Publications & Presentations
Papers:
2008
[56] Graphene nanoribbon tunnel
transistors
Qin Zhang, Tian Fang, Huili Xing, Alan Seabaugh and Debdeep Jena. IEEE Electron Dev. Lett.
29, 1344 (2008).
DOI:10.1109/LED.2008.2005650.
[55] Mobility
in semiconducting graphene nanoribbons:
Phonon, impurity, and edge roughness scattering
Tian Fang, Aniruddha Konar, Huili Xing and Debdeep Jena.
Physical Review B 78, 205403 (2008)
[54] Zener tunneling in semiconducting nanotube
and graphene nanoribbon p-n
junctions
Debdeep Jena, Tian Fang, Qin Zhang
and Huili
Grace Xing. Appl. Phys. Lett.,
93, 112106 (2008)
[53] Electrical
transport properties of wafer-fused p-GaAs/n-GaN heterojunctions
Chuanxin Lian, Huili Grace Xing, Yu-Chia
Chang, and Nick Fichtenbaum. Appl. Phys. Lett., 93, 112103, (2008)
[52] The role of
doping type in setback layers on wafer-fused AlGaAs/GaAs/GaN
HBTs Chuanxin Lian, Huili Grace Xing, Yu-Chia
Chang, and Nick Fichtenbaum. Phys. Solid. Stat. (c),
5(9), 2960 (2008)
[51] Wafer fused AlGaAs/GaAs/GaN
HBTs with current gain of ~ 20 and ft of ~ 2.6 GHz
Chuanxin Lian, Xiu Xing, Patrick Fay, Yu-Chia Chang, Zhen Chen and H. Xing. Conference digest of 66th
Device Research Conference, UCSB, June 2008.
[50] Current-carrying capacity of long &
short channel 2D graphene transistors
Xiangning Luo, YenChun Lee, Anirudda Konar, Tian Fang, Gregory Snider, H. Xing and Debdeep Jena. Conference digest of 66th
Device Research Conference, UCSB, June 2008.
[49] Ultrathin AlN/GaN superlattice p-n junctions by MBE
John Simon, Huili Xing and Debdeep Jena.Conference
digest of 66th Device Research Conference, UCSB, June
2008.
[48] AlN/GaN insulated gate HEMTs with
2.3 A/mm output current and 480 mS/mm
transconductance
Tom Zimmermann, David Deen, Yu Cao, John Simon, Patrick Fay, Debdeep
Jena and Huili
Grace Xing. IEEE EDL 29(7), 661, 2008.
[47] (Invited) “Ultrathin AlN/GaN heterostructure based HEMTs”
H. Xing, T.
Zimmermann, D. Deen, Y. Cao, D. Jena and P. Fay.
International Conference on Compound Semiconductor Manufacturing Technology (CS
ManTech), Chicago, (April 2008)
[46] Wafer fused AlGaAs/GaAs/GaN HBTs with current
gain ~ 20 and VBR > 35 V,
Chuanxin Lian and Huili Grace Xing International Conference on Compound Semiconductor
Manufacturing Technology, Chicago, (April 2008)
[45] Photocurrent
polarization anisotropy of random nanowire network
Yanghai Yu, Vladimir Protasenko, Debdeep Jena, Huili Grace Xing and Masaru Kuno.
NanoLetters, 2008
Yu Cao, Alexei Orlov, Huili Grace Xing, and Debdeep
Jena. APL 92(15), 152112 (2008)
[43] 2.3 nm AlN/GaN high electron mobility transistors with insulated
gates
David Deen,
Tom Zimmermann, Yu Cao, Debdeep Jena and Huili Grace Xing.
Phys. Solid. Stat. (c), 5(6), 2047 (2008)
[42] Formation of ohmic contacts to ultra-thin channel AlN/GaN
HEMTs
Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena and Huili Grace Xing.
Phys. Solid. Stat. (c), 5(6), 2030 (2008)
[41] The role of setback
layers on the breakdown characteristics of AlGaAs/GaAs/GaN
HBTs
Chuanxin Lian and Huili Grace Xing.
Phys. Solid. Stat. (c), 5(6), 1989 (2008)
2007
[40] Carrier
statistics and quantum capacitance in Graphene sheets
and ribbons.
