EE 30566 Solid State Devices

Spring semester, 2006

Time: M W F 9:35 – 10:25 DeBartolo 202

Office Hours: Wednesday 10:30 – 12:00

Course description

In this class, we will study the physics and technology of various semiconductor-based electronic and optical devices. I will place a strong emphasis on the ability to draw accurate band diagrams. We will begin with a detailed study of the properties of various types of junctions (p-n junctions, heterojunctions, metal-semiconductor junctions) and how current flows across them. This will lead us naturally to the various electronic devices such as Bipolar Junction Transistors (BJTs and the many variants), and Field Effect Transistors (FETs and the many variants). The course will culminate with an analysis of the most basic optical devices, the Light Emitting Diode (LED). The importance of miniaturization and heterostructures in modern high-speed devices will be emphasized throughout. I encourage questions and discussion in and out of the class.

Examinations and grading

50% Assignments (one every week)

10% 1^st Mid Term

15% 2^nd Mid Term

25% Final Exam

Syllabus/Text/References

The required text for the class is -

Semiconductor Device Physics

Jasprit Singh, and Umesh Mishra

To be published, evaluation copies will be made available at the copy shop.

The suggested references are -

Device Electronics for Integrated Circuits

Richard Muller, Theodore Kamins, and Mansun Chan

John Wiley and Sons, 3^rd Edition, ISBN: 0471593982

Physics of Semiconductor Devices

Simon Sze, Wiley

A classic. Very encyclopedic; an excellent handbook for practicing device engineers.

Fundamentals of VLSI devices

Taur and Ning, Cambridge University Press

Very comprehensive and well written textbook, but limits itself to Silicon based electronic devices. I highly recommend it as an accompanying text.

Class Notes

I will hand out notes as and when required. I will post typed notes for the topics I prefer presenting in ways different from the textbook/references. Unless otherwise stated, the textbook will be the primary source of reference.

No.	Topic	Date posted
1.	Motivation	1/18/2006

Assignments

Problems in the assignment are designed for you to solve on your own. Many of the problems are carefully designed to emphasize the concepts rather than crunching numbers. Discussion of problems amongst yourself and with the instructor is encouraged. However, the solutions have to be your own. Deadlines are strictly enforced. Turn in your assignment solutions by 5pm of the due date in the instructor’s mailbox at 275 Fitzpatrick. I will assign one assignment per week. Please print out the problem sheet and attach it on top of your solution with your name and email address. Please do not turn in your scratch papers – write up the final solution neatly and BOX your final answers wherever appropriate.

Note on 1D Poisson usage

No.	Topic	Date posted	Date Due	Solutions
1.	Semiconductor bandstructure, Doping, and Gauss’s Law	1/22/2006	1/27/2006	pdf
2.	2,1-D Carrier concentrations, drift & diffusion currents	1/28/2006	2/03/2006	pdf
3.	(p-, i- ,n-) junctions: some simple, some perplexing	2/04/2006	2/10/2006	pdf
4.	Punchthrough diodes, and currents in p-n junctions	2/11/2006	2/17/2006	pdf
5.	R-G currents, Homo/Heterojunction Short/Long base diodes	2/20/2006	2/27/2006	pdf
6.	Diode switching, R-G currents, and Solar cells	2/27/2006	3/06/2006	pdf
7.	BJTs, HBTs, and all that	3/31/2006	4/07/2006	pdf
8.	High-Injection effects, Mott Diodes, and the Roadmap	4/11/2006	4/19/2006	pdf
9.	MESFETs and HEMTs – Basics to device design	4/21/2006	4/28/2006	pdf
10.	MOSFETs – Memories, and device operation	4/30/2006	5/05/2006	pdf

Exams

No.	Exam	Date posted
1.	1^st Midterm: p-n junction with a quantum-well base	3/10/06
2.	2^nd Midterm: SiGe HBT – gain and speed	4/10/06
3.	Final Exam: Basics, HEMTs, and MOSFETs	5/11/06

Reviews

No.		Date posted
1.	Review Slides (All topics)	03/02/2006
2.

This page is maintained by: Debdeep Jena (djena@nd.edu)

Last updated: 5/11/2006