Selected Publications:

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• Mark Wistey, Greg Burek, Uttam Singisetti, Austin Nelson, Brian Thibeault, Joël Cagnon, Susanne Stemmer, Arthur Gossard, Seth Bank, and Mark Rodwell, "Planarization and Regrowth of Self-Aligned Ohmic Contacts on InGaAs" Conference: 15th International Conference on Molecular Beam Epitaxy (MBE 2008), [PPT Slides]
• M.A. Wistey, Y.-Y. Fang, J. Tolle, A.V. Chizmeshya, and J. Kouvetakis, "Chemical routes to Ge/Si(100) structures for low temperature Si-based semiconductor applications." Applied Physics Letters, v. 90, pp. 082108 (2007).
• M.A. Wistey, S.R. Bank, H.P. Bae, H.B. Yuen, E.R. Pickett, L.L. Goddard and J.S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534nm," Electronics Letters, 2 March 2006, vol. 42, no. 5, pp. 282-283. [PDF reprint]
• M.A. Wistey, S.R. Bank, H.B. Yuen, J.S. Harris, M.M. Oye, and A.L. Holmes, Jr., "Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy," J. Vac. Sci. Technol. A, May/Jun 2005, vol. 23, no. 3. [PDF e-print]
• M.A. Wistey, S.R. Bank, H.B. Yuen, L.L. Goddard, and J.S. Harris, "Monolithic, GaInNAsSb VCSELs at 1460nm on GaAs by MBE," Electronics Letters, 11 Dec. 2003, vol. 39, no. 25, pp. 1822-1823. [PDF reprint]
• S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, and J.S. Harris, "Low-threshold CW GaInNAsSb/GaAs Laser at 1.49 μm," Electronics Letters, 2 Oct. 2003, vol. 39, no. 20, pp1445-6. [PDF reprint]

For reprints of other papers not listed here, please email me at the address at left.