EE 87024 Wide Bandgap Device Physics

Fall 2009

Instructor

Debdeep Jena

Dept. of Electrical Engineering, University of Notre Dame

Office: 271 Fitz

Web: http://www.nd.edu/~djena

Class Hours

Fall 2009 – Tuesdays and Thursdays

8:00am – 9:15am, DeBartolo 119.

Office hours: Tuesdays, Thursdays, after class.

Information

• Grading, assignments, and project evaluation policy.
• Suggested Project topics.
• Project groups.
• Plan for Last 4 weeks: Lectures, Reports, and Talks

Objectives

The class will provide graduate students with a solid understanding of the basic underlying physics of wide bandgap semiconductors that lead to practical applications. Starting from electronic bandstructure, we will cover topics such as electron-phonon interactions, charge scattering and transport, and optical properties of wide-bandgap semiconductors. Quantum confinement effects in modern nanoscale electronic and optical devices will be covered in detail.

• Students will be required to choose a research topic for a project early in the class and make presentations and write term papers. Evaluation will be based on assignment solutions, reports, and presentations.
• Project reports that are of sufficiently high quality will be considered for publication in peer-reviewed journals, and can be presented by students in conferences.

Topics

|| Semiconductor Bandstructure || Polarization in Wide-Bandgaps || Phonons, Lattice vibrations || Defects, Doping || Transport || Optical properties || Quantum-confined structures || Superlattices, Quantum wells, wires, and dots || Electronic Devices || Optical Devices ||

Prerequisites

Undergraduate level Solid-State Physics and Quantum Mechanics.

Textbooks

None required. I will hand out notes and papers when necessary.

Suggested References

• Quantum Mechanics for Engineering: Material Science and Applied Physics

Herbert Kroemer, Prentice Hall

• Physics of Low-Dimensional Semiconductors

John Davies, Cambridge University Press (1997).

• Physical Properties of Semiconductors

Wolfe, Holonyak, and Stillman, Prentice-Hall (1989).

• Fundamentals of Semiconductors: Physics and Material Properties

Peter Y. Yu & Manuel Cardona, Springer-Verlag (2001).

• Polarization Effects in Semiconductors

C. Wood & D. Jena, Springer (2007).

Assignments

No.	Topics.	Posted	Due	Solution.
1.	Bloch’s theorem, Electron bandstructure	09/08/09	09/18/09
2.	Perturbation theory, k.p Models	09/17/09	10/02/09
3.	Time-dependent perturbation theory, Charge Transport Properties	10/15/09	10/30/09
4.	Optical Properties of Bulk & Quantized Heterostructures	11/14/09	11/23/09
5.		../../09	../../09
6.		../../09	../../09

Supporting Slides

Slides (pdf)

Notes/Course Materials

	Topic	Notes	Posted
1.	Bandstructure	k.p theory (Notes)	09/02/09
2.	Quantum Structures	Low-Dimensional Structures (Notes)	09/06/09
3.	Effective mass theory and Charge Transport	EMA + Charge Transport Theory (Notes)	09/28/09
4.	Optical properties of semiconductors	Optical properties of Semiconductors	11/06/09
			../../09
			../../09

Papers

	Topic	Notes	Posted
1.	The toughest transistor yet	article (IEEE Spectrum)	08/24/09
2.	Valence band engineering in quantum well lasers	article (IEEE J. Lightwave Tech., 1988)	11/18/09
			../../09
			../../09
			../../09
			../../09

Exam

Midterm exam Solutions

Class Projects

No.	Topic.	Team	Talk	Report
1.	Tunneling transport in III-V Nitride Heterostructures	K. Karda, J. Verma, S. Ganguly
2.	Charge Transport in III-V Nitrides: Polarization and alloy effects	K. Tahy, T. Fang, N. Sun, A. Konar
3.	High-temperature transport properties in GaN heterostructures	Ashraf, Vasen, Jafar, and Faisal
4.	Boron Nitride	Guowang Li, Bill O’Brien
5.	Deep-UV LEDs, valence band engineering	Wenjie, Boxiu, Ronghua
6.	Valence band engineering in III-V nitride semiconductors and alloys, p-type doping	Yeqing, Guangle, Jia Guo, Zongyang
7.	Ballistic transport in Nitride Devices	Cao Yu
8.

Presentation Schedule

Date	Topic.	Team	Talk	Report
11/20/2009 (Friday, 5:00-6:15 pm)	1) Charge Transport in III-V Nitrides: Polarization and alloy effects 2) Boron Nitride	Tahy, Fang, Konar, Simon Guowang, Bill
11/23/2009 (Monday, 5:15-6:30 pm)	3) Valence band engineering in III-V nitride semiconductors and alloys 4) Deep-UV LEDs by valence band engineering	Yeqing, Guangle, Jia Guo, Zongyang Wenjie, Boxiu, Ronghua
11/24/2009 (Tuesday, 5:15-6:45 pm)	5) Tunneling transport in III-V Nitride Heterostructures 6) High-temperature transport properties in GaN heterostructures 7) Ballistic transport in Nitride Devices	K. Karda, J. Verma, S. Ganguly Ashraf, Vasen, Jafar, and Faisal Cao Yu
4.
5.
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7.
8.

Links to similar classes in other Universities

• Class @ UIUC taught by Prof. Umberto Ravaioli.
• Class @ MIT taught by Prof. Terry Orlando.
• Class @ UCSD taught by Prof. Edward Yu.
• Class @ RPI taught by Prof. Fred Schubert.

Contact

Email: djena at nd dot edu if you have any questions.