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Conferences/Workshops/Talks

 

Weekly seminars on Solid-State related topics.

 

The major conferences where we present our research results are -

Annual Conferences -

Device Research Conference (DRC),

Electronic Materials Conference (EMC),

Materials Research Society meetings (MRS), and

American Physical Society (APS) March Meetings.

 

Biannual Conferences -

International Workshop on Nitride Semiconductors (IWN),

International Conference on Nitride Semiconductors (ICNS),

Lester Eastman Conference on High-Performance Devices (LEC), and

International Conference on Physics of Semiconductors (ICPS).

 


Currently serving on the program committees of -

2008 Electronic Materials Conference

 

Previously served on the committee of –

2008 International Conference on Nitride Semiconductors

2007 Electronic Materials Conference

2006 Electronic Materials Conference

2005 Hot Carriers in Semiconductors conference (HCIS 2005, Chicago)


Upcoming Conferences


 

Conference

Dates

Location

Abstracts Deadline

 

 

 

 

 

1)

EMC 2008

June 25-27, 2008

Santa Barbara

Passed

2)

DRC 2008

June 23-25, 2008

Santa Barbara

Passed

3)

Les Eastman Conference 2008

Aug 5 -7, 2008

U. Delaware

May 1st, 2008

4)

IWN - 5

Oct 6 – Oct 10, 2008

Montreux, Switzerland

June 1st, 2008

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 


Invited Talks


1) Naval Research Laboratory, Washington D.C. (August 20, 2003).

Title: ``Electron Transport in AlGaN/GaN Heterostructures.''

 

2) ONR Electronic Materials Review, Monterey (August 3, 2004).

Title: ``Distributed Polarization Effects.''

 

3) SUNY Buffalo (March 4, 2005).

Title: ``Polarization engineering in III-V Nitride Heterostructures: Growth, Transport, and Device Applications.''

 

4) Arizona State University, Tempe (March 11, 2005).

Title: ``Compositionally graded polar semiconductors: doping and high-field transport.''

 

5) Workshop on Surface and Interface Electronics (ONR/Iowa), Palm Springs (April 13, 2005).

Title: ``Graded alloy heterojunctions: A possible solution for the hot-phonon effect?''

 

6) University of Illinois, Chicago (April 14, 2005).

Title: ``Polarization engineering in III-V Nitride semiconductors: Growth, Transport, and Device applications.''

 

7) ONR Electronic Materials Review, New Jersey (August 15, 2005).

Title: ``MBE growth of polarization-doped III-V nitride p-n junctions.''

 

8) DARPA Workshop on Nanoscale Optical Phonon Engineering (December 2005).

Title: ``The Hot-Phonon Effect in III-V Nitride Heterostructures: Impact on ultrafast transistors and epitaxial solutions.''

 

9) International Workshop on Multifunctional Materials III, San Carlos de Bariloche, Argentina (March 5, 2006).

Title: ``Compositionally graded polar semiconductors and ferroelectrics: Analogies and new multifunctional device possibilities.''

 

10) University of California Santa Barbara (March 2006).

Title: ``Semiconductor Nanowires: Transport and Optical properties, and applications in large-area flexible Transistors and Photodetectors.''

 

11) General Electric Corporate Research and Development (CRD) Niskayuna, New York (August 2006).

Title: ``MBE growth and polarization-doping in III-V Nitride Heterostructures: Applications to HBTs and ultrafast HEMTs.''

 

12) ONR Electronic Materials Review, Seattle (2006).

Title: ``MBE growth of polarization-doped III-V nitride p-n junctions on N-Face GaN.''

 

13) DARPA Workshop on Technologies for Heat Removal in Electronics At the Device Scale (THREADS) (November 2006).

Title: ``Can electron velocity in GaN HEMTs be improved by phonon engineering?.''

 

14) Advanced Heterostructures Workshop (AHW), Hawaii, (December 2006).

Title: ``Phonon-engineered HEMTs.''

 

15) Photonics West invited talk, San Jose, CA (January 2007).

Title: ``Ultrafast electron-phonon dynamics in III-V Nitride Heterostructures - Applications to Transistors and Quantum Cascade Lasers ''

 

16) GaN Reliability Workshop, Adelphi, MD (August 2007).

Title: ``Performance limits of AlN/GaN HEMTs and Electron Thermography for Reliability Studies''

 

 


Conference Presentations


 

As a graduate student @ UC Santa Barbara (Fall 1998 - Spring 2003)

 

1) D. Jena, A. C. Gossard and U. K. Mishra

International conference on physics of semiconductors (ICPS) Osaka, Japan 2000

``Dipole scattering in polarization induced 2DEGs''

Awarded the best paper by young author by IUPAP.

