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News
Qin Zhang's paper entitled "Graphene nanoribbon
tunnel transistors" was the top paper accessed in IEEE Electron Device
Letters. A second paper by Qin, "Low-subthreshold-swing tunnel transistors," also
made the IEEE EDL top-5 list (Dec. 2008).
Dr. Siyu Koswatta comes to Notre Dame, serving as the
IBM assignee to MIND. His work focuses on the design, modeling and simulation
of low-power devices (Dec. 2008).
Qin Zhang and Surajit Sutar show by
simulation that the Ge interband tunnel diodes can reduce power by 2x
relative to 45 nm MOSFET technology. Fabricated epitaxial junctions using
rapid melt growth techniques show substantial junction nonuniformity using
Al as the carrier metal. (Solid State Electronics, Nov. 2008)
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