Last updated Oct. 31, 2006 dch

Journal Articles  (see below for recent Conference and Symposia Papers)

J38.    Di Liang, Jusong Wang and Douglas C. Hall, “High-Efficiency Native-Oxide-Passivated High-Index-Contrast Ridge Waveguide Lasers”, Electronics Letters (2006), vol. 42, pp. 349-350 (2006).

The above article was published in Electronics Letters.  Copyright 2006 Institution of Electrical Engineers (IEE).  Available from IET Digital Library.

J37.    Y. Cao, X. Li, P. Fay, J. Zhang, T. H. Kosel and D. C. Hall, “Microwave Performance of GaAs MOSFET with Wet-Thermally-Oxidized InAlP Gate Dielectric,” IEEE Electron Device Letters, vol. 27, pp. 317-319 (2006).

The above article may be found at IEEE Xplore.  ©2006 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.

J36.    Yong Luo and Douglas C. Hall, “Non-Selective Wet Oxidation of AlGaAs Heterostructure Waveguides Through Controlled Addition of Oxygen,” IEEE J. Selected Topics in Quantum Electronics, Special Issue on Optoelectronic Materials and Processing, vol. 11, pp. 1284-1291 (2005).

The above article may be found at IEEE Xplore.  ©2005 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.

J35.    Y. Cao, J. Zhang, X. Li, T. H. Kosel, P. Fay, and D. C. Hall, X. Zhang, R. D. Dupuis, J. B. Jasinski and Z. Liliental-Weber, “Electrical properties of InAlP native oxides for metal-oxide-semiconductor device applications,” Applied Physics Letters, vol. 86, article 062105 (February 7, 2005).

The above article may be found at Scitation.  Copyright 2005 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

J34.    X. Li, Y. Cao, D. C. Hall, P. Fay, B. Han, A. Wibowo and N. Pan, “GaAs MOSFET Using InAlP Native Oxide as Gate Dielectric,” IEEE Electron Device Letters, vol. 25, pp. 772-774 (2004).

The above article may be found at IEEE Xplore.  ©2004 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.

J33.    X. Li, Y. Cao, D. C. Hall, P. Fay, X. Zhang and R. D. Dupuis, “Electrical characterization of native-oxide InAlP/GaAs metal-oxide-semiconductor heterostuctures using impedance spectroscopy,” Journal of Applied Physics, vol. 95, pp. 4209-4212 (2004).

The above article may be found at Scitation.  Copyright 2004 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

J32.    L. Kou, D. C. Hall, C. Strohhöfer, A. Polman, T. Zhang, R. M. Kolbas, R. Heller and R. D. Dupuis, “Er-doped AlGaAs Native Oxides: Photoluminescence Characterization and Process Optimization,” Journal of Selected Topics in Quantum Electronics, Special Issue on Optoelectronic Materials and Processing, vol. 8, pp. 880-890 (July/August 2002).

The above article may be found at IEEE Xplore.  ©2002 IEEE. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEEE.

J31.    P. Z. Zatta and D. C. Hall, “Ultra-high-stability two-stage superfluorescent fibre sources for fibre optic gyroscopes,” Electronics Letters, vol. 38, pp. 406-408 (2002).

The above article was published in Electronics Letters.  Copyright 2002 Institution of Electrical Engineers (IEE).  Available from IET Digital Library.

J30. S.-K. Cheong, B. A. Bunker, T. Shibata, D. C. Hall, C. B. DeMelo, Y. Luo, G. L. Snider, G. Kramer and N. El-Zein, “The residual arsenic site in oxidized Al_xGa_1-xAs (x=0.96),” Applied Physics Letters, vol. 78, no. 17, pp. 2458-2460 (2001).

The above article may be found at Scitation.  Copyright 2001 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

J29. Seong-Kyun Cheong, Bruce A. Bunker, D.C. Hall, G.L. Snider, and P. J. Barrios, “XAFS and X-ray reflectivity study of III-V compound semiconductor native oxide/GaAs interfaces,” Journal of Synchrotron Radiation, vol. 8, pp. 824-826 (2001).

The above article may be found at S.-K. Cheong et al., J. Synchrotron Rad. 8, 824-826.  Copyright 2001 International Union of Crystallography. A reprint (pdf format) of the above article may be downloaded for personal use only. Any other use requires prior permission of the author and the International Union of Crystallography.

