Group News

Qin Zhang's paper entitled "Graphene nanoribbon tunnel transistors" was the top paper accessed in IEEE Electron Device Letters. A second paper by Qin, "Low-subthreshold-swing tunnel transistors," also made the IEEE EDL top-5 list (Dec. 2008).

Dr. Siyu Koswatta comes to Notre Dame, serving as the IBM assignee to MIND. His work focuses on the design, modeling and simulation of low-power devices (Dec. 2008).

Qin Zhang and Surajit Sutar show by simulation that the Ge interband tunnel diodes can reduce power by 2x relative to 45 nm MOSFET technology. Fabricated epitaxial junctions using rapid melt growth techniques show substantial junction nonuniformity using Al as the carrier metal. (Solid State Electronics, Nov. 2008)

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