T. Fang, A. Konar, H. Xing,
& D. Jena. Appl. Phys. Lett., 91,
092109 (2007).
- Selected in the September
10th (2007) issue of Virtual
Journal of Nanoscale Science and Technology.
[39] (invited)
MBE-Grown
Ultra-shallow AlN/GaN HFET Technology.
H. Xing, D. Deen,
Y. Cao, T. Zimmerman, P.
Fay, & D. Jena. ECS Transactions, Vol. 11, - to
appear (2007).
A. Singh, X. Liu, G. Galantai, V. Protasenko, M. Kuno, H. Xing &
D. Jena. Nano. Lett., (2007).
[37] Gain
degradation mechanisms in wafer-fused AlGaAs/GaAs/GaN
HBTs.
Chuanxin Lian, Huili (Grace) Xing, Chad Wang, David Brown and Lee McCarthy, APL 90
063502 (2007)
Ronghui Zhou, Hsueh-Chia Chang,
Vladimir. Protasenko, Masaru Kuno,
Amol Kumar Singh, Debdeep
Jena and Huili (Grace) Xing, JAP 101, 073704 (2007)
[35] DC
characteristics of AlGaAs/GaAs/GaN HBTs formed by wafer fusion
Chuanxin Lian, Huili (Grace) Xing, Chad S. Wang, L. McCarthy and Dave Brown, EDL 28(1), 8, 2007
2006
[34] Hot
phonon in Si-doped GaN
J. Liberis,
M. Ramonas, O. Kiprijanavic,
A. Matulionis, N. Goel, J.
Simon, K. Wang, H. Xing and D. Jena,
APL 89, 202117, 2006
[33] Field-effect
transistors and photodetectors based on
solution-synthesized nanowires
A. Singh, A. Khandelwal, X. Li, H. Xing, M. Kuno,
and D. Jena, conference digest of DRC, 2006
[32] Polarization-induced
3-Dimensional electron slabs in graded AlGaN layers
J. Simon, A. Wang, H. Xing, D. Jena and S. Rajan, MRS Symposium Proceedings 0892, 2006
[31] Electron
mobility in graded AlGaN alloys
Siddharth Rajan, Steven P. DenBaars, Umesh K. Mishra, Huili (Grace) Xing
and Debdeep Jena, APL 88, 042103, 2006
J. Simon, A. Wang, H. Xing, D. Jena and S. Rajan, APL 88,
042109, 2006
Chuanxin Lian, Huili (Grace) Xing,
APL, 2006, 88(1): 022112
2005
Xing. H.,
S.P. DenBaars, and U. K. Mishra,
J. Appl. Phys. 2005, 97(5): 113703
2004
[27] Temperature
dependent I-V characteristics of AlGaN/GaN HBTs and GaN BJTs
Xing, H.,
U.K. Mishra, International Journal of High Speed
Electronics and Systems, 14 (3):
819-824, 2004
[26] High
voltage AlGaN/GaN heterojunction
transistors,
L.S McCarthy, N.Q. Zhang, H. Xing, B. Moran, S. DenBaars, U.K. Mishra,
International Journal of High Speed Electronics and Systems, 2004, 14(1): p.
225-43
[25] Selective dry etch of GaN over AlGaN in BCl3/SF6
mixtures
D. Buttari,
A. Chini, A. Chakraborty,
L. McCarthy, H. Xing, T. Palacios,
L. Shen, S. Keller, and U.K. Mishra,
International Journal of High Speed Electronics and Systems, 14(3): 132-7, 2004
Haijiang Yu, L. McCarthy,
H. Xing, L. Shen, S. Keller, S. DenBaars, J. Speck and U. K. Mishra,
APL 2004, 85(22): 5254
[23] Nonpolar a-plane p-type GaN and
p-n junction diodes
Arpan Chakraborty, H. Xing, M.D.
Craven, S. Keller, T. Mates, J.S Speck, S.P. DenBaars,
and U. K. Mishra, J. Appl. Phys. 2004 96(8): 4494-9.