J28. C. B. DeMelo, D.C. Hall, G.L. Snider, D. Xu, G. Kramer, and N. El-Zein, “High-Electron-Mobility InGaAs-GaAs Field-Effect Transistor with Thermally Oxidized AlAs Gate Insulator,” Electronics Letters, vol. 36, pp. 84-86 (2000).

The above article was published in Electronics Letters.  Copyright 2000 Institution of Electrical Engineers (IEE).  Available from IET Digital Library.

J27. Y. Luo, D. C. Hall, L. Kou, L. Steingart, J. H. Jackson, O. Blum and H. Hou, “Oxidized Al_xGa_1-xAs heterostructure planar waveguides,” Applied Physics Letters, vol. 75, pp. 3078-3080 (1999).

The above article may be found at Scitation.  Copyright 1999 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

J26. D. C. Hall, H. Wu, L, Kou, Y.Luo, R. J. Epstein, O.Blum, H.Hou, “Refractive index and hygroscopic stability of Al_xGa_1-xAs native oxides,” Applied Physics Letters, vol. 75, pp. 1110-1112 (1999).

The above article may be found at Scitation.  Copyright 1999 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. 

J25. L. Kou, D. C. Hall and H. Wu, "Room-temperature 1.5 µm photoluminescence of Er³⁺-doped Al_xGa_1-xAs native oxides," Applied Physics Letters, vol. 72, pp. 3411-3413 (1998).

The above article may be found at L. Kou et al., Appl. Phys. Lett. 72, 3411 (1998).   Copyright 1998 American Institute of Physics. A reprint (pdf format) of this article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Conference and Symposia Papers  

C46.    (Invited) Di Liang, Jusong Wang, Douglas C. Hall, “Nonselective oxidation of GaAs-based III-V compound semiconductor heterostructures for in-plane lasers,” invited paper submission, Optoelectronics 2007 at Photonics West: Novel In-Plane Semiconductor Lasers VI (San Jose, California, January 20-25, 2007).

C45.    Di Liang, Jason M. Kulick and Douglas C. Hall, “High-Efficiency Oxide-Confined Ridge Waveguide Laser with Nearly Symmetric Output Beam,” LEOS 2006: The 19th Annual Lasers and Electro Optics Society Meeting, submitted (Montreal, Quebec -Canada, October 29-November 2, 2006).

C44.    Y. Cao, J. Zhang, T. H. Kosel, D. C. Hall, and P. Fay, “Microwave-Frequency InAlP-oxide/GaAs MOSFETs,” 2006 IEEE Compound Semiconductor IC Symposium, paper C.2 (San Antonio, Texas, November 12-15, 2006).

C43.    Di Liang, Douglas C. Hall, Juno Yu-Ting Huang, Jeng-Ya Yeh, and Luke J. Mawst “High-Index-Contrast Oxide-Confined GaAsP/InGaAsN Multi-Quantum-Well Ridge Waveguide Lasers,” IEEE International Semiconductor Laser Conference, paper ThC5 (Kohala Coast, Hawaii, September 17-21, 2006).

C42.    Jusong Wang, Di Liang and Douglas C. Hall, “High-Performance Small-Radius Half-Racetrack-Ring-Resonator InAlGaAs Quantum Well Laser Diodes Fabricated via Non-Selective Wet Oxidation,” IEEE International Semiconductor Laser Conference, poster paper P5 (Kohala Coast, Hawaii, September 17-21, 2006).

C41.    J. Zhang, Y. Cao, T.H. Kosel, R.E Cook, and D.C. Hall, “A TEM Study of Wet Oxidation of InAlP on GaAs, Microscopy & Microanalysis 2006, Annual Meeting of the Microscopy Society of America and the Microbeam Analysis Society (Chicago, Illinois, July 30-August 3, 2006).

C40.    Ying Cao, Jing Zhang, Thomas H. Kosel, Xuebing Zhang, Russell D. Dupuis, Patrick Fay, and Douglas C. Hall, “Growth of Thin InAlP Native Oxides for GaAs Metal-Oxide-Semiconductor Devices,” TMS 2006 48th Electronic Materials Conference, Late News Paper 05 (State College, PA, June 28-30, 2006). Abstract

C39.    Jusong Wang, Di Liang and Douglas C. Hall, “Low-Loss High-Index-Contrast AlGaAs/GaAs S-Bend Waveguide Lasers,” SPIE Great Lakes Photonics Symposium, Conference on Emerging Photonics Technologies, paper GL106-20 (Dayton, Ohio, June 12-16, 2006).

