EE 60566  Solid State Devices

Spring semester, 2009

Time: Tuesdays & Thursdays 5:00 – 6:15 pm, Debartolo, Room 246

Instructor: Dr. Debdeep Jena

Office Hours: Wednesdays 1:00 – 2:30 pm (Fitz 271)

 

Course description

In this class, we will study the physics and technology of various semiconductor-based electronic and optical devices.  I will place a strong emphasis on the ability to draw accurate band diagrams.  We will begin with a detailed study of the properties of various types of junctions (p-n junctions, heterojunctions, metal-semiconductor junctions) and how current flows across them.  This will lead us naturally to the various electronic devices such as Bipolar Junction Transistors (BJTs and the many variants), and Field Effect Transistors (FETs and the many variants).  With miniaturization, today’s solid-state devices are exciting playgrounds for applied quantum mechanics; quantum wells and dots are regularly used not only for the study of fundamental physics, but technologically relevant devices.  A strong emphasis will be placed on the quantum-mechanical engineering of semiconductor devices.  The course will culminate with an analysis of the most basic optical devices, the Light Emitting Diode (LED).  The importance of miniaturization and heterostructures in modern high-speed quantum-effect devices will be emphasized throughout.  I encourage questions and discussion in and out of the class.

 

Examinations and grading

50% Assignments (~10 assignments, each assignment = 5% of final grade!)

10% 1st Mid Term

15% 2nd Mid Term

25% Final Exam

 

Syllabus/Text/References

The required text for the class is -

  • Semiconductor Device Physics and Design

Mishra and Singh, (MS)

Springer, 1st Edition, ISBN 1402064802

Brand new textbook that does justice to compound semiconductors as well as Silicon devices. 

Information on Amazon, and comparative prices for online purchase.

The suggested references are -

  • Nanoscale Transistors

Mark Lundstrom and Jing Guo (LG)

Springer, 2006

A short book describing MOSFETs from the ballistic transport viewpoint.  Discusses scaling and transistor limits.

  • Device Electronics for Integrated Circuits

Richard Muller, Theodore Kamins, and Mansun Chan (MKC)

John Wiley and Sons, 3rd Edition, ISBN: 0471593982

Excellent treatment of MOSFETs and Bipolar Transistors.  Limits itself to Silicon based electronic devices.

  • Physics of Semiconductor Devices

Simon Sze (SZE),

Wiley Interscience

A classic.  Very encyclopedic; an excellent handbook for practicing device engineers.

  • Fundamentals of VLSI Devices

Taur and Ning (TN),

Cambridge University Press

Very comprehensive and well written textbook, but limits itself to Silicon based electronic devices. 

 

Class Notes

I will hand out notes as and when required.  I will post typed notes for the topics I prefer presenting in ways different from the textbook/references.  Unless otherwise stated, the textbook will be the primary source of reference. 

 

No.

Topic

Date posted

1.

Class Information + Combined Notes

1/13/2009

2.

Supporting Slides

1/22/2009

 

Assignments

Problems in the assignment are designed for you to solve on your own.  Many of the problems are carefully designed to emphasize the concepts rather than crunching numbers.  Discussion of problems amongst yourself and with the instructor is encouraged.  However, the solutions have to be your own.  Deadlines are strictly enforced.  Turn in your assignment solutions by 5pm of the due date in the instructor’s mailbox at 275 Fitzpatrick.  I will assign one assignment per week.  Please print out the problem sheet and attach it on top of your solution with your name and email address.  Please do not turn in your scratch papers – write up the final solution neatly and BOX your final answers wherever appropriate.

 

No.

Topic

Date posted

Date Due

Solutions

1.

Review of Semiconductor Physics – Doping, Transport, Electrostatics

1/14/2009

1/22/2009

pdf file

2.

Density of States, Drift/Diffusion, and Schottky Diodes

1/22/2009

1/29/2009

pdf file

3.

Schottky & Ohmic Contact Physics and Device Applications

2/01/2009

2/06/2009

pdf file

4.

Fun with p-n Junction Physics

2/06/2009

2/13/2009

pdf file

5.

Current flow and Transients in p-n Junctions

2/20/2009

2/27/2009

pdf file

6.

Bipolar Transistors: BJTs & HBTs

2/27/2009

3/20/2009

pdf file

7.

Speed of Bipolar Transistors & Introduction to FETs

3/27/2009

4/03/2009

pdf file

8.

MESFETs and HEMTs

4/05/2009

4/14/2009

pdf file

9.

MOS Capacitors, MOSFETs, and Short-Channel Effects

4/13/2009

4/22/2009

pdf file

10.

Ballistic FETs and Future Devices

4/25/2009

5/01/2009

pdf file

 

Exams

No.

Exam

Solutions

1.

1st MidTerm Exam

 

2.

2nd MidTerm Exam

Ishibashi’s Paper

3.

Final Exam

 

For practice: Previous year exam questions

1st Mid Term:              2004    2005    2006    2007    2008

2nd Mid Term:              2004    2005    2006    2007    2008

Final Exam:                 2004    2005    2006    2007    2008

 

Reviews

No.

 

Date posted

1.

 

*/**/2009

2.

 

*/**/2009

 

Links to similar graduate level classes offered at other universities:

No.

Course

Where

1.

MIT-1, MIT-2

MIT

2.

UCSB

UC Santa Barbara

3.

Purdue

Purdue

 

 

 

 

Link to Online Photo

This page is maintained by: Debdeep Jena (djena@nd.edu)

Last updated: 4/04/2009