[22] POLFET:
an AlGaN/GaN polarization-doped MESFET for microwave
power applications
Siddharth Rajan, Huili Xing, Steve BenBaars, Umesh K. Mishra, and Debdeep Jena, Appl. Phys. Lett. 2004, 84(9): p. 1591-3
[21] High
breakdown voltage AlGaN/GaN HEMTs
achieved by multiple field plates
Xing, H., Y. Dora, A. Chini, S. Heikman, S. Keller, and U.K. Mishra, IEEE Elect. Dev. Lett., 2004, 25(4): p. 161-3
2003
[20] Origin
of etch delay time in Cl2 dry etching of AlGaN/GaN
structures,
D. Buttari,
A. Chini, T. Palacios, R. Coffie,
L. Shen, H.
Xing, S. Heikman, L. McCarthy, A. Chakraborty, S. Keller, and U. K. Mishra,
Appl. Phys. Lett. 2003, 83(24): p.4779-81.
Xing, H., Chavarkar P., Keller, S.,
S.P. DenBaars, Mishra,
U.K., Elect. Dev. Lett.,
2003, 24(3): p. 141-3.
[18] n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at
550-750 C,
Sarah Estrada, Andrew Huntington, Andreas Stonas,
Huili Xing, Umesh Mishra, Steven DenBaars, Larry Coldren and
Evelyn Hu, Appl. Phys.
Lett., 2003, 83(3): p. 560-2.
[17] Wafer- fused AlGaAs/GaAs/GaN heterojunction bipolar transistor,
Sarah Estrada, Huili Xing, Andreas Stonas, Andrew Huntington,
Umesh Mishra, Steven DenBaars, Larry Coldren, and
Evelyn Hu, Appl. Phys.
Lett., 2003, 82(5):
p. 820-2.
[16] Explanation
of anomalous current gain observed in GaN based
bipolar transistors,
Xing, H., Jena, D., M.J. Rodwell, Mishra, U.K., IEEE Elect. Dev. Lett., 2003, 24(1): p. 4-6.
Xing, H.,
Green, D.S., Yu, H.J., Mates, T., Kozodoy, P.,
Keller, S., DenBaars, S.P., Mishra,
U.K., Jpn. J. of Appl. Phys., 2003, 42(1): p. 50-3.
2002
Debdeep Jena, Sten Heikman, Daniel Green, Dario Buttari,
Robert Coffie, Huili Xing, Stacia Keller, Steven DenBaars, James S. Speck, and Umesh
K. Mishra, Appl. Phys. Lett.,
2002, 81(23): p. 4395-7.
[13] Ultrashort hole capture time in Mg-doped GaN thin films,
Kung-Hsuan
Lin, Gia-Wei Chern, Shi-Wei
Chu, Chi-Kuang Sun, Huili Xing, Yulia Smorchkova,
Stacia Keller, Umesh Mishra, and Steven DenBaars, Appl. Phys. Lett.,
2002, 81(21): p. 3975-7.
[12] (Conference
paper) InAlAs/InGaAs/InP DHBTs
with polycrystalline InAs extrinsic emitter regrowth
Scott, D., H. Xing, S. Krishnan, M. Urgeaga, N. Parthasarathy, M. Rodwell, 60th Device Research Conference, Santa
Barbara, CA, USA, June 2002
[11] Systematic
characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs
Buttari, D., A. Chini, G. Meneghesso, E. Zanoni, P. Chavarkar, R. Coffie, N.Q. Zhang,
S. Heikman, L. Shen, H. Xing, C. Zheng,
and U.K. Mishra, , IEEE Electron Device Lett. (USA), 2002. 23(3): p. 118-20.
2001
[10] Gallium nitride based transistors,
Xing, H., S.
Keller, Y.F. Wu, L. McCarthy, I.P. Smorchkova, D. Buttari, R. Coffie, D.S. Green,
G. Parish, S. Heikman, L. Shen,
N. Zhang, J.J. Xu, B.P. Keller, S.P. DenBaars, and U.K. Mishra, J.
Phys., Condens. Matter.,
2001. 13(32): p. 7139-57.
[9] Effect of threading dislocations on AlGaN/GaN heterojunction bipolar
transistors,
McCarthy, L., I. Smorchkova, H. Xing,
P. Fini, S. Keller, J. Speck, S.P. DenBaars, M.J.W. Rodwell, and
U.K. Mishra, Appl. Phys. Lett.,
2001. 78(15): p. 2235-7.
