EE 87024 Wide Bandgap Device Physics

Fall 2009

Instructor

Debdeep Jena

Dept. of Electrical Engineering, University of Notre Dame

Office: 271 Fitz

Web: http://www.nd.edu/~djena

Class Hours

Fall 2009 – Tuesdays and Thursdays

8:00am – 9:15am, DeBartolo 119.

Office hours: Tuesdays, Thursdays, after class.

Information

• Grading, assignments, and project evaluation policy.
• Suggested Project topics.
• Project groups.
• Plan for Last 4 weeks: Lectures, Reports, and Talks

Objectives

The class will provide graduate students with a solid understanding of the basic underlying physics of wide bandgap semiconductors that lead to practical applications. Starting from electronic bandstructure, we will cover topics such as electron-phonon interactions, charge scattering and transport, and optical properties of wide-bandgap semiconductors. Quantum confinement effects in modern nanoscale electronic and optical devices will be covered in detail.

• Students will be required to choose a research topic for a project early in the class and make presentations and write term papers. Evaluation will be based on assignment solutions, reports, and presentations.
• Project reports that are of sufficiently high quality will be considered for publication in peer-reviewed journals, and can be presented by students in conferences.

Topics

|| Semiconductor Bandstructure || Polarization in Wide-Bandgaps || Phonons, Lattice vibrations || Defects, Doping || Transport || Optical properties || Quantum-confined structures || Superlattices, Quantum wells, wires, and dots || Electronic Devices || Optical Devices ||

Prerequisites

Undergraduate level Solid-State Physics and Quantum Mechanics.

Textbooks

None required. I will hand out notes and papers when necessary.

Suggested References

• Quantum Mechanics for Engineering: Material Science and Applied Physics

Herbert Kroemer, Prentice Hall

• Physics of Low-Dimensional Semiconductors

John Davies, Cambridge University Press (1997).

• Physical Properties of Semiconductors

Wolfe, Holonyak, and Stillman, Prentice-Hall (1989).

• Fundamentals of Semiconductors: Physics and Material Properties

Peter Y. Yu & Manuel Cardona, Springer-Verlag (2001).

• Polarization Effects in Semiconductors

C. Wood & D. Jena, Springer (2007).

Assignments

No.	Topics.	Posted	Due	Solution.
1.	Bloch’s theorem, Electron bandstructure	09/08/09	09/18/09
2.	Perturbation theory, k.p Models	09/17/09	10/02/09
3.	Time-dependent perturbation theory, Charge Transport Properties	10/15/09	10/30/09
4.	Optical Properties of Bulk & Quantized Heterostructures	11/14/09	11/23/09
5.		../../09	../../09
6.		../../09	../../09

Supporting Slides

Slides (pdf)

Notes/Course Materials

	Topic	Notes	Posted
1.	Bandstructure	k.p theory (Notes)	09/02/09
2.	Quantum Structures	Low-Dimensional Structures (Notes)	09/06/09
3.	Effective mass theory and Charge Transport	EMA + Charge Transport Theory (Notes)	09/28/09
4.	Optical properties of semiconductors	Optical properties of Semiconductors	11/06/09
			../../09
			../../09

Papers

	Topic	Notes	Posted
1.	The toughest transistor yet	article (IEEE Spectrum)	08/24/09
2.	Valence band engineering in quantum well lasers	article (IEEE J. Lightwave Tech., 1988)	11/18/09
			../../09
			../../09
			../../09
			../../09

Exam

Midterm exam Solutions

Presentation Schedule

Date	Topic.	Team	Talk	Report
ROUND I (EE Conference Room)
11/20/2009 (Friday, 5:00-6:15 pm)	1) Charge Transport in III-V Nitrides: Polarization and alloy effects 2) Boron Nitride	Tahy, Fang, Konar, Simon Guowang, Bill	slides slides	report report
11/23/2009 (Monday, 5:15-6:30 pm)	3) Valence band engineering in III-V nitride semiconductors and alloys 4) Deep-UV LEDs by valence band engineering	Yeqing, Guangle, Jia Guo, Zongyang Wenjie, Boxiu, Ronghua	slides slides	report report
11/24/2009 (Tuesday, 5:15-6:45 pm)	5) Tunneling transport in III-V Nitride Heterostructures 6) High-temperature transport properties in GaN heterostructures 7) Ballistic transport in Nitride Devices	K. Karda, J. Verma, S. Ganguly Ashraf, Vasen, Jafar, and Faisal Cao Yu	slides slides slides	report report report
ROUND II (Fitzpatrick 356)
12/02/2009 (Wednesday, 5:15-6:30 pm)	1) Charge Transport in III-V Nitrides: Polarization and alloy effects 2) Ballistic transport in Nitride Devices	Tahy, Fang, Konar, Simon Cao Yu
12/04/2009 (Friday, 5:15-6:30 pm)	3) Valence band engineering in III-V nitride semiconductors and alloys 4) Deep-UV LEDs by valence band engineering	Yeqing, Guangle, Jia Guo, Zongyang Wenjie, Boxiu, Ronghua
12/09/2009 (Wednesday, 5:15-6:45 pm)	5) Boron Nitride 6) Tunneling transport in III-V Nitride Heterostructures 7) High-temperature transport properties in GaN heterostructures	Guowang, Bill K. Karda, J. Verma, S. Ganguly Ashraf, Vasen, Jafar, and Faisal
12/11/2009 (Friday, 5:15-6:45 pm)	Summary of Topics Covered & Project Results, Discussion, Pizza

Links to similar classes in other Universities

• Class @ UIUC taught by Prof. Umberto Ravaioli.
• Class @ MIT taught by Prof. Terry Orlando.
• Class @ UCSD taught by Prof. Edward Yu.
• Class @ RPI taught by Prof. Fred Schubert.

Contact

Email: djena at nd dot edu if you have any questions.