C38.    Di Liang, Jusong Wang and Douglas C. Hall, “A Novel self-aligned process to fabricate high-index-contrast ridge waveguide lasers,” SPIE Great Lakes Photonics Symposium, Conference on Emerging Photonics Technologies, paper GL106-15 (Dayton, Ohio, June 12-16, 2006).

C37.    Dana C. Wheeler and Douglas C. Hall, “Optical Interference Logic in Silicon-on-Insulator Waveguides,” presented at the Optoelectronics 2006 Symposium at Photonics West, paper 6130-16 (San Jose, California, January 21-26, 2006); published in Proceedings of SPIE – The International Society for Optical Engineering, vol. 6130 – Advanced Optical and Quantum Memories and Computing III, edited by Hans J. Coufal, Zameer U. Hasan, and Alan E. Craig, article 61300G (8 pages) (February 2006).

C36.    Di Liang, Jusong Wang, Douglas C. Hall, Gregory M. Peake and Quesnell Hartmann, “High-Index-Contrast Ridge Waveguide Lasers Fabricated Via Oxygen-Enhanced Wet Thermal Oxidation,” presented at the Optoelectronics 2006 Symposium at Photonics West, paper 6133-40 (San Jose, California, January 21-26, 2006); published in Proceedings of SPIE – The International Society for Optical Engineering, vol. 6133 – Novel In-Plane Semiconductor Lasers V, edited by Carmen Mermelstein and David P. Bour, article 613312 (12 pages) (February 2006).

C35.    (Invited) Mingjun Huang and Douglas C. Hall “Er-doped In_0.5Al_0.5P native oxides on GaAs: photoluminescence characterization and annealing optimization,” presented at the Optoelectronics 2006 Symposium at Photonics West, paper 6116-10 (San Jose, California, January 21-26, 2006); published in Proceedings of SPIE – The International Society for Optical Engineering, vol. 6116 – Optical Components and Materials III, edited by Michel J. Digonnet and Shibin Jiang, article 61160A (8 pages) (February 2006).

C34.    Di Liang, Jusong Wang and Douglas C. Hall “Oxide-Confined High Index Contrast Ridge Waveguide Curved Resonator Laser Diodes,” LEOS 2005: The 18^th Annual Lasers and Electro Optics Society Meeting, paper ThZ 3 (Sydney, Australia,  October 23-27, 2005).

C33.    Mingjun Huang and Douglas C. Hall “Er-doped Wet Thermal Oxides of InAlP on GaAs for Optoelectronics Integration,” LEOS 2005: The 18^th Annual Lasers and Electro Optics Society Meeting, paper ThH 4 (Sydney, Australia,  October 23-27, 2005).

C32.    Di Liang, Douglas C. Hall and Gregory M. Peake “Oxidation Smoothing of Sidewall Roughness in AlGaAs Heterostructure Waveguides,”  LEOS 2005: The 18^th Annual Lasers and Electro Optics Society Meeting, paper TuY 4 (Sydney, Australia,  October 23-27, 2005).

C31. M. Huang and D. C. Hall “Elimination of ErAs luminescence-quenching complexes from Er-doped AlGaAs native oxides,” 47^th Electronic Materials Conference, paper KK1 (Santa Barbara, California, June 22-24, 2005). Abstract

C30. X. Li, Y. Cao, D. C. Hall, P. Fay, X. Zhang, and R. D. Dupuis, “InAlP Native Oxide/GaAs MOS Heterostructure Interface State Density Measured by Impedance Spectroscopy,” 46^th Electronic Materials Conference, paper GG4 (Notre Dame, Indiana, June 23-25, 2004). Abstract

C29. Y. Cao, J. Zhang, X. Li, T. H. Kosel, P. Fay, D. C. Hall, R. E. Cook, X. Zhang, and R. D. Dupuis, “Electrical Properties and Microstructure of InAlP Native Oxides for MOS Applications,” 46^th Electronic Materials Conference, paper GG3 (Notre Dame, Indiana, June 23-25, 2004). Abstract

C28. T. H. Kosel, D. C. Hall, R. D. Dupuis, R. D. Heller and R. E. Cook, “CuPt-Type Ordering of MOCVD In_0.49Al_0.51P,” Proc. Microscopy and Microanalysis 2002, Microscopy Society of America (Quebec City, Canada, Aug. 4-8, 2002).