[8]
GaN HBT: toward an RF device,
McCarthy, L.S., I.P. Smorchkova, Xing, H.,
P. Kozodoy, P. Fini, J.
Limb, D.L. Pulfrey, J.S. Speck, M.J.W. Rodwell, S.P. DenBaars, and U.K. Mishra, IEEE Trans. Electron Devices, 2001. 48(3): p. 543-51.
[7] (conference
paper - invited) Progress in gallium nitride-based bipolar
transistors,
Xing, H.,
Green, D.S., McCarthy, L., Smorchkova, I.P., Chavarkar, P., Mates, T., Keller, S., DenBaars,
S.P., Speck, J., and Mishra, U.K., BIPOLAR/BiCMOS Circuits and Technology Meeting, Minneapolis, MN,
USA, September 2001.
2000
[6] (conference
paper) High current gain GaN homojunction
bipolar transistors,
Xing, H., L.
McCarthy, S. Keller, S. P. DenBaars, U. K. Mishra, 27th Int. Symp.
on Compound Semi., Monterey, CA, USA, October 2000.
[5] High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage,
Limb, J.B., H. Xing, B. Moran, L. McCarthy, S.P. DenBaars, and U.K. Mishra, Appl.
Phys. Lett., 2000. 76(17): p. 2457-9.
[4] Heavy doping effects in Mg-doped GaN,
Kozodoy, P., X. Huili, S.P. DenBaars, U.K. Mishra, A. Saxler, R. Perrin, S. Elhamri, and W.C. Mitchel, J.
Appl. Phys., 2000. 87(4): p. 1832-5.
1999
[3] Polarization-enhanced Mg doping of AlGaN/GaN superlattices,
Kozodoy, P., Y.P. Smorchkova, M.
Hansen, X. Huili,
S.P. DenBaars, and U.K. Mishra,
Appl. Phys. Lett., 1999. 75(16): p. 2444-6.
[2] AlGaN/GaN HBTs using regrown emitter,
Limb, J.B., L. McCarthy, P.
Kozodoy, H.
Xing, J. Ibbetson, Y. Smorchkova,
S.P. DenBaars, and U.K. Mishra,
Electron. Lett., 1999. 35(19): p. 1671-3.
L. Zeng,
S.P. Guo, Y.Y. Luo, W. Lin,
M.C. Tamargo, H.
Xing and G.S. Cargill III, J. Vac. Sci. Technol. B 17(3) 1999: p.1255.
Presentations
[1] Xing, H., L. McCarthy,
S. Keller, S. P. DenBaars, and U. K. Mishra.
High current gain GaN
homojunction bipolar transistors,
27th International
symposium on compound semiconductor, Monterey, CA, USA (October 2000).
[2] Xing, H., Smorchkova, I.P., Mates, T., Keller, S., DenBaars, S.P., and Mishra, U.K
Redistribution of Mg into sequentially regrown GaN layers by metalorganic chemical vapor deposition,
43rd
Electronic Material Conference, Notre
Dame, IN, USA (June 2001).
[3] Xing, H., Green, D.S.,
McCarthy, L., Smorchkova, I.P., Chavarkar,
P., Mates, T., Keller, S., DenBaars, S.P., Speck, J.,
and Mishra, U.K.
Progress in gallium nitride-based bipolar
transistors,
BIPOLAR/BiCMOS Circuits and
Technology Meeting, Minneapolis, MN, USA (September 2001).
[4] Xing, H., Chavarkar, P., Keller, S., DenBaars, S.P., and Mishra, U.K.,
High
breakdown (>300V) AlGaN/ GaN
bipolar transistors,
28th International
symposium on compound semiconductor, Tokyo, Japan (October 2001).
[5] Xing, H.,
Chavarkar, P., Green, D.S., Jena, D., Keller, S., DenBaars, S.P., and Mishra, U.K.,
High voltage operation (> 470 V) of AlGaN/GaN heterojunction bipolar
transistors,
International workshop on nitride semiconductors, Aachen, Germany
(July 2002).