 

2) D. Jena, A. C. Gossard, and U. K. Mishra

American Physical Society (APS) March meeting, Seattle, 2001

``Electron transport in polarization induced 2DEGs and novel devices.''

 

3) D. Jena, I. Smorchkova, A. C. Gossard, and U. K. Mishra

International Conference on Nitride Semiconductors (ICNS), Denver, Colorado 2001

``Strain field induced deformation potential scattering by dislocations in 2DEGs.''

 

4) D. Jena, S. Heikman, R. Coffie, J. S. Speck, and U. K. Mishra

International Workshop on Physics of Semiconductor Devices (IWPSD) New Delhi, India, 2001

``Theoretical prediction of polarization induced bulk doping in III-V nitride alloys.''

 

5) D. Jena, S. Heikman, R. Coffie, J. S. Speck, and U. K. Mishra

Workshop on Compound Semiconductor Materials \& Devices (WOCSEMMAD), Austin, Texas, 2002

``Report on first observations of polarization bulk doping in graded AlGaN alloys.''

 

6) D. Jena, S. Heikman, S. Keller, J. S. Speck, and U. K. Mishra

Electronic Materials Conference (EMC) Santa Barbara, CA 2002

``Transport and charge control of polarization induced 3-dimensional doping in III-V nitride alloys.''

Awarded the best paper by young author by TMS.

 

7) D. Jena, S. Heikman, D. Green, R. Coffie, S. Keller, J. S. Speck, and U. K. Mishra

International Workshop on Nitride semiconductors (IWN) Aachen, Germany, 2002

``Polarization induced bulk p-type doping in a graded AlGaN alloy.''

 

8) D. Jena, A. Link, S. Heikman, S. Keller, J. S. Speck, and U. K. Mishra

International conference on physics of semiconductors (ICPS), Edinburgh, Scotland 2002

``Magnetotransport properties and Shubnikov de-Haas effects of polarization induced three-dimensional electron slab.''

 

9) D. Jena, J. Speck. and U. K. Mishra

North American MBE (NAMBE) conference, Keystone, Colorado (Sept 2003)

``Polarization-doping in III-V nitrides - MBE growth, transport, and device applications.''

 

As an Assistant Professor @ Notre Dame (Fall 2003 ...)

 

10) W. Zhao and D. Jena

American Physical Society (APS) March Meeting, Montreal (March 2004)

``Dipole scattering in highly polar semiconductor alloys and ferroelectrics.''

 

11) J. Simon, D. Jena, A. Chakraborty, H. Xing, and U. K. Mishra

Electronic Materials Conference (EMC), Notre Dame (June 2004)

``Non-Polar GaN: p-type doping and Ohmic contact technology.''

 

12) A. Khandelwal, D. Jena, J. Grebinski, K. Richter, and M. Kuno

Electronic Materials Conference (EMC), Notre Dame (June 2004)

``Ultrathin CdSe Nanowire FETs and their optical properties.''

 

13) D. Jena

American Physical Society (APS) March Meeting, Los Angeles (March 2005)

``Dislocation spin scattering: Opportunity for Spin-Interconnects by Heteroepitaxy.''

 

14) D. Jena, H. Xing, S. Rajan, J. Speck, U. Mishra, A. Link, and O. Ambacher

Physics and Chemistry of Surfaces and Interfaces (PCSI-32), Bozeman (January 2005)

``Polarization-induced electron gases at abrupt and graded III-V nitride heterointerfaces.''

 

15) K. Wang, J. Simon, N. Goel, and D. Jena

14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14), Chicago (July 2005)

``Photoluminescence study of Electric-Field Induced Hot Carriers in an n-GaN MESFET.''

 

16) A. Khandelwal, D. Jena, V. Protasenko, M. Kuno, A. Shricker, and B. Korgel

Materials Research Society (MRS) Fall Meeting, Boston (Nov-Dec 2005)

``Transport properties of Solution-Grown Single and Multiple CdSe Nanowire FETs.''

 

17) J. Simon,  S. Rajan, K. Wang, H. Xing, and D. Jena

Materials Research Society (MRS) Fall Meeting, Boston (Nov-Dec 2005)

``Polarization-induced 3-dimensional electron slabs in graded AlGaN layers.''

 

18) A. Singh, A. Khandelwal, X. Li, H. Xing, M. Kuno, and D. Jena

Device Research Conference (DRC) 2006, Penn State University, (June 2006)

``Field-Effect Transistors and Photodetectors based on Solution-Synthesized Nanowires."

 

19) A. Singh, V. Protasenko, M. Kuno, H. Xing, and D. Jena

Electronic Materials Conference (EMC) 2006, Penn State University, (June 2006)

``Transport properties of Solution-Grown thin-film Nanowire Solids."