C27. Y. Luo and D. C. Hall, "Deep Oxidation of AlGaAs Heterostructures for Strongly-Confined Optical Waveguides," presented at the 2001 43rd Electronic Materials Conference (Notre Dame, Indiana, June 27-29, 2001).  Abstract

C26. P. J. Barrios, D. C. Hall, U. Chowdhury, R. D. Dupuis, J. B. Jasinski, Z. Liliental-Weber, T. H. Kosel, and G. L. Snider, "Properties of InAlP Native Oxides Supporting MOS Inversion-layer Behavior," presented at the 2001 43rd Electronic Materials Conference (Notre Dame, Indiana, June 27-29, 2001).  Abstract

C25. P. J. Barrios, D. C. Hall, G. L. Snider, T. H. Kosel, U. Chowdhury and R. D. Dupuis, “Electrical properties of InAlP native oxides for GaAs-based MOS applications,” presented at the 34^th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV) at the 199th Meeting of the Electrochemical Society (Washington, D.C., March 25-30, 2001); published in the Proceedings of the International Symposia: III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-Of -The-Art Program On Compound Semiconductors (SOTAPOCS XXXIV), F. Ren, D.N Buckley, S. N. G. Chu, and S. J. Pearton, eds., Pennington, N.J.: The Electrochemical Society Proceedings Volume 2001-1, pp. 258-264.

Copyright 2001 by The Electrochemical Society, Inc.

A reprint (pdf format) of this paper may be downloaded for personal use only. Any other use requires prior permission of the author and the Electrochemical Society. Download abstract 462 (pdf file) from ECS website.

C24. Seong-Kyun Cheong, Tomohiro Shibata, Maxim Boyanov, Debdutta Lahiri, Bruce A. Bunker, Douglas C. Hall, Gregory L. Snider and Pedro J. Barrios, "Reflectivity and Reflection-mode XAFS study of the wet-thermal native oxide/GaAs interface," presented at the 2001 March Meeting of American Physical Society, paper J11.010 (Seattle, Washington, March 12-16, 2001), published in the Bulletin of the Americal Physical Society, vol. 46, no. 1 (2001).

C23. Y. Luo, D. C. Hall, O. Blum, R. M. Sieg, and A. A. Allerman, "Fully-Oxidized AlGaAs Heterostructures as Broadband Passive Waveguides for Photonic Circuit Integration," paper ThD2 in LEOS 2000 Conference Proceedings: IEEE Lasers and Electro-Optics Society 13th Annual Meeting, vol. 2, pp. 708-709 (Institute of Electrical and Electronics Engineers, Rio Grande, Puerto Rico, November 13-16, 2000).

C22. Bruce A. Bunker, Seong-kyun Cheong, Tomohiro Shibata, Maxim Boyanov,  Debdutta Lahiri, Douglas C. Hall, Gregory L. Snider and Pedro J. Barrios, "Reflectivity and Reflection-mode XAFS study of Ill-V compound native oxide/GaAs Interface," 11th International Conference on X-ray Absorption Fine Structure (XAFS XI), paper B6-04 (Ako, Japan, July 27-31, 2000).

C21. Pedro J. Barrios, Seong-Kyun Cheong, Douglas C. Hall, Nathaniel C. Crain, Gregory L. Snider, Christine B. DeMelo, Tomohiro Shibata, Bruce A. Bunker, Uttiya Chowdhury, Russell D. Dupuis, Gary Kramer, and Nada El-Zein, "Residual As and the Electrical Characteristics of AlGaAs Native Oxides for MOS Applications," 42nd Electronic Materials Conference, paper F3 (Denver, Colorado, June 21-23, 2000).

C20. Yong Luo, Douglas C. Hall, Olga Blum, and Hong Hou, "Effects of Mixed Carrier Gas in Wet Thermal Oxidation of AlGaAs," 42nd Electronic Materials Conference, paper F2 (Denver, Colorado, June 21-23, 2000).