[6] Xing, H., and U. K. Mishra
Comprehensive
characterization of GaN-based bipolar transistors,
APS
March Meeting, Austin, USA (March 2003).
[7] Xing, H., and U. K. Mishra
Comprehensive
characterization of GaN-based bipolar transistors,
International
Conference on Nitride Semiconductors, Nara, Japan (2003)
[8] Xing, H.,
and U.K. Mishra,
Temperature
dependent I-V characteristics of AlGaN/GaN HBTs and GaN BJTs,
Lester
Eastman Conference, Troy, NY, USA (August 2004).
[9] J. Simon, D. Jena,
A. Chakraborty, H.
Xing, and U. K. Mishra
“Non-Polar
GaN: p-type doping and Ohmic
contact technology.”
46th
Electronic Materials Conference (EMC), Notre Dame (June 2004)
[10] D. Jena, H. Xing, S. Rajan, J. Speck, U. Mishra, A.
Link, and O. Ambacher
“Polarization-induced
electron gases at abrupt and graded III-V nitride heterointerfaces.”
Physics
and Chemistry of Surfaces and Interfaces (PCSI-32), Bozeman (January 2005).
[11] Chuanxin Lian, and Huili Xing
Surface potential measurements on Ni-(Al)GaN lateral Schottky junction
using scanning Kelvin probe microscopy.
47th Electronic Materials Conference, Santa Barbara,
CA, USA (June 2005).
[12] Huili Xing, and Chuanxin Lian.
AlGaAs/GaAs/GaN heterojunction
bipolar transistors by wafer fusion,
ONR/MURI (reviews - once every six months since),
Santa Barbara, CA, USA (June 2005-).
[13] John Simon, Siddharth Rajan, Kejia Wang, Huili Xing, and Debdeep
Jena.
Polarization-induced
3-dimensional electron slabs in graded AlGaN layers,
Material
Research Society Fall Meeting, Boston, USA (Nov. 2005).
[14] A. Singh, A. Khandelwal, X. Li, H.
Xing, M. Kuno, D. Jena,
“Field-effect Transistors and Photodetectors Based on Solution-Synthesized Nanowires”,
64th
Device Research Conference, Pennsylvania State University, PA, USA (June 2006).
[15] H. Xing, X. Li, A. Singh, M. Kuno and D.
Jena.
“Photocurrent spectroscopy of
solution-synthesized nanowire-based photodetectors”,
48th
Electronic Materials Conference, Pennsylvania State University, PA, USA (June
2006).
[16] A. Singh, X. Li, V. Protasenko, M. Kuno, H.
Xing and D. Jena.
“Transport
properties of solution grown thin film nanowire
solids”.
48th
Electronic Materials Conference, Pennsylvania State University, PA, USA (June
2006).
[17] Huili Xing, and Chuanxin Lian
DC Characteristics of as-grown AlGaAs/GaAs HBTs and AlGaAs/GaAs /GaN HBTs by wafer fusion,
Lester
Eastman Conference, Ithaca, NY, USA (August 2006).
[18] A. Singh, A. Khandelwal, X. Li, H. Xing, M. Kuno,
and D. Jena
“Polarization-Sensitive
Photodetectors based on Electric-Field aligned Nanowires.”
Lester
Eastman Conference (LEC) 2006, Cornell University, USA (August 2006).
[19] Chuanxin Lian, and Huili Xing,
DC Characteristics of as-grown AlGaAs/GaAs HBTs and AlGaAs/GaAs /GaN HBTs by wafer fusion,
MRS
fall meeting, Boston, MA, USA (Nov. 2006)
[20] J. Simon, H. Xing, and
D. Jena
“Polarization-induced p-doping in N-Face
graded AlGaN/GaN p-n junctions.”
Materials
Research Society (MRS) Fall Meeting, Boston, USA (Nov-Dec 2006).
[21] Huili Grace Xing
Ultra-shallow
channel AlN/GaN HEMTs
Advanced
Heterojunction Workshop, Hawaii, USA (Dec. 2006).
[22]
D. Jena, Y. Cao, D. Deen, H. Xing
“Phonon-engineering in III-V Nitride HEMTs.”
Workshop on Compound Semiconductor Materials
and Devices (WOCSEMMAD) Savannah, GA, USA (Feb 2007).
