Journal Publications

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Publications

Books

2007

book_pic

Polarization Effects in Semiconductors: From Ab-Initio Theory to Device Applications

Springer, Dec 2007, ISBN 0387368310, edited by Colin Wood and Debdeep Jena. (Available from Amazon).

Journal Papers:

Get the preprints of selected papers from the arXivs.

2009

50) Polarization Induced Zener Tunnel Junctions in Wide Bandgap Heterostructures

(J. Simon, Z. Zhang, K. Goodman, H. Xing, T. Kosel, P. Fay & D. Jena

Phys. Rev. Lett., 103, 026801, 2009)

49) Hydrodynamic instability of confined two-dimensional electron flow in semiconductors

(W. R. C-Munoz, D. Jena, & M. Sen

J. Appl. Phys., 106, 014506, 2009)

48) A Theory for the High-Field Current Carrying Capacity of 1D Semiconductors

(D. Jena

J. Appl. Phys., 105, 123701, 2009)

47) Heat Transport Mechanisms in Superlattices

(Y. K. Koh, Y. Cao, D. Cahill, & D. Jena

Adv. Funct. Materials, 19, 610, 2009)

2008

46) Graphene Nanoribbon Tunnel Transistors

(Q. Zhang, T. Fang, A. Seabaugh, H. Xing, & D. Jena

IEEE Electron Device Lett., 29 (12), 1344, 2008)

45) Mobility in Semiconducting Graphene Nanoribbons: Phonon, Impurity, and Edge Roughness Scattering

(T. Fang, A. Konar, H. Xing, & D. Jena

Phys. Rev. B, 78, 205403, 2008)

44) GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy

(K. Goodman, K. Wang, X. Luo, J. Simon, T. Kosel, & D. Jena

Mater. Res. Soc. Symp. Proc. Vol. 1080, 1080-O08-04, 2008)

43) Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions

(D. Jena, T. Fang, Q. Zhang, & H. Xing

Appl. Phys. Lett., 93, 112106, 2008)

42) Stokes and anti-Stokes resonant Raman scattering from biased AlN/GaN heterostructures

(G. Xu, S. Tripathy, X. Mu, Y. Ding, K. Wang, Y. Cao, D. Jena & J. Khurgin

Appl. Phys. Lett., 93, 051912, 2008)

41) Isotope disorder of phonons in GaN and its beneficial effect in high power field effect transistors

(J. Khurgin, D. Jena & Y. Ding

Appl. Phys. Lett., 93, 032110, 2008)

40) AlN/GaN insulated gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance

(T. Zimmermann, D. Deen, Y. Cao, J. Simon, P. Fay, D. Jena, & H. Xing

IEEE Electron Device Lett., 29 (7) 661, 2008)

39) Effect of growth conditions on the conductivity of Mg doped p-type GaN by Molecular Beam Epitaxy

(J. Simon & D. Jena

Phys. Stat. Sol. A, 205 1074 2008)

38) Structural and transport properties of InN grown on GaN by MBE

(K. Wang, T. Kosel & D. Jena

Phys. Stat. Sol. C, 5 1811, 2008)

37) 2.3 nm barrier AlN/GaN HEMTs with insulated gates

(D. Deen, T. Zimmermann, Y. Cao, D. Jena, & H. Xing

Phys. Stat. Sol. C, 5 2047, 2008)

36) Electron transport properties of low sheet-resistance two-dimensional electron gases in ultrathin AlN/GaN heterojunctions grown by MBE

(Y. Cao, K. Wang & D. Jena

Phys. Stat. Sol. C, 5 1873, 2008)

35) Formation of Ohmic contacts to ultrathin AlN/GaN HEMTs

(T. Zimmermann, D. Deen, Y. Cao, D. Jena, & H. Xing

Phys. Stat. Sol. C, 5 2030, 2008)

34) Very Low Sheet Resistance and Shubnikov de-Haas Oscillations in Two-Dimensional Electron Gases at Ultrathin Binary AlN/GaN Heterojunctions

(Y. Cao, K. Wang, A. Orlov, H. Xing & D. Jena

Appl. Phys. Lett., 92, 152112, 2008)

33) Photocurrent Polarization Anisotropy of Randomly Oriented Nanowire Networks

(Y. Lu, V. Protasenko, D. Jena, H. Xing, & M. Kuno

Nano. Lett., 8, 1352, 2008)

32) Evidence of hot electrons generated from an AlN/GaN HEMT

(S. Tripathy, G. Xu, X. Mu, Y. Ding, K. Wang, Y. Cao, D. Jena, & J. Khurgin

Appl. Phys. Lett., 92, 013513, 2008)

2007

31) Hot phonon effect on electron velocity saturation in GaN: A second look

(J. Khurgin, Y. Ding, & D. Jena

Appl. Phys. Lett., 91, 252104, 2007)

30) Tailoring the carrier mobility in semiconductor nanowires by remote dielectrics

(A. Konar & D. Jena

J. Appl. Phys., 102, 123705, 2007)

29) Conduction band offset at the InN/GaN heterojunction

(K. Wang, C. Lian, N. Su, D. Jena, & J. Timler

Appl. Phys. Lett., 91, 232117, 2007)

28) MBE-grown Ultra-Shallow AlN/GaN HFET Technology

(H. Xing, D. Deen, Y. Cao, T. Zimmerman, P. Fay, & D. Jena

ECS Transactions, 11, 233, 2007)

27) Polarization-sensitive photodetectors based on solution-synthesized semiconductor nanowire-based quantum-wire solids

(A. Singh, X. Li, G. Galantai, V. Protasenko, M. Kuno, H. Xing, & D. Jena

Nano Lett., 7 (10), 2999, 2007)

