Project: AlN/GaN high electron mobility transistors

Selected Papers:

* 4-nm AlN barrier all binary HFET with SiNx gate dielectric

Tom Zimmermann, Yu Cao, Paul Saunier, Debdeep Jena and Huili Grace Xing. International Journal of High Speed Electronics and Systems, accepted 2008.

* AlN/GaN insulated gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance

Tom Zimmermann, David Deen, Yu Cao, John Simon, Patrick Fay, Debdeep Jena and Huili Grace Xing. IEEE EDL 29(7), 661, 2008.

* (Invited) “Ultrathin AlN/GaN heterostructure based HEMTs”

H. Xing, T. Zimmermann, D. Deen, Y. Cao, D. Jena and P. Fay. International Conference on Compound Semiconductor Manufacturing Technology (CS ManTech), Chicago, (April 2008)

* Very low sheet resistance and Shubnikov-de-Haas oscillations in two dimensional electron gas at ultrathin binary AlN/GaN heterojunctions

Yu Cao, Alexei Orlov, Huili Grace Xing, and Debdeep Jena. APL 92(15), 152112 (2008)

* 2.3 nm AlN/GaN high electron mobility transistors with insulated gates

David Deen, Tom Zimmermann, Yu Cao, Debdeep Jena and Huili Grace Xing. Phys. Solid. Stat. (c), 5(6), 2047 (2008)

* Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs

Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena and Huili Grace Xing. Phys. Solid. Stat. (c), 5(6), 2030 (2008)

* (invited) MBE-Grown Ultra-shallow AlN/GaN HFET Technology.

H. Xing, D. Deen, Y. Cao, T. Zimmerman, P. Fay, & D. Jena. ECS Transactions, Vol. 11, - to appear (2007).

* Hot phonon in Si-doped GaN

J. Liberis, M. Ramonas, O. Kiprijanavic, A. Matulionis, N. Goel, J. Simon, K. Wang, H. Xing and D. Jena, APL 89, 202117, 2006

* Carrier transport and confinement in polarization-induced 3D electron slabs: importance of alloy scattering of AlGaN

J. Simon, A. Wang, H. Xing, D. Jena and S. Rajan, APL 88, 042109, 2006

* Dopant activation and ultra-low ohmic contacts on Si implanted GaN using 1500C/100bar N₂ rapid thermal annealing

Haijiang Yu, L. McCarthy, H. Xing, L. Shen, S. Keller, S. DenBaars, J. Speck and U. K. Mishra, APL 2004, 85(22): 5254

* POLFET: an AlGaN/GaN polarization-doped MESFET for microwave power applications

Siddharth Rajan, Huili Xing, Steve BenBaars, Umesh K. Mishra, and Debdeep Jena, Appl. Phys. Lett. 2004, 84(9): p. 1591-3

* High breakdown voltage AlGaN/GaN HEMTs achieved by multiple field plates

Xing, H., Y. Dora, A. Chini, S. Heikman, S. Keller, and U.K. Mishra, IEEE Elect. Dev. Lett., 2004, 25(4): p. 161-3

* Gallium nitride based transistors,

Xing, H., S. Keller, Y.F. Wu, L. McCarthy, I.P. Smorchkova, D. Buttari, R. Coffie, D.S. Green, G. Parish, S. Heikman, L. Shen, N. Zhang, J.J. Xu, B.P. Keller, S.P. DenBaars, and U.K. Mishra, J. Phys., Condens. Matter., 2001. 13(32): p. 7139-57.

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Created on 7/12/2004 11:47 PM, last updated on 12/2/2008 4:08 AM