[23] Chuanxin Lian
and Huili Grace Xing
“AlGaAs/GaAs/GaN HBTs by wafer
fusion”
Workshop
on Compound Semiconductor Materials and Devices (WOCSEMMAD) Savannah, GA, USA
(Feb 2007).
[24] A. Singh, D. Jena, V. Protasenko, M. Kuno, and H. Xing
“Polarization-sensitive
photodetectors based on solution-synthesized CdSe and CdTe quantumwire
solids.”
Materials
Research Society (MRS) Spring Meeting, San Francisco, (April 2007)
[25] D. Jena, A. Singh, V. Protasenko,
H. Xing,
& M. Kuno
“Electron transport
properties of solution-synthesized semiconducting quantum-wire solids.”
Materials
Research Society (MRS) Spring Meeting, San Francisco, (April 2007)
[26] Huili Grace Xing, D. Deen,
C. Yu, J. Simon, D. Jena, & P. Fay
“Ultra-shallow
channel AlN/GaN Heterojunction
FETs.”
Materials
Research Society (MRS) Spring Meeting, San Francisco, USA (April 2007)
[27] Rachel Thompson, Huili Grace Xing,
Gabor Galanti, Vladimir Protasenko,
Masaru Kuno, Ronghui Zhou, Chia Chang, Amol Singh, and Debdeep Jena.
Tunability of Dielectrophoretic
mobility of semiconductor nanowires and its
implications in device design
Materials
Research Society (MRS) Spring Meeting, San Francisco, USA (April 2007)
[28] A. Singh, M. Kuno, H. Xing,
& D. Jena
“Transport
properties and applications
of quantum-wire solids.”
Electronic
Materials Conference (EMC) 2007, Notre Dame, (June 2007)
[29] Rachel Thompson, Amol
Singh, James Puthussery, Aidong
Lan, Vladimir Protasenko, Masaru
Kuno, Debdeep Jena and Huili Grace Xing.
Solution-liquid-solid
synthesized CdS nanowires
aligned by dielectrophoresis for
polarization-sensitive photodetection.
Electronic
Materials Conference (EMC) 2007, Notre Dame, (June 2007)
[30] Chuanxin Lian, and Huili Xing,
Comparative study of as-grown AlGaAs/GaAs HBTs and wafer-fused AlGaAs/GaAs
/GaN HBTs,
Electronic Materials
Conference (EMC) 2007, Notre Dame, (June 2007)
[31] Chuanxin Lian, and Huili Xing,
The role of setback layers in wafer fused AlGaAs/GaAs /GaN HBTs,
International
Conference of Nitride Semiconductors (ICNS), Las Vegas, (Sept. 2007)
[32] David
Deen, Tom Zimmermann, Yu Cao, Debdeep
Jena, and Huili Grace Xing,
Ultra-shallow channel AlN/GaN
FETs for future high-speed and high transconductance applications,
International
Conference of Nitride Semiconductors (ICNS), Las Vegas, (Sept. 2007)
[33] Tom
Zimmermann, David Deen, Yu Cao, Debdeep
Jena, and Huili Grace Xing,
MBE grown AlInN and
AlInN/GaN FETs,
International
Conference of Nitride Semiconductors (ICNS), Las Vegas, (Sept. 2007)
[34] Debdeep Jena, Yu Cao, David Deen, Tom
Zimmermann, and Huili Grace Xing,
Ultrashallow all binary AlN/GaN
heterostructures for Ultrafast HEMTs,
International Symposium
of Compound Semiconductors (ISCS), Kyoto, (Oct. 2007)
[35] Huili Grace Xing, and Chuanxin Lian
AlGaAs/GaAs/GaN heterojunction bipolar transistors formed b wafer fusion,
International Symposium
of Compound Semiconductors (ISCS), Kyoto, (Oct. 2007)
[36] Huili
Grace Xing, Yu Cao, David
Deen, Tom Zimmermann, and Debdeep
Jena,
MBE grown ultrashallow
AlN/GaN HEMT technology,
212th
ECS (the electrochemical society) meeting, Washington DC, (Oct. 2007)
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Created on 7/12/2004 11:47 PM, last updated on 12/2/2008 4:14 AM