 

20) D. Jena, R. Zhou, H.-C. Chang, V. Protasenko, and M. Kuno

Electronic Materials Conference (EMC) 2006, Penn State University, (June 2006)

``A Self-Assembling Semiconductor Nanowire-Based Pathogen Detection System."

 

21) A. Singh, X. Li, V. Protasenko, M. Kuno, D. Jena, and H. Xing

Electronic Materials Conference (EMC) 2006, Penn State University, (June 2006)

``Photocurrent spectroscopy of colloidal CdSe nanowire based quantum-dot solids."

 

22) K. Wang, Y. Cao, J. Simon, J. Zhang, T. Kosel, K. Sun, A. Mintairov, J. Merz, D. Hall, and D. Jena

Electronic Materials Conference (EMC) 2006, Penn State University, (June 2006)

`` Structural, Electrical, and Optical Properties of InN grown on GaN substrates by Molecular Beam Epitaxy."

 

23) A. Singh, A. Khandelwal, X. Li, H. Xing, M. Kuno, and D. Jena

Lester Eastman Conference (LEC) 2006, Cornell University, (August 2006)

`` Polarization-Sensitive Photodetectors based on Electric-Field aligned Nanowires."

 

24) X. Mu, Y. J. Ding, K. Wang, D. Jena, and J. Khurgin

Lasers and Electro-Optic Society  (LEOS Annual meeting) 2006, Montreal, (Nov 2006)

`` Observation of strong many-body effects in thin InN layers grown on GaN."

 

25) J. Simon, H. Xing, and D. Jena

Materials Research Society (MRS) Fall Meeting, Boston (Nov-Dec 2006)

``Polarization-induced p-doping in N-Face graded AlGaN/GaN p-n junctions.''

 

26) Y. Cao, and D. Jena

Materials Research Society (MRS) Fall Meeting, Boston (Nov-Dec 2006)

``Ultrathin AlN/GaN heterojunctions by MBE for THz applications.''

 

27) D. Jena, Y. Cao

Photonics West (SPIE), San Jose, CA (Jan 2007)

``Ultrafast electron-phonon dynamics in III-V Nitride Heterostructures - Applications to Transistors and Quantum Cascade Lasers.''

 

28) D. Jena, Y. Cao, D. Deen, H. Xing

Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) Savannah, GA (Feb 2007)

``Phonon-engineering in III-V Nitride HEMTs.''

 

29) A. Konar & D. Jena

APS March Meeting, Denver, CO (Mar 2007)

``Improving electron mobility in nanostructures by dielectric engineering.''

 

30) A. Singh, D. Jena, V. Protasenko, M. Kuno, H. Xing

Materials Research Society (MRS) Spring Meeting, San Francisco, (April 2007)

``Polarization-sensitive photodetectors based on solution-synthesized CdSe and CdTe quantum-wire solids."

 

31) D. Jena, A. Singh, V. Protasenko, H. Xing, M. Kuno

Materials Research Society (MRS) Spring Meeting, San Francisco, (April 2007)

``Electron transport properties of solution-synthesized semiconducting quantum-wire solids."

 

32) G. Xing, D. Deen, C. Yu, J. Simon, D. Jena, P. Fay

Materials Research Society (MRS) Spring Meeting, San Francisco, (April 2007)

``Ultrashallow channel AlN/GaN Heterojunction FETs."

 

33) Y. Cao, D. Deen, K. Wang, D. Jena

Electronic Materials Conference (EMC) 2007, Notre Dame, (June 2007)

``High-mobility ultrashallow pseudomorphic AlN/GaN heterojunctions by MBE."

 

34) J. Herzog, A. Mintairov, K. Sun, Y. Cao, D. Jena, J. Merz

Electronic Materials Conference (EMC) 2007, Notre Dame, (June 2007)

``IR reflectivity spectroscopy of optical phonons in short-period AlGaN/GaN superlattices."

 

33) A. Singh, M. Kuno, H. Xing, D. Jena

Electronic Materials Conference (EMC) 2007, Notre Dame, (June 2007)

``Transport properties and applications of quantum-wire solids."

 

34) A. Konar, D. Jena

Electronic Materials Conference (EMC) 2007, Notre Dame, (June 2007)

``Enhancement of carrier mobility in semiconductor nanostructures using the dielectric mismatch effect."

 

35) K. Wang, C. Lian, N. Su, J. Timler, D. Jena

Electronic Materials Conference (EMC) 2007, Notre Dame, (June 2007)

``Conduction band offset and Schottky barrier formation at InN/GaN heterojunctions."

 


Last updated: 8/22/2007

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