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Publications
Books
2007

Polarization Effects in Semiconductors: From Ab-Initio Theory to Device Applications
Springer, Dec 2007, ISBN 0387368310, edited by Colin Wood and Debdeep Jena. (Available from Amazon).
Journal Papers:
Get the preprints of selected papers from the arXivs.
2009
50) Polarization Induced Zener Tunnel Junctions in Wide Bandgap Heterostructures
(J. Simon,
Z. Zhang, K. Goodman, H. Xing, T. Kosel, P. Fay & D.
Phys. Rev. Lett., 103, 026801, 2009)
49) Hydrodynamic instability of confined two-dimensional electron flow in semiconductors
(W. R. C-Munoz, D. Jena, & M. Sen
J. Appl. Phys., 106, 014506, 2009)
48) A Theory for the High-Field Current Carrying Capacity of 1D Semiconductors
(D.
J. Appl. Phys., 105, 123701, 2009)
47) Heat Transport Mechanisms in Superlattices
(Y. K. Koh,
Y. Cao, D. Cahill, & D.
Adv. Funct. Materials, 19, 610, 2009)
2008
46) Graphene Nanoribbon Tunnel Transistors
(Q. Zhang,
T. Fang, A. Seabaugh, H. Xing, & D.
IEEE Electron Device Lett., 29 (12), 1344, 2008)
45) Mobility
in Semiconducting Graphene Nanoribbons: Phonon, Impurity, and Edge Roughness
Scattering
(T. Fang,
A. Konar, H. Xing, & D.
Phys. Rev. B, 78, 205403, 2008)
44) GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy
(K.
Goodman, K. Wang, X. Luo, J. Simon, T. Kosel, & D.
Mater. Res. Soc. Symp. Proc. Vol. 1080, 1080-O08-04, 2008)
43) Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions
(D.
Appl. Phys. Lett., 93, 112106, 2008)
42) Stokes and anti-Stokes resonant Raman scattering from biased AlN/GaN heterostructures
(G. Xu, S. Tripathy, X. Mu, Y. Ding, K. Wang, Y. Cao, D. Jena & J. Khurgin
Appl. Phys. Lett., 93, 051912, 2008)
41) Isotope disorder of phonons in GaN and its beneficial effect in high power field effect transistors
(J.
Khurgin, D.
Appl. Phys. Lett., 93, 032110, 2008)
40) AlN/GaN
insulated gate HEMTs with 2.3 A/mm output current and 480 mS/mm
transconductance
(T.
Zimmermann, D. Deen, Y. Cao, J. Simon, P. Fay, D.
IEEE Electron Device Lett., 29 (7) 661, 2008)
39) Effect of growth conditions on the conductivity of Mg doped p-type GaN by Molecular Beam Epitaxy
(J. Simon
& D.
Phys. Stat. Sol. A, 205 1074 2008)
38) Structural and transport properties of InN grown on GaN by MBE
(K. Wang,
T. Kosel & D.
Phys. Stat. Sol. C, 5 1811, 2008)
37) 2.3 nm barrier AlN/GaN HEMTs with insulated gates
(D. Deen,
T. Zimmermann, Y. Cao, D.
Phys. Stat. Sol. C, 5 2047, 2008)
(Y. Cao, K.
Wang & D.
Phys. Stat. Sol. C, 5 1873, 2008)
35) Formation of Ohmic contacts to ultrathin AlN/GaN HEMTs
(T.
Zimmermann, D. Deen, Y. Cao, D.
Phys. Stat. Sol. C, 5 2030, 2008)
(Y. Cao, K.
Wang, A. Orlov, H. Xing & D.
Appl. Phys. Lett., 92, 152112, 2008)
33) Photocurrent Polarization Anisotropy of Randomly Oriented Nanowire Networks
(Y. Lu, V.
Protasenko, D.
Nano. Lett., 8, 1352, 2008)
32) Evidence of hot electrons generated from an AlN/GaN HEMT
(S. Tripathy, G. Xu, X. Mu, Y. Ding, K. Wang, Y. Cao, D. Jena, & J. Khurgin
Appl. Phys. Lett., 92, 013513, 2008)
2007
31) Hot phonon effect on electron velocity saturation in GaN: A second look
(J.
Khurgin, Y. Ding, & D.
Appl. Phys. Lett., 91, 252104, 2007)
30) Tailoring the carrier mobility in semiconductor nanowires by remote dielectrics
(A. Konar
& D.
J. Appl. Phys., 102, 123705, 2007)
29) Conduction band offset at the InN/GaN heterojunction
(K. Wang,
C. Lian, N. Su, D.
Appl. Phys. Lett., 91, 232117, 2007)
28) MBE-grown Ultra-Shallow AlN/GaN HFET Technology
(H. Xing,
D. Deen, Y. Cao, T. Zimmerman, P. Fay, & D.
ECS Transactions, 11, 233, 2007)
(A. Singh,
X. Li, G. Galantai, V. Protasenko, M. Kuno, H. Xing, & D.
Nano Lett., 7 (10), 2999, 2007)
26) Carrier Statistics and Quantum Capacitance in Graphene Sheets and Ribbons
(T. Fang,
A. Konar, H. Xing & D.
Appl. Phys. Lett., 91, 092109, 2007)
25) Hydrodynamic instability of one-dimensional electron flow in semiconductors
(W. R.
