Wafer fusion enabled devices
Selective Papers:
* Electrical
transport properties of wafer-fused p-GaAs/n-GaN heterojunctions
Chuanxin Lian, Huili Grace Xing,
Yu-Chia Chang, and Nick Fichtenbaum.
Appl. Phys. Lett., 93,
112103, (2008)
* The role of
doping type in setback layers on wafer-fused AlGaAs/GaAs/GaN
HBTs
Chuanxin Lian, Huili Grace Xing,
Yu-Chia Chang, and Nick Fichtenbaum.
Phys. Solid. Stat. (c), 5(9), 2960 (2008)
* Wafer fused AlGaAs/GaAs/GaN HBTs with current
gain of ~ 20 and ft of ~ 2.6 GHz
Chuanxin Lian, Xiu Xing, Patrick Fay, Yu-Chia Chang, Zhen Chen and H. Xing. Conference
digest of 66th Device Research Conference, UCSB, June 2008.
* Wafer fused AlGaAs/GaAs/GaN HBTs with current
gain ~ 20 and VBR > 35 V,
Chuanxin Lian and Huili Grace Xing International Conference on Compound Semiconductor
Manufacturing Technology, Chicago, (April 2008)
* The role of setback
layers on the breakdown characteristics of AlGaAs/GaAs/GaN
HBTs
Chuanxin Lian and Huili Grace Xing. Phys. Solid. Stat. (c), 5(6), 1989
(2008)
* Gain
degradation mechanisms in wafer-fused AlGaAs/GaAs/GaN
HBTs.
Chuanxin Lian, Huili (Grace) Xing,
Chad Wang, David Brown and Lee McCarthy, APL 90 063502 (2007)
* DC
characteristics of AlGaAs/GaAs/GaN HBTs formed by wafer fusion
Chuanxin Lian, Huili (Grace) Xing, Chad S. Wang, L. McCarthy and Dave Brown, EDL 28(1), 8, 2007