Physics of Electron Transport in Semiconductor Devices

 

Course number: EE 80656

Instructor: Debdeep Jena (djena@nd.edu, http://www.nd.edu/~djena)

Lectures: Wednesdays, 5:00 - 7:30pm, with a 10 min break

Location: DBRT 244

 

Course description

The purpose of this class is to arm graduate students with a solid understanding of charge and energy transport phenomena in semiconductors.  It is of interest to students from the Electrical Engineering, Physics, Chemistry, and Mechanical Engineering students whose research interests are at the intersection of materials and charge/heat transport.  The concepts developed are directly applied in designing high-speed semiconductor devices (transistors, lasers, etc), modern nanowire/nanocrystal based devices, energy-harvesting devices that exploit charge generation and transport (photovoltaics) as well as those that exploit charge+energy transport (thermoelectrics).

 

Topics to be covered

  • Quantum mechanical foundations
  • Carrier scattering phenomena
  • Boltzmann Transport Equation
  • Low and high-field transport
  • Quantum transport
  • Comparison of transport in the localization, diffusive, and ballistic regimes

 

Textbook

Fundamentals of Carrier Transport (by Mark Lundstrom)

·  Hardcover: 464 pages

·  Publisher: Cambridge University Press; 2 edition (October 26, 2000)

·  Language: English

·  ISBN: 0521631343

 

Other references/handouts

Topic

Notes

Posted

 

1) Bandstructure

k.p theory (Notes) | Low-Dimensional Structures (Notes)

09/21/06

 

2) Transport

Eff. Mass Approx, Envelope Functions, Transport (Notes)

09/21/06

 

 

 

 

Project/Seminar topics

No.

Student/Group

Topic

Problem definition

(Presentation)

Problem definition

(Written Report)

Final Reports

(pdf Files)

Final Presentation

(Schedule)

 

 

 

11/15/2006

11/29/2006

12/11/2006

12/12/2006

1)

Albert Wang

Bandstructure of Indium Nitride.

pdf file

pdf file

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2)

Lian Chuanxin

Balance-equation analysis of impact ionization.

pdf file

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3)

Williams Calderon

Instabilities in 2D electron flow in semiconductors.

pdf file

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4)

Xiu Xing

Modeling of transport in HBTs.

pdf file

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5)

Joey Herzog

Phonons in AlN/GaN superlattice structures.

pdf file

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6)

Aniruddha Konar

Electron-phonon interaction in semiconductor nanowires.

pdf file

pdf file

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7)

Cao Yu

Superlattice phonon cavities.

pdf file

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8)

David Deen /

Robin Joyce

Effect of dislocation scattering on quantum transport at high magnetic  fields.

pdf file

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9)

Amol Singh /

Ze Zhang

Effect of dielectric mismatch on transport in Nanostructures.

pdf file

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10)

YongJin Cho /

Shi-Tsin Lin

Tunneling transport through magnetic barriers.

pdf file

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Notes for written reports:

 

- The first writeup (problem definition) should be written as a “letter”, not more than 3 pages long (in a 2-column format) including an abstract, figures & references.

- The best example of what the document should look like is an article in Applied Physics Letters (see here). 

- A LaTeX formatted document would be preferred.  It is strongly suggested you use RevTeX templates available from journal websites such as Applied Physics Letters and/or Physical Review Letters.

- If you prefer to use other word-processors, please follow the same rules as mentioned above.  For the final report (which will be a maximum of 6 pages), you can use the first report and expand it. 

 

Assignment Problems

1) Lundstrom, Chapter 1

            Bandstructure, Electron Counting & DOS: Problems 1.4, 1.8, 1.10, 1.14

            Electron Densities and Energies: Problems 1.5, 1.6, 1.12

            Scattering and Currents: Problems 1.1, 1.2, 1.15

 

Maintained by Debdeep Jena (djena [at] nd.edu)