C19. Seong-kyun Cheong, Tomohiro Shibata, Maxim Boyanov, Debdutta Lahiri, Bruce  A. Bunker, Douglas C. Hall, and Gregory L. Snider, "X-ray reflectivity and reflection-mode XAFS study of III-V compound native oxide/GaAs interfaces," 2000 March Meeting of American Physical Society, paper I19.02 (Minneapolis, Minnesota, March 20-24, 2000).

C18. Y. Luo, D. C. Hall, L. Kou, O. Blum, and H. Hou, "Optical Properties of AlxGa1-xAs Heterostructure Native Oxide Planar Waveguides," LEOS ’99 Conference Proceedings: IEEE Lasers and Electro-Optics Society 12th Annual Meeting, vol. 1, pp. 311-312 (Institute of Electrical and Electronics Engineers, San Francisco, CA, November 8-11, 1999).

C17. Yong Luo, Douglas C. Hall, Olga Blum and Hong Hou, "Al_xGa_1-xAs Heterostructure Native Oxide Planar Waveguides" paper CTuK44 in CLEO '99: Conference on Lasers and Electro-Optics, 1999 (Baltimore, Maryland, May 23-28, 1999), OSA Technical Digest Series (Optical Society of America, Washington, D. C., 1999), pp. 139-140.

C16. Leigang Kou, Douglas C. Hall, Tong Zhang and Robert M. Kolbas, "Spectroscopy of Rare-Earth-Doped AlGaAs Native Oxides," American Physical Society 1999 Centennial Meeting, paper ZC32.11 (Atlanta, Georgia, March 20-26, 1999).

C15. Seong-Kyun Cheong, Tomohiro Shibata, Maxim Boyanov, Debdutta Lahiri, Bruce A. Bunker, Douglas C. Hall, Gregory L. Snider and Christine B. DeMelo, "Reflection Mode XAFS studies of III-V compound native oxide/GaAs Interfaces," American Physical Society 1999 Centennial Meeting, paper XC23.09 (Atlanta, Georgia, March 20-26, 1999).

C14. Yong Luo, Leigang Kou, Douglas C. Hall, Olga Blum and Hong Hou, "Oxidized AlGaAs Heterostructure Waveguides," American Physical Society 1999 Centennial Meeting, paper EC07.03 (Atlanta, Georgia, March 20-26, 1999).

C13. Douglas C. Hall, "Compound Semiconductor Native Oxide MOSFETs: Interface Studies," WOCSEMMAD ’99: Workshop on Compound Semiconductor Materials and Devices, invited participation (New Orleans, Louisiana, February 22-24, 1999).

C12. Y. Luo, L. Kou, H. Wu, D. C. Hall, O. Blum, and H. Hou, "Prism Coupling Measurements of Al_xGa_1-xAs Native Oxides," LEOS ’98 Conference Proceedings: IEEE Lasers and Electro-Optics Society 11th Annual Meeting, vol. 2, pp. 240-241 (Institute of Electrical and Electronics Engineers, Orlando, Florida, December 1-4, 1998).

C11. L. Kou, D. C. Hall, J. F. Muth, T. Zhang, and R. M. Kolbas, "Photoluminescence of Dry-Oxidized Er³⁺-doped Al_xGa_1-xAs," LEOS ’98 Conference Proceedings: IEEE Lasers and Electro-Optics Society 11th Annual Meeting, vol. 2, pp. 244-245 (Institute of Electrical and Electronics Engineers, Orlando, Florida, December 1-4, 1998).

C10. L. Kou and D. C. Hall, "Photoluminescence of Er-doped AlGaAs native oxides," 40th Electronic Materials Conference, paper BB5 (Charlottesville, Virginia, June 24-26, 1998).

C9. D. C. Hall, L. Kou, P. D. Wang, H. Wu, J. F. Muth, T. Zhang, and R. M. Kolbas, "Photoluminescence of Er³⁺-doped Al_xGa_1-xAs Native Oxides," LEOS ’97 Conference Proceedings: IEEE Lasers and Electro-Optics Society 10th Annual Meeting, vol. 2, pp. 105-106 (Institute of Electrical and Electronics Engineers, San Francisco, California, November 10-13, 1997).

C8. H. Wu, D. C. Hall, O. Blum, H. Hou, B. E. Hammons, "Prism coupling measurements of the refractive index of Al_xGa_1-xAs native oxides," presented at the Workshop on Native Oxides of Compound Semiconductors, San Antonio, Texas, February 19-20, 1997.