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A. C. Seabaugh, Q. Liu, S. Sutar, Q. Zhang, W. Zhao, J. Zhao, Y. Yan, B. Wu, S. Kabeer, D. Wheeler, Z. Racz, and P. Fay, “High speed, low power, and mixed signal tunneling device technology,” Extended abstracts of the Int. COE Workshop on Nano Processes and Devices, and their Applications, pp. 37-38 (2005).
L.-E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhang, W. Seifert, T. Kosel, and A. Seabaugh, “A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra shallow junction formation,” IEEE Trans. Nanotechnology 4, 594-598 (2005).
Design approach using tunnel diodes for lowering power in differential amplifiers, Q. Liu and A. Seabaugh, IEEE Trans. Circ. Sys. II: Express Briefs, 572-575 (2005).
Opposing Dependence of the Electron and Hole Gate Currents in SOI MOSFETs Under Uniaxial Strain, Wei Zhao, Alan Seabaugh, Vance Adams, Dejan Jovanovic, and BrianWinstead, IEEE Electron Device Letters, Vol. 26, No. 6, pp.410-412, June 2005
Tunnel diode/transistor differential comparator, Q. Liu, S. Sutar, and A. Seabaugh, in Selected Topics in Electronics and Systems – Vol 35 High Performance Devices, Proc. of the 2004 IEEE Lester Eastman Conference on High Performance Devices, ed. by R. E. Leoni III, (World Scientific 2005), pp. 640-645.
2004 Device Research Conference,(jpg) (full resolution file, zipped) June 20, 2004, University of Notre Dame
Unified AC Model for the Resonant Tunneling Diode(pdf), Qingmin Liu, Alan Seabaugh, Prem Chahal, and Frank J. Morris, IEEE Transactions on Electron Devices, Vol. 51, No. 5, pp. 653-657, May 2004
Partially Depleted SOI MOSFETs Under Uniaxial Tensile Strain,(pdf), Wei Zhao, Jianli He, Rona E. Belford, Member, IEEE, Lars-Erik Wernersson, and Alan Seabaugh, Fellow, IEEE, IEEE Transactions on Electron Devices, Vol. 51, No. 3, pp. 317-323, March 2004
Tunnel Diode/Transistor Differential Comparator
Qingmin Liu and Alan Seabaugh, 2004 Lester Eastman Conference on High Performance Devices, June 2004
Nanofabrication using nanotranslated stencil masks and lift off (pdf), Zoltan Racz, Jianli He, Srivatsan Srinivasan, Wei Zhao, and Alan Seabaugh, Keping Han, Paul Ruchhoeft, and Jack Wolfe, J. Vac. Sci. Technol. B 22, 74-76 (2004)
SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion(pdf), L.-E. Wernersson, S. Kabeer, V. Zela, E. Lind, J. Zhang, W. Seifert, T. Kosel and A. Seabaugh, Electronic Letters 8th Vol. 40, No. 1, pp. 83-85, January 2004
Silicon Tunnel Diodes Formed by Proximity Rapid Thermal Diffusion(pdf), Jinli Wang, Dane Wheeler, Yan Yan, Jialin Zhao, Scott Howard, and Alan Seabaugh, IEEE Electron Device Letters, Vol. 24, No. 2, pp. 93-95, February 2003
Silicon Tunnel Diodes Formed by Proximity Rapid Thermal Diffusion (pdf), J. Wang, D. Wheeler, Y. Yan, J. Zhao, S. Howard, and A. Seabaugh, 2002 Lester Eastman Conference on High Performances Devices.
Performance Augmented CMOS Using Back-End Uniaxial Strain (pdf), R. E. Belford, W. Zhao, Q. Liu, and A. Seabaugh, 60th Device Research Conference Digest (2002).
Notre Dame Promotional Video High Resolution || Low Resolution
Irradiation effects in InGaAs/InAlAs high electron mobility transistors (pdf), E.M. Jackson, B.D. Weaver, S. Shojah-Ardalan, R. Wilkins, A. Seabaugh, and B. Brar, Appl. Phys. Lett. 79, 2279 (2001).
Silicon-based tunnel diodes and integrated circuits (pdf), A. Seabaugh, Z. Hu, Q. Liu, D. Rink, and J. Wang, 4th International Workshop on Quantum Functional Devices, pp 5-8 (2000).
MeV ion-induced suppression of resonance current in InP-based resonant tunneling diodes (pdf), B. D. Weaver, E. M. Jackson, A. C. Seabaugh, and P. van der Wagt, Appl. Phys. Let. 76, 2562 (2000).
Current–Voltage Characteristics of High Current Density Silicon Esaki Diodes Grown by Molecular Beam Epitaxy and the Influence of Thermal Annealing (pdf), M. W. Dashiell, R. T. Troeger, S. L. Rommel, T. N. Adam, P. R. Berger, C. Guedj, J. Kolodzey, A. C. Seabaugh, and R. Lake, IEEE Transactions On Electron Devices, Vol. 47, No. 9, (2000).
Promise of Tunnel Diode Integrated Circuits abstract (pdf), presentation (pdf), given 9 December 1999 at the Si Tunnel Diode and CMOS/HBT Integration Workshop, Naval Research Laboratory.
Resonant tunneling technology for mixed signal and digital circuits in the multi-GHz domain (pdf), T. P. E. Broekaert, B. Brar, A. C. Seabaugh, and G. Frazier, Proc. Ninth Great Lakes Symp. on VLSI, (1999).
Resonant-tunneling mixed-signal circuit technology (pdf), A. Seabaugh, B. Brar, T. Broekaert, F. Morris, P. van der Wagt, and G. Frazier, Solid-State Electronics 43, 1355-1365, (1999).
Epitaxially Grown Si Resonant Interband Tunnel Diodes Exhibiting High Current Densities (pdf), S. L. Rommel, T. E. Dillon, P. R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, and A. C. Seabaugh, IEEE Electron Device Letters, Vol. 20, No. 7, (1999).
Transistors and Tunnel Diodes For Analog/Mixed-Signal Circuits and Embedded Memory (pdf), A. Seabaugh, X. Deng, T. Blake, B. Brar, T. Broekaert, R. Lake, F. Morris, and G. Frazier, IEEE Int. Symp. Comp. Semicond. (Inst. Phys. Publ.) pp. 429-432 (1998).
A. Seabaugh and R. Lake, "Tunnel Diodes," Encyclop. Appl. Phys. 22 (Am. Inst. Phys. VCH Pub. NY 1998) pp. 335-359.
Resonant tunneling in disordered systems such as Si02/Si/Si02 (pdf), R. Lake, B. Brar, G. D. Wilk, A. C. Seabaugh, and G. Klimeck, 1997 IEEE Int. Symp. Comp. Semicond. (Inst. Phys. Publ.) pp. 617-620 (1998).
A Monolithic 4-Bit 2-Gsps Resonant Tunneling Analog-to-Digital Converter (pdf) , T. P. E. Broekaert, B. Brar, P. van der Wagt, A. C. Seabaugh, F. J. Morris, T. S. Moise, E. A. Beam, and G. A. Frazier, IEEE Journal of Solid-state Circuits, Vol. 33, No. 9, (1998).