The Molecular Beam Epitaxy (MBE) lab in the Notre Dame EE department comprises of a Veeco Gen 930 system configured for the growth of III-V Nitride semiconductor heterostructures.  Our fields of research encompass III-V Nitride semiconductor material growth, physics, and electronic and optical device applications.  We focus on the growth of low-dimensional heterostructures such as quantum wells and quantum dots.  The science and engineering we do is driven by device applications, which are carried out by various collaborations both within and outside the department.  The MBE research group is headed by Dr. Jena, whose personal interests are in engineering the extreme electronic polarization fields in Nitride nanostructures for novel device applications.  Through collaborations, the building blocks of such diverse state-of-the-art electronic and optical devices such as Field Effect Transistors (FETs), Resonant Tunneling Diodes (RTDs), Heterostructure Bipolar Transistors (HBTs), Quantum-Dot Photodetectors, Light-Emitting Diodes (LEDs) and Lasers are being built, atom by atom, right here in our laboratory.  It is a wonderful journey – you are invited to share the excitement.  We’ll see (blue) light at the end of the tunnel…