S. pat. number 5,723,872, 3 March 1998.

[13]     A. C. Seabaugh and G. A. Frazier, “Magnetic field sensor using heterojunction bipolar transistors,” U. S. pat. number 5,680,280, 21 October 1997.

[12]     R. M. Wallace and A. C. Seabaugh, “Silicon oxide resonant tunneling diode structure,” U. S. pat. number 5,606,177, 25 February 1997.

[11]     G. A. Frazier and A. C. Seabaugh, “Multi-function resonant tunneling logic gate and method of performing binary and multi-valued logic,” U. S. pat. number 5,563,530, 8 October 1996.

[10]     A. C. Seabaugh, “Resonant tunneling transistor noise generator,” U. S. pat. number 5,554,860, 10 September 1996.

[9]       E. A. Beam III and A. C. Seabaugh, “Integrated field effect transistor and resonant-tunneling-diode,” U. S. pat. number 5,534,714, 9 July 1996.

[8]       A. C. Seabaugh, C. H. Mikkelson, and G. A. Frazier, “Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications,” U. S. pat. number 5,512,764, 30 April 1996.

[7]       A. C. Seabaugh and H. H. Hosack, “Method of forming implanted silicon resonant tunneling barriers,” U. S. pat. number 5,422,305, 6 June 1995.

[6]       E. A. Beam III and A. C. Seabaugh, “Method of making an integrated field effect transistor and resonant-tunneling-diode,” U. S. pat. number 5,416,040, 16 May 1995.

[5]       Y.-C. Kao, A. C. Seabaugh, H.-Y. Liu, and J. H. Luscombe, “Rotation induced superlattice,” U. S. pat. number 5,415,128, 16 May 1995.

[4]       A. C. Seabaugh, “Lateral resonant tunneling transistor with heterojunction barriers,” U. S. pat. number 5,408,106, 18 April 1995.

[3]       A. C. Seabaugh, “Method for fabricating lateral resonant tunneling transistor with heterojunction barriers,” U. S. pat. number 5,234,848, 10 August 1993.

[2]       A. C. Seabaugh, “Integration of lateral and vertical quantum-well transistors in the same epitaxial stack,” U. S. pat. number 5,179,037, 12 January 1993.

[1]       A. C. Seabaugh and R. J. Mattauch, “Controlled in situ etchback,” U. S. pat. number 4,373,989, 15 February 1983.

9. Foreign Patents

[10]     I. Obeid, A. C. Seabaugh, A. H. Taddiken, “Improvements in or relating to electrical circuits” European appl.. number 96116660.0-2214 [TI-21425] 8/24/95.

[9]       A. C. Seabaugh, “Silicon-based resonant tunneling diode implantation fabrication method,” Japanese pat. number 8,046,222, 16 February 1996.

[8]       A. C. Seabaugh, “Silicon -based resonant tunneling diode,” Japanese pat. number 8,018,029, 19 January 1996.

[7]       T. P. E. Broekaert, A. C. Seabaugh, and C.-C. Cho, “Resonant tunneling devices having tunnel barriers made of two different materials e.g. CaF₂ and silica,” European pat. number 697,741, [TI 19628,19629] 21 February 1996.

[6]       A. C. Seabaugh and H. H. Hosack, “Silicon-based resonant tunneling diode,” European pat. number 651,447, [TI 18681] 3 May 1995.

[5]       G. A. Frazier and A. C. Seabaugh, “Multi-function resonant tunneling logic for arithmetic calculations,” Japanese pat. number 7,007,416 [TI-16931] 10 January 1995.

[4]       G. A. Frazier and A. C. Seabaugh, “Multi-function resonant tunneling logic for arithmetic calculations,” European pat. number 596,691 [TI-16931] 11 May 1994.

[3]       A. C. Seabaugh, “Lateral resonant tunneling transistor with heterojunction barriers,” Japanese pat. number. 5251713, 28 September 1993.

[2]       Y.-C. Kao, A. C. Seabaugh, H.-Y. Liu, and J. H. Luscombe, “Rotation-induced superlattice,” Japanese pat. number 5,114,768 [TI-15221] 7 May 1993.

[1]       Y.-C. Kao, A. C. Seabaugh, H.-Y. Liu, and J. H. Luscombe, “Method of forming a rotation-induced superlattice structure and superlattice structure,” European pat. number 508,463 [TI-15221] 14 October 1992.

10. Provisional Patent Filing

[1]       K. Karda, J. Brockman, A. Seabaugh, “Bistable-body tunnel SRAM,” (2009).

[2]       Q. Liu and A. C. Seabaugh, “Method for self-aligned source metallization in tunnel field-effect transistors to reduce source resistance,” Docket 11-004, provisional sent August 9, 2010.

[3]       A. C. Seabaugh, P. Fay, H. Xing, Y. Lu, G. Zhou, M. Wistey, S. Koswatta, “Method for fabrication of low subthreshold swing vertical tunnel field-effect transistors,” Docket 11-005, provisional sent August 9, 2010.