26) Carrier Statistics and Quantum Capacitance in Graphene Sheets and Ribbons

(T. Fang, A. Konar, H. Xing & D. Jena

Appl. Phys. Lett., 91, 092109, 2007)

25) Hydrodynamic instability of one-dimensional electron flow in semiconductors

(W. R. C-Munoz, M. Sen & D. Jena

J. Appl. Phys., 102, 023703, 2007)

24) A High-Mobility Window for Two-Dimensional Electron Gases at Ultrathin AlN/GaN Heterojunctions

(Y. Cao & D. Jena

Appl. Phys. Lett., 90, 182112, 2007)

23) Resonant Terahertz generation from InN thin films

(X. Mu, Y. J. Ding, K. Wang, D. Jena & Y. B. Zotova

Opt. Lett., 32, 1432, 2007)

22) Polarization anisotropy, frequency dependent emission, and transport properties of dielectrophoretically aligned CdSe nanowire arrays

(R. Zhou, H.-C. Chang, V. Protasenko, M. Kuno, A. Singh, D. Jena, & H. Xing

J. Appl. Phys., 101, 073704, 2007)

21) Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering

(D. Jena & A. Konar

Phys. Rev. Lett., 98, 136805, 2007) [In the News – a) NanoTech, b) Also featured in the Virtual Journal of Nanoscale Science and Technology]

2006

20) Compositional modulation and optical emission in AlGaN epitaxial films

(M. Gao, S. Bradley, Y. Cao, D. Jena, Y. Lin, S. Ringel, H. Hwang, W. Schaff, & L. Brillson

J. Appl. Phys., 100, 103512, 2006)

19) Hot Phonons in Si-Doped GaN

(J. Liberis, M. Ramonas, O. Kiprijanovic, A. Matulionis, N. Goel, J. Simon, K. Wang, H. Xing, & D. Jena,

Appl. Phys. Lett., 89, 202117, 2006)

18) Effect of dislocation scattering on the transport properties of InN grown on GaN substrate by Molecular Beam Epitaxy

(K. Wang, Y. Cao, J. Simon, J. Zhang, A. Mintairov, J. Merz, D. Hall, T. Kosel, & D. Jena,

Appl. Phys. Lett., 89, 162110, 2006)

17) Optical study of hot-electron transport in GaN: Signatures of the hot-phonon effect

(K. Wang, J. Simon, N. Goel & D. Jena,

Appl. Phys. Lett., 88, 022103, 2006)

16) Carrier transport and confinement in polarization-induced 3-D electron slabs: Importance of alloy scattering

(J. Simon, K. Wang, H. Xing, D. Jena & S. Rajan,

Appl. Phys. Lett., 88, 042109, 2006)

15) Electron mobility in graded AlGaN alloys

(S. Rajan, S. DenBaars, U. Mishra, H. Xing. & D. Jena,

Appl. Phys. Lett., 88, 042103, 2006)

14) Ultrathin CdSe Nanowire FETs and their Optical Properties

(A. Khandelwal, D. Jena, J. Grebinski, K. Richter, and M. Kuno,

J. Electron. Mat., 35, 170, 2006)

2004

13) Spin scattering by dislocations in III-V Semiconductors

(D. Jena,

Phys. Rev. B 70, 245203, 2004) [Also featured in the Virtual Journal of Nanoscience and Technology, Dec 2004 issue.]

12) Dipole Scattering in highly polar semiconductor alloys

(W. Zhao and D. Jena,

J. Appl. Phys. 96, 2095, 2004)

11) AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

(Siddharth Rajan, Huili Xing, Steve DenBaars, Umesh K. Mishra, and D. Jena,

Appl. Phys. Lett., 84, 1591, 2004)

As a graduate student @ UC Santa Barbara (Fall 1998 - Spring 2003)

2003

10) Magnetotransport properties of a polarization-doped three-dimensional electron slab

(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,

Phys. Rev. B 67 153306, 2003)

9) Explanation of anomalously high b in GaN-based bipolar transistors

(H. Xing, D. Jena, M. J. W. Rodwell, and U. K. Mishra,

IEEE Elect. Dev. Lett. 24 4, 2003)

8) Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN

(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,

Phys. Stat. Sol. C, 0 2339, 2003)

2002

7) Quantum and classical scattering times due to charged dislocations in an impure electron gas

(D. Jena and U. K. Mishra,

Phys. Rev. B 66 241307, 2002)

6) Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

(D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, and I. P. Smorchkova,

Appl. Phys. Lett., 81 4395, 2002)

5) Effect of p-doped overlayer thickness on RF-dispersion in GaN JFETs

(A.Jimenez, D. Buttari, D. Jena, R. Coffie, S. Heikman, N. Q. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, and U.K. Mishra,

IEEE Elec. Device Letters, 23 306, 2002

4) Effect of scattering by strain fields surrounding edge dislocations on electron transport in 2DEGs

(D. Jena and U. K. Mishra,

Appl. Phys. Lett., 80 64, 2002 )

2001

3) Electron transport in III-V nitride 2DEGs

(D. Jena, I. Smorchkova, A. Gossard, U. K. Mishra,

Phys. Stat. Sol. B, 228 617, 2001)

2000

2) Dipole scattering in polarization induced two-dimensional electron gases

(D. Jena, A. C. Gossard, U. K. Mishra,

J. Appl. Phys., 88 4734, 2000)

1) Dislocation scattering in a two-dimensional electron gas

(D. Jena, A. C. Gossard, U. K. Mishra,

Appl. Phys. Lett., 76 1707, 2000)

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