C-Munoz, M. Sen & D.
J. Appl. Phys., 102, 023703, 2007)
24) A High-Mobility Window for Two-Dimensional Electron Gases at Ultrathin AlN/GaN Heterojunctions
(Y. Cao
& D.
Appl. Phys. Lett., 90, 182112, 2007)
23) Resonant Terahertz generation from InN thin films
(X. Mu, Y. J. Ding, K. Wang, D. Jena & Y. B. Zotova
Opt. Lett., 32, 1432, 2007)
(R. Zhou,
H.-C. Chang, V. Protasenko, M. Kuno, A. Singh, D.
J. Appl. Phys., 101, 073704, 2007)
21) Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering
(D.
Phys. Rev. Lett., 98, 136805, 2007) [In the News – a) NanoTech, b) Also featured in the Virtual Journal of Nanoscale Science and Technology]
2006
20) Compositional modulation and optical emission in AlGaN epitaxial films
(M. Gao, S. Bradley, Y. Cao, D. Jena, Y. Lin, S. Ringel, H. Hwang, W. Schaff, & L. Brillson
J. Appl. Phys., 100, 103512, 2006)
19) Hot Phonons in Si-Doped GaN
(J. Liberis, M. Ramonas, O.
Kiprijanovic, A. Matulionis, N. Goel, J. Simon, K. Wang, H. Xing, & D.
Appl. Phys. Lett., 89, 202117, 2006)
(K. Wang, Y. Cao, J. Simon, J. Zhang,
A. Mintairov, J. Merz, D. Hall, T. Kosel, & D.
Appl. Phys. Lett., 89, 162110, 2006)
17) Optical study of hot-electron transport in GaN: Signatures of the hot-phonon effect
(K. Wang,
J. Simon, N. Goel & D.
Appl. Phys. Lett., 88, 022103, 2006)
(J. Simon,
K. Wang, H. Xing, D.
Appl. Phys. Lett., 88, 042109, 2006)
15) Electron mobility in graded AlGaN alloys
(S. Rajan,
S. DenBaars, U. Mishra, H. Xing. & D.
Appl. Phys. Lett., 88, 042103, 2006)
14) Ultrathin CdSe Nanowire FETs and their Optical Properties
(A.
Khandelwal, D.
J. Electron. Mat., 35, 170, 2006)
2004
13) Spin scattering by dislocations in III-V Semiconductors
(D.
Phys. Rev. B 70, 245203, 2004) [Also featured in the Virtual Journal of Nanoscience and Technology, Dec 2004 issue.]
12) Dipole Scattering in highly polar semiconductor alloys
(W. Zhao and D.
J. Appl. Phys. 96, 2095, 2004)
11) AlGaN/GaN
polarization-doped field-effect transistor for microwave power applications
(Siddharth Rajan, Huili Xing, Steve
DenBaars, Umesh K. Mishra, and D.
Appl. Phys. Lett., 84, 1591, 2004)
As a graduate student @ UC Santa Barbara (Fall 1998 - Spring 2003)
2003
10) Magnetotransport properties of a polarization-doped three-dimensional electron slab
(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,
Phys. Rev. B 67 153306, 2003)
9) Explanation of anomalously high b in GaN-based bipolar transistors
(H. Xing, D.
IEEE Elect. Dev. Lett. 24 4, 2003)
(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,
Phys. Stat. Sol. C, 0 2339, 2003)
2002
7) Quantum and classical scattering times due to charged dislocations in an impure electron gas
(D.
Phys. Rev. B 66 241307, 2002)
(D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, and I. P. Smorchkova,
Appl. Phys. Lett., 81 4395, 2002)
5) Effect of p-doped overlayer thickness on RF-dispersion in GaN JFETs
(A.Jimenez, D. Buttari, D. Jena, R. Coffie, S. Heikman, N. Q. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, and U.K. Mishra,
IEEE Elec. Device Letters, 23 306, 2002
4) Effect of scattering by strain fields surrounding edge dislocations on electron transport in 2DEGs
(D.
Appl. Phys. Lett., 80 64, 2002 )
2001
3) Electron transport in III-V nitride 2DEGs
(D.
Phys. Stat. Sol. B, 228 617, 2001)
2000
2) Dipole scattering in polarization induced two-dimensional electron gases
(D.
J. Appl. Phys., 88 4734, 2000)
1) Dislocation scattering in a two-dimensional electron gas
(D.
Appl. Phys. Lett., 76 1707, 2000)
Research
Links
Nature (Materials, Nano, Physics, Photonics) Science PrFocus
RMP PRL PRB JAP APL APEX JJAP XXX NanoLetters PSS SSE SST
IEEE EDL (T) Electron Devices Nano JQE (Selected Topics) Main Submit
Web Of Science INSPEC SPIN XPlore
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